公开(公告)号：US20190198299A1

公开(公告)日：2019-06-27

申请号：US16110081

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tomoyuki WATANABE ,  Yutaka KOUZUMA ,  Takumi TANDOU ,  Kenetsu YOKOGAWA ,  Hiroshi ITO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.