摘要:
A non-volatile memory and a method of controlling an erase operation of the non-volatile memory using a controller are provided. The method of controlling the erase operation includes beginning performance of the erase operation, monitoring a next command to be performed in the non-volatile memory while performing the erase operation, determining an erase status, and continuing, suspending or canceling the erase operation based on the determination result of the erase status.
摘要:
A voltage scaling device of a semiconductor memory device, the voltage scaling device including: a delay tester for determining the number of delay cells of a delay locked loop (DLL) required to cumulatively delay a clock signal having a constant frequency, and which is input to the DLL, by one clock period; a temperature sensor for measuring the temperature of the semiconductor memory device; and a voltage regulator for regulating a supply voltage of a voltage source which provides a chip voltage to the semiconductor memory device in response to the temperature measured by the temperature sensor and a locking value corresponding to the number of delay cells calculated by the delay tester.
摘要:
A memory swapping method and a data processing system using the same, the memory swapping method including receiving queue information for a memory swapping task from a host device; performing part of the memory swapping task in a storage device based on the queue information; receiving a command corresponding to the queue information from the host device after performing of the part of the memory swapping task is completed; and performing a remaining part of the memory swapping task according to the command by using a result of the part of the memory swapping task that had been previously performed.