公开(公告)号：US20090095968A1

公开(公告)日：2009-04-16

申请号：US12209331

申请日：2008-09-12

申请人： In Cheol Baek ,  Han Choon Lee

发明人： In Cheol Baek ,  Han Choon Lee

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14687

摘要： Provided are an image sensor and a method for manufacturing the same. A trench can be formed through metal interconnection layers of the image sensor in a region corresponding to a light receiving device for each unit pixel. A passivation layer pattern can be provided at sidewalls of the trench to inhibit light incident into the metal interconnection layers and reduce cross-talk and noise. A filler material can be provided to fill the trench. A color filter layer and microlens can be formed on the filler material. The filler material can be, for example, a polymer, an oxide layer, or a photoresist.

摘要翻译： 提供了一种图像传感器及其制造方法。 可以在对应于每个单位像素的光接收装置的区域中通过图像传感器的金属互连层形成沟槽。 可以在沟槽的侧壁处提供钝化层图案，以抑制入射到金属互连层中的光并减少串扰和噪声。 可以提供填充材料以填充沟槽。 可以在填充材料上形成滤色器层和微透镜。 填充材料可以是例如聚合物，氧化物层或光致抗蚀剂。

公开(公告)号：US20090152735A1

公开(公告)日：2009-06-18

申请号：US12241212

申请日：2008-09-30

申请人： Han Choon Lee ,  In Cheol Baek

发明人： Han Choon Lee ,  In Cheol Baek

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/28562 ,  H01L21/76864

摘要： Provided is a method for manufacturing a metal interconnection in a semiconductor device. The semiconductor device fabricated according to one embodiment comprises a copper interconnection having reduced sheet and contact resistance. In the method for manufacturing the copper interconnection, a dielectric comprising a via hole is formed on a semiconductor substrate. A diffusion barrier is deposited in the via hole of the dielectric using a process including a plasma enhanced atomic layer deposition (PEALD) process. A copper metal layer can be formed on the via hole through an electroplating process.

摘要翻译： 提供一种在半导体器件中制造金属互连的方法。 根据一个实施例制造的半导体器件包括具有降低的片和接触电阻的铜互连。 在制造铜互连的方法中，在半导体衬底上形成包括通孔的电介质。 使用包括等离子体增强原子层沉积（PEALD）工艺的工艺在电介质的通孔中沉积扩散阻挡层。 可以通过电镀工艺在通孔上形成铜金属层。

公开(公告)号：US07897425B2

公开(公告)日：2011-03-01

申请号：US12145441

申请日：2008-06-24

申请人： In Cheol Baek ,  Kyung Min Park ,  Sun Chan Lee ,  Han Choon Lee

发明人： In Cheol Baek ,  Kyung Min Park ,  Sun Chan Lee ,  Han Choon Lee

IPC分类号： H01L27/14 ,  H01L21/311

CPC分类号： H01L27/14609 ,  H01L27/14689

摘要： A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

摘要翻译： 一种图像传感器的制造方法。 该方法可以包括在半导体衬底的像素区域上形成栅极，光电二极管和浮动扩散区域; 在所述半导体衬底的像素区域和边缘区域上形成氧化物膜; 通过使用第一光致抗蚀剂图案作为掩模蚀刻氧化膜来形成牺牲氧化物层; 在第一光致抗蚀剂图案，栅极和浮动扩散区上形成金属层; 在栅极和浮动扩散区上形成硅化物层; 蚀刻金属层，第一光致抗蚀剂图案和牺牲氧化物层的剩余非水洗部分; 在所述半导体衬底上形成层间绝缘膜并使所述层间绝缘膜平坦化; 并且通过使用第二光致抗蚀剂图案作为掩模蚀刻层间绝缘膜来形成接触孔并形成边缘开口部。

公开(公告)号：US07524760B2

公开(公告)日：2009-04-28

申请号：US11610899

申请日：2006-12-14

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes a semiconductor substrate having a conductive layer; an interlayer dielectric layer formed on the semiconductor substrate, the interlayer dielectric layer having a hole with a taper angled at the hole's upper portion; a diffusion barrier layer formed on the hole and the interlayer dielectric layer; and a seed layer formed on the diffusion barrier layer.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括具有导电层的半导体衬底; 形成在所述半导体基板上的层间电介质层，所述层间绝缘层具有在所述孔的上部具有锥度的孔; 形成在所述孔和所述层间绝缘层上的扩散阻挡层; 以及形成在扩散阻挡层上的种子层。

公开(公告)号：US20090166884A1

公开(公告)日：2009-07-02

申请号：US12407280

申请日：2009-03-19

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L23/48

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes a semiconductor substrate having a conductive layer; an interlayer dielectric layer formed on the semiconductor substrate, the interlayer dielectric layer having a hole with a taper angled at the hole's upper portion; a diffusion barrier layer formed on the hole and the interlayer dielectric layer; and a seed layer formed on the diffusion barrier layer.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括具有导电层的半导体衬底; 形成在所述半导体基板上的层间电介质层，所述层间绝缘层具有在所述孔的上部具有锥度的孔; 形成在所述孔和所述层间绝缘层上的扩散阻挡层; 以及形成在扩散阻挡层上的种子层。

公开(公告)号：US20080026580A1

公开(公告)日：2008-01-31

申请号：US11782971

申请日：2007-07-25

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L21/441

CPC分类号： H01L21/76843 ,  H01L21/28562

摘要： A method of forming copper metal lines capable of improving surface coatability without forming overhangs of a diffusion barrier film for preventing diffusion of copper in an upper portion of a hole and preventing formation of a copper void is disclosed. The method includes coating a lower layer on a substrate, coating an interlayer insulating film to cover the lower layer, partially and selectively etching the interlayer insulating film to form a trench and a hole such that the lower layer is partially exposed by the hole, and forming diffusion barrier films for preventing diffusion of copper on the interlayer insulating film having the trench and the hole and on the lower layer partially exposed by the hole, wherein the step of forming diffusion barrier films includes forming a first diffusion barrier film for preventing diffusion of copper which is made of a tungsten nitride film and forming a second diffusion barrier film for preventing diffusion of copper which is made of tungsten. The step of forming a first diffusion barrier film includes a first cycle for exposing the substrate to gaseous WF6 and B2H6 and a second cycle for exposing the substrate to NH3.

