公开(公告)号：US20240206189A1

公开(公告)日：2024-06-20

申请号：US18589281

申请日：2024-02-27

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wanliang Tan ,  Yuxing Li ,  Weigu Li ,  Jialin Cai ,  Hangbing Lv ,  JEFFREY JUNHAO XU

IPC: H10B53/20 ,  G11C11/22 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78 ,  H10B51/10 ,  H10B51/20 ,  H10B53/10 ,  H10B53/30

CPC classification number: H10B53/20 ,  G11C11/221 ,  G11C11/2273 ,  G11C11/2275 ,  H01L28/65 ,  H01L29/40111 ,  H01L29/516 ,  H01L29/78391 ,  H10B51/10 ,  H10B51/20 ,  H10B53/10 ,  H10B53/30

Abstract: A ferroelectric memory includes a substrate and a plurality of memory cells formed on the substrate. Each memory cell includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode and a second electrode, and a ferroelectric layer formed between the first electrode and the second electrode. The ferroelectric capacitor further includes a first isolation passivation layer formed between the first electrode and the ferroelectric layer, and a second isolation passivation layer formed between the second electrode and the ferroelectric layer. The first isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the first electrode, and the second isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the second electrode.