公开(公告)号：US20160177449A1

公开(公告)日：2016-06-23

申请号：US14973592

申请日：2015-12-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: C23C16/513

CPC classification number: H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Abstract translation: 使用等离子体处理设置在处理室中的晶片的等离子体装置包括设置在光源和另一窗口之间的一个窗口，另一个窗口，光接收单元，光源和光分路单元， 通过光源到朝向处理室的光路和沿另一方向的光路，并且从另一窗口反射处理室中的光;以及检测单元，其检测从等离子体发射的光并由 光接收单元使用一个分支光和其他分支和反射光。 该装置根据基于检测结果调整的处理条件处理晶片。

公开(公告)号：US20180269042A1

公开(公告)日：2018-09-20

申请号：US15982827

申请日：2018-05-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: H01J37/32

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.