公开(公告)号：US20170025255A1

公开(公告)日：2017-01-26

申请号：US15203851

申请日：2016-07-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Kenetsu YOKOGAWA

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32963

Abstract: A sample stage includes a metallic electrode block to which high-frequency power is supplied from a high-frequency power supply, a dielectric heat generation layer which is disposed on a top surface of the electrode block and in which a film-like heater receiving power and generating heat is disposed, a conductor layer which is disposed to cover the heat generation layer, a ring-like conductive layer which is disposed to surround the heat generation layer at an outer circumferential side of the heat generation layer and contacts the conductor layer and the electrode block, and an electrostatic adsorption layer which is disposed to cover the conductor layer and electrostatically adsorbs a sample. The conductor layer and the ring-like conductive layer have dimensions more than a skin depth of a current of the high-frequency power and the electrode block is maintained at a predetermined potential during processing of the sample.

Abstract translation: 样品台包括从高频电源供给高频电力的金属电极块，布置在电极块顶表面上的电介质发热层，其中膜状加热器接收功率 并且设置发热，设置成覆盖发热层的导体层，环状导电层，其设置成在发热层的外周侧包围发热层并与导体层接触， 电极块和静电吸附层，其设置成覆盖导体层并静电吸附样品。 导体层和环状导电层的尺寸大于高频电力的电流的趋肤深度，并且在样品处理期间电极块保持在预定电位。

公开(公告)号：US20190198299A1

公开(公告)日：2019-06-27

申请号：US16110081

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tomoyuki WATANABE ,  Yutaka KOUZUMA ,  Takumi TANDOU ,  Kenetsu YOKOGAWA ,  Hiroshi ITO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.

公开(公告)号：US20170025254A1

公开(公告)日：2017-01-26

申请号：US15216148

申请日：2016-07-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Takamasa ICHINO ,  Kenetsu YOKOGAWA ,  Yutaka OHMOTO

IPC: H01J37/32 ,  C23C16/50 ,  C23C14/48

CPC classification number: H01J37/32009 ,  H01J37/32715 ,  H01J37/32724

Abstract: A plasma processing device includes: a processing chamber which is disposed in a vacuum vessel and is compressed; a sample stage which is disposed in the processing chamber and on which a wafer of a process target is disposed and held; and a mechanism for forming plasma in the processing chamber on the sample stage, wherein the sample stage includes a block which is made of a dielectric and has a discoid shape, a jacket which is disposed below the block with a gap therebetween, is made of a metal, and has a discoid shape, a recessed portion which is disposed in a center portion of a top surface of the jacket and into which a cylindrical member disposed below a center portion of the block and made of a dielectric is inserted, and a cooling medium flow channel disposed in the jacket and through which a cooling medium circulates.

Abstract translation: 等离子体处理装置包括：处理室，其设置在真空容器中并被压缩; 设置在处理室中并且处理对象的晶片被放置并保持在其上的样本台; 以及用于在样品台上的处理室中形成等离子体的机构，其中样品台包括由电介质制成并具有圆盘状的块，在其间具有间隙的块下方设置的护套由 金属，并且具有圆盘状，凹部设置在所述护套的上表面的中心部分，并且插入设置在所述块的中心部分下方并由电介质构成的圆柱形构件，并且 冷却介质流动通道设置在外壳中，冷却介质通过该通道循环。

公开(公告)号：US20150031213A1

公开(公告)日：2015-01-29

申请号：US14514587

申请日：2014-10-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Go MIYA ,  Masaru IZAWA ,  Takumi TANDOU

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32724 ,  H01J37/32825 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67109

Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract translation: 提供了一种等离子体处理装置，其包括多个上游侧膨胀阀和连接到各个制冷剂入口的各个下游侧膨胀阀和各个制冷剂出口，以调节制冷剂的流量或压力 流入相应的制冷剂入口以及从各个制冷剂出口流出的制冷剂的流量或压力。 该方法包括调节上游侧膨胀阀的开口和下游侧膨胀阀的开口，使得在多个上游侧膨胀阀和多个上游侧膨胀阀之间的多个制冷剂通道中不会发生制冷剂的流量变化 的下游侧膨胀阀通过允许制冷剂在其中流动的制冷循环中的多个制冷剂通道。

公开(公告)号：US20170186587A1

公开(公告)日：2017-06-29

申请号：US15273812

申请日：2016-09-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tetsuo KAWANABE ,  Takumi TANDOU ,  Tsutomu TETSUKA ,  Naoki YASUI

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/67

CPC classification number: H01J37/32348 ,  C23C16/452 ,  C23C16/4585 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/68735

Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

公开(公告)号：US20160027621A1

公开(公告)日：2016-01-28

申请号：US14626948

申请日：2015-02-20

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Akitaka MAKINO ,  Hiromichi KAWASAKI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32192 ,  H01L21/6833

Abstract: A plasma processing apparatus includes: a vacuum vessel, a processing chamber disposed inside of the vacuum vessel, inside of which plasma is formed, a sample stage disposed below the processing chamber, on whose upper surface a sample that is a target processed by using the plasma is mounted, a sintered plate of dielectric material constituting a mounting surface of the sample stage on which the sample is mounted, abase material of metal bonded to the sintered plate below it with a bonding layer made of an adhesive agent intervening therebetween, and a cooling medium flow channel disposed inside of the base material, through which a cooling medium flows, in which a shearing force of the bonding layer generated in a portion on the peripheral side of the sample stage is made smaller than that generated in a portion on the center side.

Abstract translation: 等离子体处理装置包括：真空容器，设置在真空容器内部的处理室，其内部形成有等离子体;设置在处理室下方的样品台，其上表面是使用 构成等离子体的电介质材料的烧结板，构成安装有样品的样品台的安装面，利用介于其间的粘结剂形成的粘接层，将与其下方的烧结板接合的金属材料浸渍在其上， 冷却介质流动通道，其设置在所述基材的内部，冷却介质流过所述冷却介质流动通道，其中在所述样品台的周边侧的部分中产生的所述结合层的剪切力小于 中心侧。

公开(公告)号：US20150248994A1

公开(公告)日：2015-09-03

申请号：US14463685

申请日：2014-08-20

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Kohei SATO ,  Hiromichi KAWASAKI ,  Akitaka MAKINO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32678 ,  H01L21/6831

Abstract: A plasma processing apparatus, comprising a processing chamber within a vacuum chamber, and a sample stage arranged within the processing chamber with a sample to be processed placed on its top surface, wherein plasma is formed in the processing chamber to perform processing of the sample, wherein the sample stage is provided with an electrostatic chuck which is provided with film electrodes to which power for attraction of the sample is supplied, and upper and lower plate-like sintered bodies joined mutually with the electrodes interposed between them from above and below, and the lower sintered body has a dielectric constant higher than that of the upper sintered body.

Abstract translation: 一种等离子体处理装置，包括真空室内的处理室和布置在处理室内的待处理样品放置在其顶表面上的样品台，其中在处理室中形成等离子体以进行样品处理， 其中，所述样品台设置有静电卡盘，所述静电卡盘设置有供给所述样品的吸引力的膜电极，并且上下板状烧结体与从其上下插入的电极相互连接，以及 下部烧结体的介电常数高于上部烧结体的介电常数。

公开(公告)号：US20170278730A1

公开(公告)日：2017-09-28

申请号：US15469684

申请日：2017-03-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Kenetsu YOKOGAWA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32541 ,  H01J37/32192 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68742

Abstract: A plasma processing apparatus including a sample stage arranged in a processing chamber, a temperature regulator arranged in an interior of the sample stage, a film made of a dielectric that configures the upper surface of the sample stage, and including a film-like electrode therein, a protruding portion arranged on an upper surface of the film made of a dielectric on an outer periphery-side area, and arranged to surround a center-side area of the upper surface in a ring manner, a power source that supplies power for forming electrostatic force that absorbs a wafer arranged above the electrode in the film made of a dielectric, and a controller that regulates the power from the power source and the gas introduction between the wafer and the film to hold the wafer above the film in a noncontact manner.

公开(公告)号：US20140004706A1

公开(公告)日：2014-01-02

申请号：US13928645

申请日：2013-06-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Go MIYA ,  Masaru IZAWA ,  Takumi TANDOU

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01J37/32724 ,  H01J37/32825 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67109

Abstract: Provided is a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. Openings of the upstream-side expansion valves and openings of the downstream-side expansion valves are adjusted so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract translation: 提供了一种等离子体处理装置，其包括多个上游侧膨胀阀和连接到各个制冷剂入口和各个制冷剂出口的多个下游侧膨胀阀，以调节流入各个制冷剂的制冷剂的流量或压力 入口和从各个制冷剂出口流出的制冷剂的流量或压力。 调节上游侧膨胀阀的开口和下游侧膨胀阀的开口，使得在多个上游侧膨胀阀与多个下游侧膨胀阀之间的多个制冷剂流路中不会发生制冷剂的流量变化 通过允许制冷剂在其中流动的制冷循环中的多个制冷剂通道的侧面膨胀阀。