公开(公告)号：US20020098613A1

公开(公告)日：2002-07-25

申请号：US09767321

申请日：2001-01-23

Applicant: HRL Laboratories, LLC

Inventor： Robert Y. Loo ,  James H. Schaffner ,  Adele E. Schmitz ,  Tsung-Yuan Hsu ,  Franklin A. Dolezal ,  Gregory L. Tangonan

IPC: H01L021/00

CPC classification number: H01H59/0009

Abstract: Apparatus for a micro-electro-mechanical switch that provides single pole, double throw switching action. The switch comprises a single RF input line and two RF output lines. The switch additionally comprises two armatures, each mechanically connected to a substrate at one end and having a conducting transmission line at the other end with a suspended biasing electrode located on top of or within a structural layer of the armature. Each conducting transmission line has conducting dimples that protrude beyond the bottom of the armature carrying the conducting transmission line. Closure of an armature causes the dimples of the corresponding conducting transmission line to mechanically and electrically engage the RF input line and the corresponding RF output line, thus directing RF energy from the RF input line to the selected RF output line.

Abstract translation: 用于微机电开关的装置，其提供单极双掷切换动作。 该开关包括单个RF输入线和两个RF输出线。 开关另外包括两个电枢，每个电枢在一端机械地连接到基板，并且在另一端处具有导电传输线，其中悬置的偏置电极位于电枢的结构层的顶部或内部。 每个导电传输线具有突出超过承载导电传输线的电枢的底部的导电凹坑。 衔铁的闭合使相应的导电传输线的凹坑机械地和电气地接合RF输入线和相应的RF输出线，从而将RF能量从RF输入线引导到所选择的RF输出线。

公开(公告)号：US20020023999A1

公开(公告)日：2002-02-28

申请号：US09978314

申请日：2001-10-15

Applicant: HRL Laboratories

Inventor： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

IPC: G02B007/04

CPC classification number: H01H59/0009 ,  H01H1/0036 ,  H01H47/24 ,  H01H67/22

Abstract: An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactuate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.

Abstract translation: 描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。 在一个实施例中，用于致动开关的偏置电压通过照亮开关的光电部分而改变，以使开关停止。 在替代实施例中，光伏器件提供电压以完全启动开关而没有任何偏置线。 由于作为施加电压的函数的机电开关的滞后，仅需要施加到开关的电压的适度变化，以使开关在光学控制下急剧地打开或闭合。

公开(公告)号：US20040095205A1

公开(公告)日：2004-05-20

申请号：US10407056

申请日：2003-04-03

Applicant: HRL LABORATORIES, LLC

Inventor： James H. Schaffner ,  Robert Y. Loo

IPC: H01P001/10

CPC classification number: H01P1/127 ,  H01H59/0009 ,  H01H67/22

Abstract: A broadband multiple input, multiple output switch matrix. The switch matrix comprises multiple crosspoint switch element tiles. Each tile comprises RF MEMS switches disposed on a substrate to provide a crosspoint switching capability. The crosspoint switch element tiles are disposed in a flip-chip manner on the upper side of an RF substrate that provides RF connectivity between the various crosspoint switch element tiles. A bias line substrate disposed on the lower side of the RF substrate receives control signals for the crosspoint switch element tiles and routes the signals through the RF substrate using vias in the RF substrate.

Abstract translation: 宽带多输入，多输出开关矩阵。 开关矩阵包括多个交叉点开关元件瓦片。 每个瓦片包括设置在基板上的RF MEMS开关以提供交叉点切换能力。 交叉点开关元件瓦片以倒装芯片的方式设置在提供各种交叉点开关元件瓦片之间的RF连接的RF基板的上侧。 设置在RF基板的下侧的偏置线基板接收用于交叉点开关元件瓦片的控制信号，并且使用RF基板中的通孔将信号路由到RF基板。

公开(公告)号：US20030193012A1

公开(公告)日：2003-10-16

申请号：US10439624

申请日：2003-05-15

Applicant: HRL Laboratories, LLC.

Inventor： Tsung-Yuan Hsu ,  Robert Y. Loo ,  Greg Tangonan ,  Juan F. Lam

IPC: H01L031/00

CPC classification number: H01H59/0009 ,  H01H1/0036 ,  H01H47/24 ,  H01H67/22

Abstract: An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactuate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switcdh without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.

Abstract translation: 描述了一种光学控制的微机电（MEM）开关，其理想地利用其上制造有MEM开关的半导体基板的光导特性。 在一个实施例中，用于致动开关的偏置电压通过照亮开关的光电部分而改变，以使开关停止。 在替代实施例中，光伏器件提供电压以完全驱动开关而没有任何偏置线。 由于作为施加电压的函数的机电开关的滞后，仅需要施加到开关的电压的适度变化，以使开关在光学控制下开启或闭合。

公开(公告)号：US20020055260A1

公开(公告)日：2002-05-09

申请号：US10016894

申请日：2001-12-13

Applicant: HRL Laboratories

Inventor： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

IPC: H01L021/302

CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

Abstract: A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.