公开(公告)号：US07354546B2

公开(公告)日：2008-04-08

申请号：US10512095

申请日：2003-07-23

申请人： Hag-Yong Kim ,  Myung-Seop Gil ,  Yoon-Ho Jung ,  Hyung-Jun Kim ,  Bong-Seok Lee

发明人： Hag-Yong Kim ,  Myung-Seop Gil ,  Yoon-Ho Jung ,  Hyung-Jun Kim ,  Bong-Seok Lee

IPC分类号： D01D5/00

CPC分类号： D01D5/0046 ,  Y10S977/84 ,  Y10S977/904

摘要： The present invention relates to a process of preparing a continuous filament composed of a nano fiber, wherein nano fibers are prepared by spinning a polymer spinning dope in a spinning dope main tank (20) onto the surface of water or organic solvent (4a) of a collector (4), which contains water or inorganic solvent (4a) and has a conductive material (5) with a high voltage applied sunken in the water or organic solvent (4a), through nozzles (2) with a high voltage applied, and the nano fibers are pressed, drawn, dried and wound while being pulled by a rotary roller (6) rotating at a constant linear velocity from the location spaced more than 1 cm from one end of a dropping spot. The present invention can prepare a continuous filament composed of a nano fiber by an electrospinning method and a continuous process.

摘要翻译： 本发明涉及一种制备由纳米纤维构成的连续长丝的方法，其中纳米纤维通过将纺丝原液主罐（20）中的聚合物纺丝原液纺丝在水或有机溶剂（4a）的表面上而制备， 的收集器（4），其包含水或无机溶剂（4a），并且具有通过高压施加在水或有机溶剂（4a）中的高压施加的导电材料（5），通过具有高的 施加电压，并且通过由距离滴点的一端间隔超过1cm的位置以一定的线速度旋转的旋转辊（6）拉动，纳米纤维被按压，拉伸，干燥和卷绕。 本发明可以通过静电纺丝法和连续法制备由纳米纤维构成的连续长丝。

公开(公告)号：US20050253305A1

公开(公告)日：2005-11-17

申请号：US10512095

申请日：2003-07-23

申请人： Hag-Yong Kim ,  Myung-Seop Gil ,  Yoon-Ho Jung ,  Hyung-Jun Kim ,  Bong-Seok Lee

发明人： Hag-Yong Kim ,  Myung-Seop Gil ,  Yoon-Ho Jung ,  Hyung-Jun Kim ,  Bong-Seok Lee

IPC分类号： D01D5/00 ,  B29C47/00

CPC分类号： D01D5/0046 ,  Y10S977/84 ,  Y10S977/904

摘要： The present invention relates to a process of preparing a continuous filament composed of a nano fiber, wherein nano fibers are prepared by spinning a polymer spinning dope in a spinning dope main tank (20) onto the surface of water or organic solvent (4a) of a collector (4), which contains water or inorganic solvent (4a) and has a conductive material (5) with a high voltage applied sunken in the water or organic solvent (4a), through nozzles (2) with a high voltage applied, and the nano fibers are pressed, drawn, dried and wound while being pulled by a rotary roller (6) rotating at a constant linear velocity from the location spaced more than 1 cm from one end of a dropping spot. The present invention can prepare a continuous filament composed of a nano fiber by an electrospinning method and a continuous process.

摘要翻译： 本发明涉及一种制备由纳米纤维构成的连续长丝的方法，其中纳米纤维通过将纺丝原液主罐（20）中的聚合物纺丝原液纺丝在水或有机溶剂（4a）的表面上而制备， 的收集器（4），其包含水或无机溶剂（4a），并且具有通过高压施加在水或有机溶剂（4a）中的高压施加的导电材料（5），通过具有高的 施加电压，并且通过由距离滴点的一端间隔超过1cm的位置以一定的线速度旋转的旋转辊（6）拉动，纳米纤维被按压，拉伸，干燥和卷绕。 本发明可以通过静电纺丝法和连续法制备由纳米纤维构成的连续长丝。

公开(公告)号：US07861279B2

公开(公告)日：2010-12-28

申请号：US11702916

申请日：2007-02-06

申请人： Hyung-Jun Kim

发明人： Hyung-Jun Kim

IPC分类号： H04N7/20 ,  H04N7/173 ,  H04H20/71

CPC分类号： H04N5/50 ,  H04N5/4401 ,  H04N21/4384

摘要： An apparatus and method is provided for increasing a channel change speed in a Digital Multimedia Broadcasting (DMB) receiving terminal. The apparatus includes a DMB buffering unit for buffering DMB data, a DMB extractor for extracting only DMB data of a currently set channel, and a controller for setting a changed channel into a DMB signal-receiving unit so that a DMB program can be output using extracted DMB data. DMB data output from the DMB signal-receiving unit is stored in the DMB buffering unit, and DMB data according to a channel set by the user is extracted. Thus, a channel change can be performed without stopping or restarting a DMB receiving operation of the DMB receiving unit, and the time required for the channel change is reduced.

