Method and apparatus for performing handover procedure in wireless communication system including mobile relay node
    2.
    发明授权
    Method and apparatus for performing handover procedure in wireless communication system including mobile relay node 有权
    用于在包括移动中继节点的无线通信系统中执行切换过程的方法和装置

    公开(公告)号:US09426700B2

    公开(公告)日:2016-08-23

    申请号:US14000671

    申请日:2012-03-23

    IPC分类号: H04W36/00 H04W84/00

    CPC分类号: H04W36/0055 H04W84/005

    摘要: A method and apparatus for performing a handover procedure in a wireless communication system including a mobile relay node is provided. A target evolved NodeB (eNB) receives a handover request message containing a list of a plurality of user equipments (UEs) on the mobile relay node or a group handover indication. The target eNB performs an admission control for the plurality of UEs; and transmits a handover request acknowledge message containing a list of admitted UEs for handover among the plurality of UEs.

    摘要翻译: 提供了一种用于在包括移动中继节点的无线通信系统中执行切换过程的方法和装置。 目标演进节点B(eNB)接收包含移动中继节点上的多个用户设备(UE)的列表的切换请求消息或组切换指示。 目标eNB对多个UE执行准入控制; 并且在多个UE之间发送包含被允许UE切换的列表的切换请求确认消息。

    METHOD AND APPARATUS FOR INITIATING X2 INTERFACE SETUP IN WIRELESS COMMUNICATION SYSTEM
    4.
    发明申请
    METHOD AND APPARATUS FOR INITIATING X2 INTERFACE SETUP IN WIRELESS COMMUNICATION SYSTEM 有权
    在无线通信系统中启动X2接口设置的方法和装置

    公开(公告)号:US20130322390A1

    公开(公告)日:2013-12-05

    申请号:US13985181

    申请日:2012-04-27

    IPC分类号: H04W76/02

    摘要: A method and apparatus for transmitting a transport network layer (TNL) address in a wireless communication system is provided. A home eNodeB (HeNB)/X2-proxy determines a TNL address and an eNB ID to be transmitted in a configuration transfer message based on an indication whether a direct X2 interface or an indirect X2 interface is to be established between a macro eNB and a HeNB. Or, in case that the direct X2 interface between the macro eNB and the HeNB is not available, the HeNB GW/X2-proxy modifies the TNL address of the HeNB and the eNB ID of the HeNB in the configuration transfer message into a TNL address of the NeNB GW/X2-proxy and an eNB ID of the HeNB GW/X2-proxy

    摘要翻译: 提供了一种用于在无线通信系统中发送传输网络层(TNL)地址的方法和装置。 家庭eNodeB(HeNB)/ X2代理基于指示是否要建立直接X2接口或间接X2接口来确定在配置传送消息中要发送的TNL地址和eNB ID,所述直接X2接口或间接X2接口将在宏eNB和 HeNB。 或者,在宏eNB和HeNB之间的直接X2接口不可用的情况下,HeNB GW / X2代理将配置传输消息中的HeNB的TNL地址和HeNB的eNB ID修改为TNL地址 的NeNB GW / X2代理和HeNB GW / X2代理的eNB ID

    METHOD AND APPARATUS FOR VERIFYING RELEASE OF LIPA PDN CONNECTION IN WIRELESS COMMUNICATION SYSTEM
    5.
    发明申请
    METHOD AND APPARATUS FOR VERIFYING RELEASE OF LIPA PDN CONNECTION IN WIRELESS COMMUNICATION SYSTEM 有权
    用于在无线通信系统中验证LIPA PDN连接释放的方法和装置

    公开(公告)号:US20130272268A1

    公开(公告)日:2013-10-17

    申请号:US13976220

    申请日:2012-01-06

    IPC分类号: H04W76/06

    摘要: A method and apparatus for verifying a release of a local IP access (LIPA) packet data network (PDN) connection in a wireless communication system is provided. A mobility management entity (MME) receives a handover preparation message from a source home eNodeB (HeNB), verifying whether the LIPA PDN connection has been released or not on receiving the handover preparation message. If the LIPA PDN connection has been released already, the MME performs a normal handover procedure. If the LIPA PDN connection has not been released, the MME transmits a handover preparation failure message to the source HeNB.

