Gate array having transistor buried in interconnection region
    1.
    发明授权
    Gate array having transistor buried in interconnection region 失效
    门阵列具有埋在互连区域中的晶体管

    公开(公告)号:US4851891A

    公开(公告)日:1989-07-25

    申请号:US154104

    申请日:1988-02-09

    摘要: A gate array comprises a semiconductor substrate, a plurality of mutually parallel basic cell columns each made up of a plurality of basic cells formed on the semiconductor substrate, where each of the basic cells comprise a pair of first p-channel transistor and first n-channel transistor, a plurality of interconnection regions each formed between two mutually adjacent ones of the basic cell columns, and specific cells buried in one or a plurality of predetermined ones of the interconnection regions, where each of the specific cells comprise at least a second p-channel transistor and a second n-channel transistor which constitute a transmission gate.

    Semiconductor integrated circuit device
    3.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US5040150A

    公开(公告)日:1991-08-13

    申请号:US527977

    申请日:1990-05-24

    IPC分类号: G01R31/3185 G11C29/12

    摘要: A semiconductor integrated circuit device comprising a first circuit forming a random logic and outputting a plurality of first parallel data of plural bits, a second circuit which receives the plurality of first parallel data and supplies a plurality of second parallel data of plural bits to the first circuit, and a test circuit which divides a part of external parallel data of plural bits smaller in number than the first parallel data into a plurality of third parallel data of plural bits in such a manner that the plurality of third parallel data correspond in number to the plurality of first parallel data.