公开(公告)号：US20140277626A1

公开(公告)日：2014-09-18

申请号：US14289773

申请日：2014-05-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Shoji IKUHARA ,  Toshihiro MORISAWA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G05B13/048 ,  G05B2219/31357 ,  H01J37/32935

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.

Abstract translation: 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制循环中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。