公开(公告)号：US3853650A

公开(公告)日：1974-12-10

申请号：US33193473

申请日：1973-02-12

Applicant: HONEYWELL INC

Inventor： HARTLAUB J

IPC: G01L1/18 ,  G01L7/08 ,  G01L9/00 ,  H01L21/308 ,  H01L29/84 ,  H01L7/00

CPC classification number: H01L29/84 ,  H01L21/308 ,  Y10S148/037 ,  Y10S148/051 ,  Y10S148/135 ,  Y10S148/159 ,  Y10S438/924

Abstract: A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.

Abstract translation: 用作隔膜的半导体层设置在其中具有凹部的基板上。 在通过差分蚀刻提供半导体层之后形成凹部。 方便的半导体层是其中设置感测元件的外延生长层。