公开(公告)号：US20190237302A1

公开(公告)日：2019-08-01

申请号：US16378783

申请日：2019-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20170229290A1

公开(公告)日：2017-08-10

申请号：US15072392

申请日：2016-03-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20210358760A1

公开(公告)日：2021-11-18

申请号：US16495515

申请日：2019-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Sumiko FUJISAKI ,  Yoshihide YAMAGUCHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

公开(公告)号：US20200006079A1

公开(公告)日：2020-01-02

申请号：US16286262

申请日：2019-02-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Kazumasa OOKUMA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

公开(公告)号：US20190198299A1

公开(公告)日：2019-06-27

申请号：US16110081

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tomoyuki WATANABE ,  Yutaka KOUZUMA ,  Takumi TANDOU ,  Kenetsu YOKOGAWA ,  Hiroshi ITO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.

公开(公告)号：US20210366721A1

公开(公告)日：2021-11-25

申请号：US16495366

申请日：2018-11-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20210231571A1

公开(公告)日：2021-07-29

申请号：US16646487

申请日：2019-02-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshifumi OGAWA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: G01N21/73 ,  H01J37/32 ,  H05H1/24 ,  H01L21/67 ,  C23C16/52

Abstract: Provided is a detecting device of gas components that includes a gas component detecting unit for detection of a light emission of plasma that is formed by re-excitation downstream of an arrangement position of an object to be processed. The gas component detecting unit includes an introduced gas supply portion that supplies an introduced gas, a nozzle portion that is provided with a hole through which the introduced gas that is supplied from the introduced gas supply portion passes through and an opening through which a part of a gas to be analyzed flowing through an exhaust pipe portion is introduced into an inside of the hole, the opening being provided in an intermediate portion of the hole, a discharge electrode portion that generates plasma inside the nozzle portion by causing the gas to be analyzed that is introduced from the opening into an inside of the nozzle portion and the introduced gas that is supplied into the inside of the hole to discharge, and a light emission detecting unit that detects a light emission of the plasma generated inside the nozzle portion by the discharge electrode portion.

公开(公告)号：US20180090345A1

公开(公告)日：2018-03-29

申请号：US15468259

申请日：2017-03-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Yutaka KOUZUMA ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kenetsu YOKOGAWA ,  Tomoyuki WATANABE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/3211 ,  H01J37/32724 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/67115

Abstract: A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.

公开(公告)号：US20180076051A1

公开(公告)日：2018-03-15

申请号：US15698823

申请日：2017-09-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori SHINODA ,  Satoshi SAKAI ,  Masaru IZAWA ,  Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Yutaka KOUZUMA ,  Kenji ISHIKAWA ,  Masaru HORI

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32136 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.