Method of manufacturing signal processing apparatus
    3.
    发明申请
    Method of manufacturing signal processing apparatus 失效
    信号处理装置的制造方法

    公开(公告)号:US20060145789A1

    公开(公告)日:2006-07-06

    申请号:US11360385

    申请日:2006-02-24

    IPC分类号: H01P3/08

    摘要: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space sand between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

    摘要翻译: 在用于发送或处理信号的信号处理装置中,基板在基板的表面具有凹部,第一互连导体位于基板上,至少包括基板的凹部,介质载体膜为 在与衬底的凹陷部分相对的衬底上,在电介质支撑膜和衬底之间具有空隙砂。 第二互连导体在电介质支撑膜的表面的一部分上。 该装置结构简单,传输损耗降低,可以在简单的制造过程中进行。

    Nitride semiconductor device and manufacturing method thereof
    8.
    发明授权
    Nitride semiconductor device and manufacturing method thereof 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US07582908B2

    公开(公告)日:2009-09-01

    申请号:US11691049

    申请日:2007-03-26

    IPC分类号: H01L29/26

    摘要: A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.

    摘要翻译: 提供了能够实现低电阻欧姆特性和高粘合性的氮化物半导体器件及其制造方法。 氮化物半导体器件具有形成半导体元件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n电极。 用作载体供给层的表面变性层设置在GaN衬底和n电极之间。 表面变性层通过使其与含有硅的材料反应而使GaN衬底的背面变性而形成。

    Method of manufacturing signal processing apparatus
    9.
    发明授权
    Method of manufacturing signal processing apparatus 失效
    信号处理装置的制造方法

    公开(公告)号:US07285841B2

    公开(公告)日:2007-10-23

    申请号:US11360385

    申请日:2006-02-24

    IPC分类号: H01P3/08 H01L21/70

    摘要: In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

    摘要翻译: 在用于发送或处理信号的信号处理装置中,基板在基板的表面具有凹部,第一互连导体位于基板上,至少包括基板的凹部,介质载体膜为 在与衬底的凹陷部分相对的衬底上,在介质支撑膜和衬底之间具有空气间隙。 第二互连导体在电介质支撑膜的表面的一部分上。 该装置结构简单,传输损耗降低,可以在简单的制造过程中进行。

    Complex magnetic head
    10.
    发明授权
    Complex magnetic head 失效
    复杂磁头

    公开(公告)号:US5309306A

    公开(公告)日:1994-05-03

    申请号:US895599

    申请日:1992-06-08

    摘要: Complex magnetic head of the present invention eliminates relative magnetic interference between the magnetic heads and relative gap position drift between magnetic heads. The complex magnetic head has high performance and is compatible with lower rank FDDs. The complex magnetic head comprises R/W core track width regulation grooves (52a, 52b, 53a, 53b) filled with glass, erase core track width regulation grooves (55a, 55b, 56a, 56b) filled with glass, R/W core (18, 22) and erase core (20, 24) between shield members formed by these core track width regulation grooves (52a, 52b, 53a, 53b, 55a, 55b, 56a, 56b).

    摘要翻译: 本发明的复杂磁头消除了磁头之间的相对磁干扰和磁头之间的相对间隙位置漂移。 复杂的磁头具有高性能,与低等级FDD兼容。 复磁头包括填充有玻璃的R / W芯轨道宽度调节槽(52a,52b,53a,53b),填充玻璃的擦除芯轨道宽度调节槽(55a,55b,56a,56b),R / W芯 18a,52b,55b,56a,56b)形成的屏蔽部件之间的芯体(20,24)。