公开(公告)号：US09318346B2

公开(公告)日：2016-04-19

申请号：US14468688

申请日：2014-08-26

Applicant: HITACHI CHEMICAL COMPANY., LTD.

Inventor： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

Abstract translation: 含有介质的CMP抛光液和分散在介质中的磨粒的二氧化硅颗粒。 二氧化硅粒子的硅烷醇基密度为5.0nm / nm 2以下，当通过扫描电子显微镜观察得到的图像中任意选择20个二氧化硅粒子时的双轴平均一次粒径为25〜55nm。 二氧化硅粒子的结合度为1.1以上。 CMP抛光液具有高阻隔膜抛光速度，良好的磨料颗粒分散稳定性和高层间电介质抛光速度。 CMP抛光液可以提供具有优异的微细加工，薄膜形成，尺寸精度，电性能和高可靠性的低成本的半导体衬底等的制造方法。

公开(公告)号：US20140363973A1

公开(公告)日：2014-12-11

申请号：US14468688

申请日：2014-08-26

Applicant: HITACHI CHEMICAL COMPANY., LTD.

Inventor： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

IPC: H01L21/321 ,  C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

Abstract translation: 含有介质的CMP抛光液和分散在介质中的磨粒的二氧化硅颗粒。 二氧化硅粒子的硅烷醇基密度为5.0nm / nm 2以下，当通过扫描电子显微镜观察得到的图像中任意选择20个二氧化硅粒子时的双轴平均一次粒径为25〜55nm。 二氧化硅粒子的结合度为1.1以上。 CMP抛光液具有高阻隔膜抛光速度，良好的磨料颗粒分散稳定性和高层间电介质抛光速度。 CMP抛光液可以提供具有优异的微细加工，薄膜形成，尺寸精度，电性能和高可靠性的低成本的半导体衬底等的制造方法。