公开(公告)号：US10287680B2

公开(公告)日：2019-05-14

申请号：US15925228

申请日：2018-03-19

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Shintaro Kogura ,  Ryota Sasajima ,  Kosuke Takagi

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/455 ,  C23C16/30 ,  C23C16/36 ,  H01L21/02

摘要： There is provided a technique that includes: forming a film on a substrate in a process chamber by performing: supplying a precursor gas to the substrate through a first nozzle; and supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.

公开(公告)号：US10096463B2

公开(公告)日：2018-10-09

申请号：US15700947

申请日：2017-09-11

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshitomo Hashimoto ,  Tatsuru Matsuoka ,  Masaya Nagato ,  Ryota Horiike ,  Shintaro Kogura

IPC分类号： H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/673 ,  H01L21/677

摘要： A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.

公开(公告)号：US10081868B2

公开(公告)日：2018-09-25

申请号：US15211583

申请日：2016-07-15

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kosuke Takagi ,  Ryota Sasajima ,  Shintaro Kogura ,  Naonori Akae ,  Risa Yamakoshi ,  Toshiki Fujino ,  Masato Terasaki ,  Masayoshi Minami

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/455 ,  C23C16/24 ,  H01L21/02

CPC分类号： C23C16/45563 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/45531 ,  C23C16/45578 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/0228

摘要： Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

公开(公告)号：US10036092B2

公开(公告)日：2018-07-31

申请号：US14859855

申请日：2015-09-21

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Shintaro Kogura ,  Ryota Sasajima

IPC分类号： C23C16/52 ,  C23C16/44 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/52 ,  C23C16/30 ,  C23C16/4408 ,  C23C16/45531 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4584 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228

摘要： A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.

公开(公告)号：US10066294B2

公开(公告)日：2018-09-04

申请号：US15053489

申请日：2016-02-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Ryota Sasajima ,  Shintaro Kogura ,  Masayoshi Minami

IPC分类号： H01L21/311 ,  C23C16/44 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455

CPC分类号： C23C16/4405 ,  C23C16/30 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228

摘要： A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 μm or more and 30 μm or less from the surface of the second nozzle.

公开(公告)号：US09340872B2

公开(公告)日：2016-05-17

申请号：US14752131

申请日：2015-06-26

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Shintaro Kogura ,  Ryota Sasajima

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  H01L21/02 ,  C23C16/52

CPC分类号： C23C16/4405 ,  C23C16/0218 ,  C23C16/30 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/0228

摘要： There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately.

摘要翻译： 提供了一种清洁方法，包括通过向处理室供应清洁气体并经由排气管从处理室排出清洁气体来清洁其中处理基板的处理室的内部; 并且通过保持进入排气管的清洁气体的分布基本停止的状态来冷却排气管。 此外，交替地重复清洁处理室的内部的动作和冷却排气管的动作。