摘要翻译： 提供了一种用于增加数字多媒体广播（DMB）接收终端中的频道变化速度的装置和方法。 该装置包括用于缓冲DMB数据的DMB缓冲单元，用于仅提取当前设置的信道的DMB数据的DMB提取器和用于将改变的信道设置为DMB信号接收单元的控制器，使得可以使用 提取DMB数据。 从DMB信号接收单元输出的DMB数据被存储在DMB缓冲单元中，并且提取根据用户设置的通道的DMB数据。 因此，可以在不停止或重新启动DMB接收单元的DMB接收操作的情况下执行频道改变，并且减少频道改变所需的时间。

公开(公告)号：US07838886B2

公开(公告)日：2010-11-23

申请号：US12401959

申请日：2009-03-11

申请人： Dong-Gyu Kim ,  Sung-Haeng Cho ,  Hyung-Jun Kim ,  Sung-Ryul Kim ,  Yong-Mo Choi

发明人： Dong-Gyu Kim ,  Sung-Haeng Cho ,  Hyung-Jun Kim ,  Sung-Ryul Kim ,  Yong-Mo Choi

IPC分类号： H01L29/04

CPC分类号： G02F1/136213 ,  H01L27/1255

摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

摘要翻译： 一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。 因此，可以形成足够的存储电容，而不会降低开口率并且防止液晶显示器的透射率。 此外，可以通过连接到栅极金属层的连接构件充分形成电容。

公开(公告)号：US07521315B2

公开(公告)日：2009-04-21

申请号：US11318638

申请日：2005-12-28

申请人： Myoung-Shik Kim ,  Hyung-Jun Kim

发明人： Myoung-Shik Kim ,  Hyung-Jun Kim

IPC分类号： H01L21/8234

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14689 ,  H01L27/14692

摘要： An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.

摘要翻译： 提供了能够克服光敏感性降低的图​​像传感器，其由使用单晶硅衬底而提供，并且提供了制造它们的方法。 图像传感器包括单晶硅衬底，在衬底内形成的非晶硅层，形成在非晶硅层中的光电二极管，以及形成在与光电二极管相邻的衬底上的传输栅极，并传送从光电二极管接收的光电子。

公开(公告)号：USD532563S1

公开(公告)日：2006-11-21

申请号：US29252701

申请日：2006-01-26

申请人： Hyung-Jun Kim ,  Young-Seok Lee

设计人： Hyung-Jun Kim ,  Young-Seok Lee

公开(公告)号：US08952876B2

公开(公告)日：2015-02-10

申请号：US12900846

申请日：2010-10-08

申请人： Hyung-Jun Kim ,  Sung-Haeng Cho ,  Yong-Mo Choi

发明人： Hyung-Jun Kim ,  Sung-Haeng Cho ,  Yong-Mo Choi

IPC分类号： G09G3/36 ,  G11C19/28 ,  G02F1/1362 ,  G11C19/18

CPC分类号： G11C19/28 ,  G02F1/1362 ,  G02F2202/104 ,  G11C19/184

摘要： A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.

摘要翻译： 显示基板包括基底基板，形成在基底基板上的第一绝缘层，包括具有第一绝缘层的像素电极的像素，以及包括设置在外围区域上以驱动像素的电路晶体管的电路。 像素包括形成在其上形成有第一绝缘层的基底基板上的第一通道。 第一通道包括形成在第一通道上彼此间隔开的多晶硅层，第一源电极和第一漏极，以及形成在第一源电极和第一漏电极上的第一栅电极， 由透明导电材料形成的第一通道。 多晶硅层通过第一栅电极形成在靠近第一栅电极的第一通道的前通道部分处。

公开(公告)号：US08558240B2

公开(公告)日：2013-10-15

申请号：US13010656

申请日：2011-01-20

申请人： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Jae-Hong Kim

发明人： Hyung-Jun Kim ,  Chang-Oh Jeong ,  Jae-Hong Kim

IPC分类号： H01L27/14

CPC分类号： H01L29/6675 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/42384

摘要： A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.

摘要翻译： 薄膜晶体管显示面板包括衬底，衬底上的栅极线，并且包括栅极线和栅电极; 栅极线上的栅极绝缘层; 栅极绝缘层上的半导体层; 数据线，包括半导体层上的源电极，与源电极相对于栅电极相对的漏电极和数据线; 数据线上的钝化层具有暴露漏电极的接触孔; 以及钝化层上的像素电极，并通过接触孔与漏电极连接。 栅极线分别具有栅极线和栅电极所在的第一区域和第二区域。 第一区域中的栅极线的厚度大于第二区域中的栅极线的厚度。

公开(公告)号：US08304816B2

公开(公告)日：2012-11-06

申请号：US13216874

申请日：2011-08-24

申请人： Myoung-Shik Kim ,  Hyung-Jun Kim

发明人： Myoung-Shik Kim ,  Hyung-Jun Kim

IPC分类号： H01L31/0376

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14689 ,  H01L27/14692

摘要： An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.

摘要翻译： 提供了能够克服光敏感性降低的图​​像传感器，其由使用单晶硅衬底而提供，并且提供了制造它们的方法。 图像传感器包括单晶硅衬底，在衬底内形成的非晶硅层，形成在非晶硅层中的光电二极管，以及形成在与光电二极管相邻的衬底上的传输栅极，并传送从光电二极管接收的光电子。

公开(公告)号：US08183570B2

公开(公告)日：2012-05-22

申请号：US12946953

申请日：2010-11-16

申请人： Dong-Gyu Kim ,  Sung-Haeng Cho ,  Hyung-Jun Kim ,  Sung-Ryul Kim ,  Yong-Mo Choi

发明人： Dong-Gyu Kim ,  Sung-Haeng Cho ,  Hyung-Jun Kim ,  Sung-Ryul Kim ,  Yong-Mo Choi

IPC分类号： H01L29/04

CPC分类号： G02F1/136213 ,  H01L27/1255

摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

摘要翻译： 一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。 因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。 此外，可以通过连接到栅极金属层的连接构件充分形成电容。