摘要:
A method and apparatus for grouping home eNodeBs (HeNBs) in a wireless communication system is provided. The method includes grouping a plurality of HeNBs into at least one closed subscriber group (CSG) group, and transmitting an identifier (ID) of a specific CSG group to HeNBs included in the specific CSG group.
摘要:
A method and apparatus for performing a handover procedure in a wireless communication system including a mobile relay node is provided. A target evolved NodeB (eNB) receives a handover request message containing a list of a plurality of user equipments (UEs) on the mobile relay node or a group handover indication. The target eNB performs an admission control for the plurality of UEs; and transmits a handover request acknowledge message containing a list of admitted UEs for handover among the plurality of UEs.
摘要:
A method and apparatus for grouping home eNodeBs (HeNBs) in a wireless communication system is provided. The method includes grouping a plurality of HeNBs into at least one closed subscriber group (CSG) group, and transmitting an identifier (ID) of a specific CSG group to HeNBs included in the specific CSG group.
摘要:
A method and apparatus for transmitting a transport network layer (TNL) address in a wireless communication system is provided. A home eNodeB (HeNB)/X2-proxy determines a TNL address and an eNB ID to be transmitted in a configuration transfer message based on an indication whether a direct X2 interface or an indirect X2 interface is to be established between a macro eNB and a HeNB. Or, in case that the direct X2 interface between the macro eNB and the HeNB is not available, the HeNB GW/X2-proxy modifies the TNL address of the HeNB and the eNB ID of the HeNB in the configuration transfer message into a TNL address of the NeNB GW/X2-proxy and an eNB ID of the HeNB GW/X2-proxy
摘要:
A method and apparatus for verifying a release of a local IP access (LIPA) packet data network (PDN) connection in a wireless communication system is provided. A mobility management entity (MME) receives a handover preparation message from a source home eNodeB (HeNB), verifying whether the LIPA PDN connection has been released or not on receiving the handover preparation message. If the LIPA PDN connection has been released already, the MME performs a normal handover procedure. If the LIPA PDN connection has not been released, the MME transmits a handover preparation failure message to the source HeNB.
摘要:
A method is provided for immobilizing a bioactive molecule onto a surface using polyphenol oxidase. In the presence of polyphenol oxidase, a bioactive molecule containing a phenol or catechol group can be simply in situ oxidized within a short time to dopa or dopaquinone which forms a coordinate bond with a metal or polymer substrate, thus immobilizing the bioactive molecule onto the surface with stability. Based on the surface immobilization of bioactive molecules using polyphenol oxidase, various bioactive molecules such as osteogenetic peptides and growth factors can be simply immobilized to medical metal or polymer substrate surfaces such as orthopedic or dental implants which can be then effectively used to induce rapid osteogenesis after being transplanted. Also, antithrombotic agents and/or entothelialization inducing agents may be immobilized to medical substrates for vascular systems, such as stents and artificial blood vessels, thus guaranteeing hemocompatibility to the medical substrates.
摘要:
The present invention relates to a modular electric-vehicle electricity supply device and an electrical wire arrangement method, and more particularly, to an electric-vehicle electricity supply device and electrical wire arrangement method which use a modular approach such that respective modules can be controlled so as to be either ON or OFF; in which a plurality of a magnets disposed at right angles to the direction of travel on a road area provided spaced at predetermined intervals in the direction of travel on the road, and which comprises electricity supply cores formed such that the widths at right angles to the direction of travel on the road are very narrow, and comprises electricity supply wires arranged such that the magnets of electricity supply cores which neighbor each other in the direction of travel on the road have different polarities.
摘要:
In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.
摘要:
A display device and a method of manufacturing the same are disclosed. In one embodiment, the display device includes: i) a first insulating layer formed on a first substrate, ii) a lower electrode formed on the first insulating layer, iii) a dielectric layer formed to surround the top and side of the lower electrode, wherein the dielectric layer does not cover a pixel region of the display device and iv) an upper electrode formed on the dielectric layer.
摘要:
A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.