公开(公告)号：US20220359150A1

公开(公告)日：2022-11-10

申请号：US17623363

申请日：2019-07-08

Applicant: Hitachi High-Tech Corporation

Inventor： Momoyo Enyama ,  Makoto Sakakibara ,  Hajime Kawano ,  Hiroya Ohta

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J37/26 ,  H01J37/153

Abstract: The invention provides a charged particle beam device capable of reducing a positional shift between secondary beams generated in a beam separator. The charged particle beam device includes a charged particle beam source configured to irradiate a sample with a plurality of primary beams, a plurality of detectors configured to detect secondary beams emitted from the sample in correspondence to the primary beams, and a beam separator configured to deflect the secondary beams in a direction different from that of the primary beams. The charged particle beam device further includes a deflector provided between the beam separator and the detector to correct a positional shift between the secondary beams generated in the beam separator.

公开(公告)号：US12205790B2

公开(公告)日：2025-01-21

申请号：US17623363

申请日：2019-07-08

Applicant: Hitachi High-Tech Corporation

Inventor： Momoyo Enyama ,  Makoto Sakakibara ,  Hajime Kawano ,  Hiroya Ohta

IPC: H01J37/147 ,  H01J37/153 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

Abstract: The invention provides a charged particle beam device capable of reducing a positional shift between secondary beams generated in a beam separator. The charged particle beam device includes a charged particle beam source configured to irradiate a sample with a plurality of primary beams, a plurality of detectors configured to detect secondary beams emitted from the sample in correspondence to the primary beams, and a beam separator configured to deflect the secondary beams in a direction different from that of the primary beams. The charged particle beam device further includes a deflector provided between the beam separator and the detector to correct a positional shift between the secondary beams generated in the beam separator.

公开(公告)号：US12174551B2

公开(公告)日：2024-12-24

申请号：US17732969

申请日：2022-04-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma Yamamoto ,  Hiroya Ohta ,  Kenji Tanimoto ,  Yusuke Abe ,  Tomohiro Tamori ,  Masaaki Nojiri

IPC: G03F7/00 ,  G01B15/04 ,  G01N23/225 ,  G03F7/20

Abstract: A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US10816332B2

公开(公告)日：2020-10-27

申请号：US16086063

申请日：2016-04-13

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroya Ohta ,  Kenji Tanimoto ,  Tomohiro Tamori ,  Takuma Yamamoto

IPC: G01B15/00 ,  H01J37/244 ,  H01J37/20 ,  H01J37/147

Abstract: The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

公开(公告)号：US11869745B2

公开(公告)日：2024-01-09

申请号：US17435479

申请日：2019-03-27

Applicant: Hitachi High-Tech Corporation

Inventor： Minami Shouji ,  Natsuki Tsuno ,  Hiroya Ohta ,  Daisuke Bizen

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/224 ,  H01J37/226 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/2448 ,  H01J2237/2817

Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).

公开(公告)号：US11435178B2

公开(公告)日：2022-09-06

申请号：US16638634

申请日：2017-08-25

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yasunari Sohda ,  Yoshinori Nakayama ,  Kaori Bizen ,  Hiroya Ohta ,  Yusuke Abe

IPC: G01B15/00 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

Abstract: To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substrate 201 whose upper surface is a {110} plane, a first recess structure 202 opening in the upper surface and extending in a first direction, and a second recess structure 203 opening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

公开(公告)号：US20220260930A1

公开(公告)日：2022-08-18

申请号：US17732969

申请日：2022-04-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takuma Yamamoto ,  Hiroya Ohta ,  Kenji Tanimoto ,  Yusuke Abe ,  Tomohiro Tamori ,  Masaaki Nojiri

IPC: G03F7/20 ,  G01B15/04 ,  G01N23/225

Abstract: A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20220139667A1

公开(公告)日：2022-05-05

申请号：US17435479

申请日：2019-03-27

Applicant: Hitachi High-Tech Corporation

Inventor： Minami Shouji ,  Natsuki Tsuno ,  Hiroya Ohta ,  Daisuke Bizen

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244 ,  H01J37/26

Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).