公开(公告)号：US10724856B2

公开(公告)日：2020-07-28

申请号：US16330003

申请日：2016-09-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Atsuko Yamaguchi ,  Kazuhisa Hasumi ,  Hitoshi Namai

IPC: G06T7/00 ,  G01B15/04 ,  G01N23/2251 ,  H01J37/28 ,  H01L21/66 ,  H01L27/088

Abstract: To provide an image analysis apparatus capable of easily extracting an edge of an upper layer pattern formed intersecting with a lower layer pattern so as not to be affected by the lower layer pattern, the image analysis apparatus includes a calculation unit that calculates an analysis range including a region where the lower layer pattern intersects with the upper layer pattern and a region where the lower pattern is not formed, a calculation unit that averages a plurality of signal profiles, a calculation unit that calculates a maximum value and a minimum value of a signal intensity, a calculation unit that calculates a threshold level difference using the maximum value and the minimum value, and a calculation unit that calculates the edge of the upper layer pattern on the signal profile.

公开(公告)号：US09831062B2

公开(公告)日：2017-11-28

申请号：US14760322

申请日：2014-01-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto Suzuki ,  Satoru Yamaguchi ,  Kei Sakai ,  Miki Isawa ,  Satoshi Takada ,  Kazuhisa Hasumi ,  Masami Ikota

IPC: H01J37/30 ,  H01J37/28

CPC classification number: H01J37/30 ,  H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/3175

Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.

公开(公告)号：US10854420B2

公开(公告)日：2020-12-01

申请号：US16310830

申请日：2016-07-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miki Isawa ,  Ayumi Doi ,  Kazuhisa Hasumi

IPC: H01J37/28 ,  H01J37/22 ,  G01N23/2251 ,  G06T7/00

Abstract: A pattern evaluation device has measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, which can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for the semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on the semiconductor wafer is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the semiconductor wafer, wherein the device conditions for evaluating the semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a part of a pattern of the semiconductor wafer, and the converted device conditions are used to evaluate the replica.

公开(公告)号：US10295339B2

公开(公告)日：2019-05-21

申请号：US15215756

申请日：2016-07-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazuhisa Hasumi ,  Masami Ikota

IPC: G06K9/00 ,  G01B15/06 ,  G01B15/04 ,  H01J37/26 ,  H01L21/66

Abstract: A pattern measurement method and measurement apparatus are provided that appropriately evaluate the deformation of a pattern occurring due to a micro loading effect. In order to achieve the above-mentioned object, there are provided pattern measurement method and apparatus that measure a dimension of a pattern formed on a sample. In the pattern measurement method and apparatus, distances between a reference pattern and a plurality of adjacent patterns adjacent to the reference pattern or inner diameters of the reference pattern in a plurality of directions are measured, and the measurement results of the plurality of distances between the reference pattern and the adjacent patterns or the measurement results of the inner diameters of the reference pattern in the plurality of directions are classified according to distances between the reference pattern and the adjacent patterns or directions of the patterns adjacent to the reference pattern.