公开(公告)号：US20160203957A1

公开(公告)日：2016-07-14

申请号：US15074204

申请日：2016-03-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G01J3/28 ,  G01J3/443 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67253

Abstract: A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

Abstract translation: 通过指定波长和时间间隔的组合，在较早的阶段实现了稳定的蚀刻工艺，其在短时间段内呈现蚀刻处理结果的最小预测误差。 为此，波长和时间间隔的组合是从样品蚀刻时产生的等离子体发射的波长带产生的，对于波长和时间间隔的每个组合，波长组合计算蚀刻处理结果预测的预测误差 基于所计算的预测误差来指定预测误差，通过改变相对于指定波长组合的时间间隔来进一步计算预测误差，并且将表示计算出的预测误差的最小值的波长和时间间隔的组合选择为 波长和用于预测蚀刻处理过程的时间间隔。

公开(公告)号：US20160155611A1

公开(公告)日：2016-06-02

申请号：US14834389

申请日：2015-08-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Yuji NAGATANI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/52 ,  C23C16/50 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935

Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

Abstract translation: 应用了诸如APC的过程控制的等离子体处理装置包括：对样品进行等离子体处理的处理室; 以及等离子体处理控制装置，其进行控制以优化等离子体处理的状态，其基于从第二批次的等离子体处理的时间等待时间来恢复处理室内处于等离子体处理的状态，等待处理 在第一批之前很快就完成了第一批的等离子处理开始的时间，第二批的等离子体处理的内容。

公开(公告)号：US20140262029A1

公开(公告)日：2014-09-18

申请号：US14023831

申请日：2013-09-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Kenji TAMAKI

IPC: H01L21/66 ,  H01L21/67 ,  G01J3/443

CPC classification number: G01J3/443 ,  G01N21/68 ,  H01J37/32972 ,  H01J2237/334

Abstract: An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.

Abstract translation: 蚀刻装置从蚀刻处理期间的由发光分光器测定的发光的信息的信息中计算出特定元素应发光的多个波长中的每一个附近的发光强度，如果确定计算出的 存储在存储单元中的发光强度信息和发光强度信息相似，以与元件相关联的波长提取对应于计算的发射强度的波长。

公开(公告)号：US20180025894A1

公开(公告)日：2018-01-25

申请号：US15445203

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  G01J3/28

Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

公开(公告)号：US20150083328A1

公开(公告)日：2015-03-26

申请号：US14303636

申请日：2014-06-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01L21/66 ,  G01J3/443 ,  H01L21/67

CPC classification number: H01J37/3299 ,  B81C2201/0132 ,  H01J37/32926 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31138 ,  H01L21/67069

Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

Abstract translation: 提供了一种分析从使用等离子体微加工晶片的蚀刻装置获得的数据的方法。 该方法包括以下步骤：获取指示多个不同波长和时间的发光强度的等离子体发光数据，等离子体发光数据在多个不同的蚀刻处理条件下测量，并且在 蚀刻处理的时间，评估蚀刻处理条件的变化与多个不同波长和时间相对于等离子体发光数据的波长和时间的发光强度的变化之间的关系，以及识别 基于评估结果的波长和等离子体发光数据的时间，用于调整蚀刻处理条件的波长和时间。

公开(公告)号：US20140277626A1

公开(公告)日：2014-09-18

申请号：US14289773

申请日：2014-05-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Shoji IKUHARA ,  Toshihiro MORISAWA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G05B13/048 ,  G05B2219/31357 ,  H01J37/32935

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.

Abstract translation: 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制循环中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。

公开(公告)号：US20190170653A1

公开(公告)日：2019-06-06

申请号：US16272354

申请日：2019-02-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: G01N21/68 ,  H01J37/32

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

公开(公告)号：US20180068909A1

公开(公告)日：2018-03-08

申请号：US15437026

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Yuji NAGATANI ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.

公开(公告)号：US20160020123A1

公开(公告)日：2016-01-21

申请号：US14625855

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01L21/67 ,  H01J37/32 ,  G01J3/443

CPC classification number: H01J37/32926 ,  G01J3/28 ,  G01J3/443 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67253

Abstract: A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

公开(公告)号：US20190051502A1

公开(公告)日：2019-02-14

申请号：US15892041

申请日：2018-02-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Shota UMEDA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.