公开(公告)号：US20220310795A1

公开(公告)日：2022-09-29

申请号：US17686463

申请日：2022-03-04

Applicant: HITACHI METALS, LTD.

Inventor： Tsuyoshi MIURA ,  Hodaka ICHIKAWA ,  Naoya KIMURA ,  Hiroyuki OKUDA ,  Taisuke HIROOKA

IPC: H01L29/16 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C23C16/32

Abstract: A method for manufacturing a silicon carbide epitaxial substrate which has a first surface which is a (000-1) C-face, a silicon carbide epitaxial layer located on the first surface of the silicon carbide substrate, and a line-shaped surface defect density on a top surface of the silicon carbide epitaxial layer is less than 1.0 cm−2 and a stacking fault density is less than 1.2 cm−2.

公开(公告)号：US20160218003A1

公开(公告)日：2016-07-28

申请号：US15006423

申请日：2016-01-26

Applicant: HITACHI METALS, LTD.

Inventor： Taisuke HIROOKA ,  Hiroyuki OKUDA

IPC: H01L21/02 ,  G01N23/20

CPC classification number: H01L21/02236 ,  C30B29/36 ,  G01N23/2251 ,  G01N2223/418 ,  G01N2223/634 ,  H01L21/02008 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/02024 ,  H01L22/12 ,  H01L22/20 ,  H01L29/1608

Abstract: A single-crystal silicon carbide substrate has a main surface having a surface roughness fulfilling Ra ≦1 nm, and has a ratio of hidden scratches of less than 50%, where, in the case where the main surface is arbitrary observed at 50 or more observation points with a field of view having a diameter of 100 μm, the ratio of hidden scratches is defined by a value obtained by dividing the number of the observation points at which a striped hidden scratch having a length of at least 50 μm by the total number of the observation points.

Abstract translation: 单晶碳化硅基板具有表面粗糙度达到Ra≤1nm的主表面，并且具有小于50％的隐藏刮痕的比例，其中，在主表面任意观察50°以上的情况下 具有直径为100μm的视野的观察点，隐藏划痕的比率由通过将具有至少50μm的长度的条纹隐藏刮痕的观察点的数量除以总和得到的值来定义 观察点数。