    摘要翻译: 提供了一种用于在无线通信系统中验证本地IP接入(LIPA)分组数据网络(PDN)连接的释放的方法和装置。 移动性管理实体(MME)从源家庭eNodeB(HeNB)接收切换准备消息,在接收到切换准备消息时验证是否已经释放了LIPA PDN连接。 如果LIPA PDN连接已经被释放,则MME执行正常的切换过程。 如果LIPA PDN连接尚未被释放,则MME向源HeNB发送切换准备失败消息。

    IMMOBILIZATION METHOD OF BIOACTIVE MOLECULES USING POLYPHENOL OXIDASE
    6.
    发明申请
    IMMOBILIZATION METHOD OF BIOACTIVE MOLECULES USING POLYPHENOL OXIDASE 审中-公开
    使用聚苯乙烯氧化酶的生物活性分子的固定方法

    公开(公告)号:US20130224795A1

    公开(公告)日:2013-08-29

    申请号:US13882539

    申请日:2011-08-19

    IPC分类号: C12P21/00 C12P13/02

    摘要: A method is provided for immobilizing a bioactive molecule onto a surface using polyphenol oxidase. In the presence of polyphenol oxidase, a bioactive molecule containing a phenol or catechol group can be simply in situ oxidized within a short time to dopa or dopaquinone which forms a coordinate bond with a metal or polymer substrate, thus immobilizing the bioactive molecule onto the surface with stability. Based on the surface immobilization of bioactive molecules using polyphenol oxidase, various bioactive molecules such as osteogenetic peptides and growth factors can be simply immobilized to medical metal or polymer substrate surfaces such as orthopedic or dental implants which can be then effectively used to induce rapid osteogenesis after being transplanted. Also, antithrombotic agents and/or entothelialization inducing agents may be immobilized to medical substrates for vascular systems, such as stents and artificial blood vessels, thus guaranteeing hemocompatibility to the medical substrates.

    摘要翻译: 提供了一种使用多酚氧化酶将生物活性分子固定在表面上的方法。 在多酚氧化酶的存在下,含有苯酚或儿茶酚基团的生物活性分子可在短时间内简单地原位氧化成与金属或聚合物底物形成配位键的多巴或多巴醌,从而将生物活性分子固定在表面上 稳定。 基于使用多酚氧化酶的生物活性分子的表面固定化,各种生物活性分子如成骨肽和生长因子可以简单地固定在医疗金属或聚合物基底表面如矫形或牙科植入物上,然后可以有效地用于诱导快速成骨 被移植。 此外,抗血栓形成剂和/或内皮化诱导剂可以固定在用于血管系统如支架和人造血管的医疗基​​底上,从而保证对医用基底的血液相容性。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME 有权
    薄膜晶体管和使用其的显示器件

    公开(公告)号:US20120097965A1

    公开(公告)日:2012-04-26

    申请号:US13072625

    申请日:2011-03-25

    IPC分类号: H01L29/786

    摘要: In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

    摘要翻译: 在薄膜晶体管和具有该薄膜晶体管的显示装置中,根据示例性实施例的薄膜晶体管包括:半导体层,包括沟道区,源极区,漏极区,光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分,源极沟道部分和漏极沟道部分,并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间,并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    显示装置及其制造方法

    公开(公告)号:US20110134381A1

    公开(公告)日:2011-06-09

    申请号:US12957233

    申请日:2010-11-30

    IPC分类号: G02F1/1343 H01L33/08

    摘要: A display device and a method of manufacturing the same are disclosed. In one embodiment, the display device includes: i) a first insulating layer formed on a first substrate, ii) a lower electrode formed on the first insulating layer, iii) a dielectric layer formed to surround the top and side of the lower electrode, wherein the dielectric layer does not cover a pixel region of the display device and iv) an upper electrode formed on the dielectric layer.

    摘要翻译: 公开了一种显示装置及其制造方法。 在一个实施例中,显示装置包括:i)形成在第一基板上的第一绝缘层,ii)形成在第一绝缘层上的下电极,iii)形成为围绕下电极的顶部和侧面的介电层, 其中所述电介质层不覆盖所述显示装置的像素区域,以及iv)形成在所述电介质层上的上电极。

    Image sensor and method for fabricating the same
    10.
    发明授权
    Image sensor and method for fabricating the same 失效
    图像传感器及其制造方法

    公开(公告)号:US07897425B2

    公开(公告)日:2011-03-01

    申请号:US12145441

    申请日:2008-06-24

    IPC分类号: H01L27/14 H01L21/311

    CPC分类号: H01L27/14609 H01L27/14689

    摘要: A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

    摘要翻译: 一种图像传感器的制造方法。 该方法可以包括在半导体衬底的像素区域上形成栅极,光电二极管和浮动扩散区域; 在所述半导体衬底的像素区域和边缘区域上形成氧化物膜; 通过使用第一光致抗蚀剂图案作为掩模蚀刻氧化膜来形成牺牲氧化物层; 在第一光致抗蚀剂图案,栅极和浮动扩散区上形成金属层; 在栅极和浮动扩散区上形成硅化物层; 蚀刻金属层,第一光致抗蚀剂图案和牺牲氧化物层的剩余非水洗部分; 在所述半导体衬底上形成层间绝缘膜并使所述层间绝缘膜平坦化; 并且通过使用第二光致抗蚀剂图案作为掩模蚀刻层间绝缘膜来形成接触孔并形成边缘开口部。