摘要翻译： 公开了一种形成能够改善表面可涂层性的铜金属线的方法，而不形成用于防止铜在孔的上部扩散并且防止形成铜空隙的扩散阻挡膜的突出端。 该方法包括在基板上涂覆下层，涂覆层间绝缘膜以覆盖下层，部分地和选择性地蚀刻层间绝缘膜以形成沟槽和孔，使得下层部分地被孔暴露，以及 形成用于防止铜在具有沟槽和孔的层间绝缘膜上扩散的扩散阻挡膜，以及部分地被孔暴露的下层，其中形成扩散阻挡膜的步骤包括形成用于防止扩散的第一扩散阻挡膜 铜，其由氮化钨膜制成并形成用于防止由钨制成的铜的扩散的第二扩散阻挡膜。 形成第一扩散阻挡膜的步骤包括用于将衬底暴露于气态WF 6和B 2 H 6 6的第一循环和第二循环 循环，将基底暴露于NH 3。

公开(公告)号：US07732224B2

公开(公告)日：2010-06-08

申请号：US11983569

申请日：2007-11-08

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L21/66

CPC分类号： H01L23/53223 ,  H01L21/32139 ,  H01L21/7685 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a metal line pattern for a semiconductor device is provided. The method includes forming a preliminary structure on a semiconductor substrate, having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness; removing a top surface of the passivation layer so that the passivation layer has a second thickness; forming a sub-passivation layer on the passivation layer; forming an adhesion promoter and a photoresist pattern on the sub-passivation layer; and forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.

摘要翻译： 提供一种形成半导体器件的金属线图案的方法。 该方法包括在具有第一厚度的下阻挡金属层，金属层和上阻挡层和/或钝化层的半导体衬底上形成预备结构; 去除所述钝化层的顶表面，使得所述钝化层具有第二厚度; 在所述钝化层上形成次钝化层; 在所述副钝化层上形成粘合促进剂和光致抗蚀剂图案; 以及通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻初步结构来形成金属线图案。

公开(公告)号：US20080136031A1

公开(公告)日：2008-06-12

申请号：US11983569

申请日：2007-11-08

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L21/4763 ,  H01L23/532

CPC分类号： H01L23/53223 ,  H01L21/32139 ,  H01L21/7685 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a metal line pattern for a semiconductor device is provided. The method includes forming a preliminary structure on a semiconductor substrate, having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness; removing a top surface of the passivation layer so that the passivation layer has a second thickness; forming a sub-passivation layer on the passivation layer; forming an adhesion promoter and a photoresist pattern on the sub-passivation layer; and forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.

摘要翻译： 提供一种形成半导体器件的金属线图案的方法。 该方法包括在具有第一厚度的下阻挡金属层，金属层和上阻挡层和/或钝化层的半导体衬底上形成预备结构; 去除所述钝化层的顶表面，使得所述钝化层具有第二厚度; 在所述钝化层上形成次钝化层; 在所述副钝化层上形成粘合促进剂和光致抗蚀剂图案; 以及通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻初步结构来形成金属线图案。

公开(公告)号：US07601557B2

公开(公告)日：2009-10-13

申请号：US12137612

申请日：2008-06-12

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L21/20

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14685

摘要： Provided is a method of manufacturing an image sensor. A microlens of inorganic material can be formed on a substrate by forming a seed microlens having a top surface with height differences, and then blanket etching the seed microlens to form a dome shaped microlens having a curvature following the height differences of the seed microlens. The height differences in the top surface of the seed microlens can be created by implanting nitrogen at different depths into an inorganic layer to form ion implantation regions, and removing the ion implantation regions from the inorganic layer.

摘要翻译： 提供了一种制造图像传感器的方法。 可以通过形成具有高度差的顶表面的种子微透镜在基底上形成微透镜的无机材料，然后将种子微透镜覆盖以形成具有跟随种子微透镜的高度差的曲率的圆顶形微透镜。 可以通过将不同深度的氮注入无机层中以形成离子注入区域，并从无机层去除离子注入区域来产生种子微透镜顶表面的高度差异。

公开(公告)号：US20080054436A1

公开(公告)日：2008-03-06

申请号：US11846738

申请日：2007-08-29

申请人： In Cheol Baek

发明人： In Cheol Baek

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/367 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a fabricating method thereof are provided. A PMD layer is formed on a semiconductor substrate, and at least one IMD layer is formed on the PMD layer. A through-electrode penetrates through the semiconductor substrate, the PMD layer, and each IMD layer, and a heat emission wiring is formed on an underside of the semiconductor substrate.

摘要翻译： 提供了一种半导体器件及其制造方法。 在半导体衬底上形成PMD层，在PMD层上形成至少一个IMD层。 贯通电极穿过半导体衬底，PMD层和每个IMD层，并且在半导体衬底的下侧形成发热布线。