公开(公告)号：US20140349418A1

公开(公告)日：2014-11-27

申请号：US14452578

申请日：2014-08-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu INOUE ,  Tetsuo ONO ,  Michikazu MORIMOTO ,  Masaki FUJII ,  Masakazu MIYAJI

IPC: H01L21/3065 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/2485 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Abstract translation: 一种等离子体处理方法，其中可以从低微波功率到高微波功率的宽范围内确保稳定的工艺区域。 等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率 每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。

公开(公告)号：US20200273683A1

公开(公告)日：2020-08-27

申请号：US16642187

申请日：2019-02-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuta TAKAGI ,  Kosa HIROTA ,  Yoshiharu INOUE ,  Masakazu MIYAJI

IPC: H01J37/32

Abstract: A plasma processing method includes an etching step of etching a wafer in a chamber, a plasma cleaning step of removing a particle on an inner wall of the chamber by introducing a gas containing a halogen element into the chamber by a plasma processing method for removing remaining halogen or the like in the chamber in a short time and improving throughput, and a remaining halogen removing step of removing the halogen element remaining in the chamber in the plasma cleaning step by alternately repeating an on state and an off state of the plasma containing oxygen in the chamber.