公开(公告)号：US20170194326A1

公开(公告)日：2017-07-06

申请号：US15282208

申请日：2016-09-30

Applicant: CHUL-HO KIM ,  SEUNGHAK PARK ,  SIHYUN KIM ,  CHEOLHONG KIM ,  HUNKOOK LEE ,  YONGJU JUNG

Inventor： CHUL-HO KIM ,  SEUNGHAK PARK ,  SIHYUN KIM ,  CHEOLHONG KIM ,  HUNKOOK LEE ,  YONGJU JUNG

IPC: H01L27/105 ,  H01L29/78 ,  H01L23/528

CPC classification number: H01L27/1052 ,  H01L23/5283 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/7827

Abstract: A semiconductor memory device includes stacks on a substrate, each of the stacks including word lines stacked on the substrate and first and second string selection lines laterally spaced apart from each other, vertical pillars passing through the stacks, and first and second bit lines extending longitudinally in a first direction and alternatingly arranged in a second direction crossing the first direction. In a plan view, at least two adjacent ones of the first bit lines in the second direction and at least one of the second bit lines overlap each vertical pillar. A distance between a center of the vertical pillar and one of the first bit lines is different from that between the center of the vertical pillar and another of the first bit lines.

公开(公告)号：US20170040339A1

公开(公告)日：2017-02-09

申请号：US15183252

申请日：2016-06-15

Applicant: HUNKOOK LEE

Inventor： HUNKOOK LEE

IPC: H01L27/115

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11573 ,  H01L28/00

Abstract: A semiconductor device is disclosed. The semiconductor device includes an electrode disposed on a substrate and a plurality of vertical patterns passing through the electrode. The vertical patterns include first vertical patterns arranged to form a rhombus and second vertical patterns arranged to form a non-regular trapezoid or a rhombus.

Abstract translation: 公开了一种半导体器件。 半导体器件包括设置在基板上的电极和穿过电极的多个垂直图案。 垂直图案包括布置成形成菱形的第一垂直图案和布置成形成非规则梯形或菱形的第二垂直图案。