公开(公告)号：US20160211186A1

公开(公告)日：2016-07-21

申请号：US14851744

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32963

Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.

Abstract translation: 提供一种能够进行稳定的端点检测的半导体晶片的处理装置和处理方法。 在等离子体处理装置或方法中，其中包括预先形成在安装在位于真空容器内的处理室内的样品台上的晶片的表面上的多个膜层的膜结构的处理目标膜层，通过 使用与处理室形成的等离子体，使用由多个不同时间间隔内的光的接收结果构成的数据来检测多个波长的光的强度，该光接收器从内部接收多个波长的光 的处理室。

公开(公告)号：US20160284610A1

公开(公告)日：2016-09-29

申请号：US14852189

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

Abstract translation: 一种处理层结构的等离子体处理方法，其特征在于，预先形成在设置在真空容器内的处理室中的晶片的上表面上并且具有被处理层和底层涂层的处理层结构， 通过将实际图案数据与实际图案数据进行比较的结果来计算在待处理的层处理的层的蚀刻量的步骤，该检测图案数据通过组合通过处理该层获得的干涉光的参数波长的两种强度图案而获得 具有不同厚度的三层或多层底涂层的结构以及处理任何晶片之前要处理的层和具有作为在任何晶片上的层结构的处理期间获得的干涉光的波长的参数的面积图案 。

公开(公告)号：US20170358504A1

公开(公告)日：2017-12-14

申请号：US15673151

申请日：2017-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

公开(公告)号：US20140277626A1

公开(公告)日：2014-09-18

申请号：US14289773

申请日：2014-05-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Shoji IKUHARA ,  Toshihiro MORISAWA

IPC: H01J37/32

CPC classification number: H01J37/32926 ,  G05B13/048 ,  G05B2219/31357 ,  H01J37/32935

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.

Abstract translation: 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制循环中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。

公开(公告)号：US20200294777A1

公开(公告)日：2020-09-17

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kosa HIROTA ,  Masahiro SUMIYA ,  Koichi NAKAUNE ,  Nanako TAMARI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US20170372878A1

公开(公告)日：2017-12-28

申请号：US15677260

申请日：2017-08-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito TOGAMI ,  Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32458 ,  H01J37/32908 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/0266 ,  H01J2237/2445 ,  H01J2237/3341

Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

公开(公告)号：US20170178874A1

公开(公告)日：2017-06-22

申请号：US15277272

申请日：2016-09-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yohei KAWAGUCHI ,  Tatehito USUI ,  Masahito TOGAMI ,  Satomi INOUE ,  Shigeru NAKAMOTO

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  G01N21/84 ,  G01B11/06

CPC classification number: H01J37/32972 ,  G01B11/0616 ,  G01N21/84 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32935 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.

公开(公告)号：US20160351405A1

公开(公告)日：2016-12-01

申请号：US15060822

申请日：2016-03-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Kousuke FUKUCHI ,  Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3081 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.

Abstract translation: 等离子体处理方法包括在处理室中形成等离子体; 并对预先设置在包括多个膜层的晶片的上表面上的膜结构进行处理的膜进行蚀刻。 膜结构包括：下膜，其包括至少一个膜层和凹槽结构; 以及包括至少一个覆盖所述凹槽结构的内侧和上端的薄膜层的上部薄膜。 等离子体处理方法包括：通过蚀刻去除上部膜，直到下部膜的槽结构的上端露出; 对槽结构内的上膜的膜层进行蚀刻; 并且通过在完成去除时使用下膜的沟槽结构内的膜层的厚度值来确定终点。

公开(公告)号：US20160336154A1

公开(公告)日：2016-11-17

申请号：US15057158

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Seiichi WATANABE ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01J37/32 ,  G06F17/18 ,  G06F17/11 ,  H01L21/67

CPC classification number: H01J37/32972 ,  H01J37/32192 ,  H01J37/32926 ,  H01J37/3299

Abstract: According to an embodiment of the present invention, a plasma processing apparatus includes: a processing chamber in which plasma processing is performed to a sample; a radio frequency power source that supplies radio frequency power for generating plasma in the processing chamber; and a data processing apparatus that performs processing to light emission data of the plasma. The data processing apparatus performs the processing to the light emission by using an adaptive double exponential smoothing method for varying a smoothing parameter based on an error between input data and a predicted value of smoothed data. A response coefficient of the smoothing parameter is derived by a probability density function including the error as a parameter.

Abstract translation: 根据本发明的实施例，等离子体处理装置包括：对样品进行等离子体处理的处理室; 射频电源，其在处理室中提供用于产生等离子体的射频功率; 以及对等离子体的发光数据进行处理的数据处理装置。 数据处理装置通过使用自适应双指数平滑方法，根据输入数据和平滑数据的预测值之间的误差来改变平滑参数，对发光进行处理。 平滑参数的响应系数通过包含误差作为参数的概率密度函数导出。

公开(公告)号：US20150154145A1

公开(公告)日：2015-06-04

申请号：US14447692

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Seiichi WATANABE ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: G06F17/10

CPC classification number: G06F17/18 ,  H01J37/32963 ,  H01L22/26

Abstract: The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

Abstract translation: 本发明是一种数据处理装置，包括用于接收数据的数据输入/输出装置，用于存储由数据输入/输出装置接收的数据的存储器，用于存储数据处理程序的数据处理程序存储装置，该数据处理程序包括以下步骤： 使用双指数平滑方法计算作为平滑数据的预测值的第一预测值和作为平滑数据的梯度的预测值的第二预测值，并且使用双指数平滑方法来计算其中 第二预测值被设置为输入数据，作为平滑数据的预测值的第三预测值和作为平滑数据的梯度的预测值的第四预测值，以及用于执行数据的数据计算处理装置 在数据处理程序下进行处理。