公开(公告)号：US20070059883A1

公开(公告)日：2007-03-15

申请号：US11459599

申请日：2006-07-24

申请人： Han-Mei CHOI ,  Chang-Hyun Lee ,  Seung-Hwan LEE ,  Young-Geun PARK ,  Sun-Jung KIM ,  Young-Sun KIM

发明人： Han-Mei CHOI ,  Chang-Hyun Lee ,  Seung-Hwan LEE ,  Young-Geun PARK ,  Sun-Jung KIM ,  Young-Sun KIM

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L27/11568

摘要： A method of fabricating a floating trap type nonvolatile memory device is provided. The method includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulating layer sequentially stacked; thermally annealing a resultant substrate including the cell gate insulating layer in a temperature range of 810-100° C.; and forming a gate electrode on the thermally annealed cell gate insulating layer.

摘要翻译： 提供一种制造浮动阱型非易失性存储器件的方法。 该方法包括在半导体衬底上形成单元栅极绝缘层，该单元栅极绝缘层由下层绝缘层，电荷存储层和上部绝缘层构成; 在810-100℃的温度范围内热退火包含电池栅极绝缘层的所得衬底; 以及在所述热退火单元栅极绝缘层上形成栅电极。

公开(公告)号：US20070134868A1

公开(公告)日：2007-06-14

申请号：US11672916

申请日：2007-02-08

申请人： Han-Mei CHOI ,  Chang-Hyun LEE ,  Seung-Hwan LEE ,  Young-Geun PARK ,  Sung-Jung KIM ,  Young-Sun KIM

发明人： Han-Mei CHOI ,  Chang-Hyun LEE ,  Seung-Hwan LEE ,  Young-Geun PARK ,  Sung-Jung KIM ,  Young-Sun KIM

IPC分类号： H01L21/8238

CPC分类号： H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11568 ,  H01L27/11573

摘要： A method of fabricating a floating trap type nonvolatile memory device includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulating layer sequentially stacked; thermally annealing the cell gate insulating Layer at a temperature of approximately 810° C. to approximately 1370° C.; and forming a gate electrode on the thermally annealed cell gate insulating layer.

摘要翻译： 一种制造浮动阱型非易失性存储器件的方法包括：在半导体衬底上形成单元栅极绝缘层，所述栅极绝缘层由下层绝缘层，电荷存储层和上部绝缘层构成; 在大约810℃至大约137​​0℃的温度下对单元栅极绝缘层进行热退火; 以及在所述热退火单元栅极绝缘层上形成栅电极。

公开(公告)号：US20070098892A1

公开(公告)日：2007-05-03

申请号：US11468932

申请日：2006-08-31

申请人： Eun-Ae CHUNG ,  Kyoung-Ryul YOON ,  Ki-Vin IM ,  Jae-Hyun YEO ,  Sung-Tae KIM ,  Young-Sun KIM ,  Young-Geun PARK

发明人： Eun-Ae CHUNG ,  Kyoung-Ryul YOON ,  Ki-Vin IM ,  Jae-Hyun YEO ,  Sung-Tae KIM ,  Young-Sun KIM ,  Young-Geun PARK

IPC分类号： C23C16/00 ,  B05D3/02 ,  B05D5/12

CPC分类号： H01L21/022 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31641 ,  H01L28/55

摘要： In a method of forming a layer and a method of manufacturing a capacitor using the same, a preliminary zirconium oxide film is formed on a substrate by introducing a first reactant including a zirconium precursor, and a first oxidant onto the substrate. A thermal treatment is performed on the preliminary zirconium oxide film to form a first zirconium oxide film having a dense and crystalline structure. An aluminum oxide film is formed on the first zirconium oxide film by introducing a second reactant including an aluminum precursor, and a second oxidant onto the substrate. The thermally-treated layer including the first zirconium oxide film and the aluminum oxide film may form a dielectric layer of a capacitor.

摘要翻译： 在形成层的方法和使用其制造电容器的方法中，通过将包含锆前体和第一氧化剂的第一反应物引入到衬底上，在衬底上形成预氧化锆膜。 对预氧化锆膜进行热处理，以形成具有致密和结晶结构的第一氧化锆膜。 通过将包含铝前体和第二氧化剂的第二反应物引入到基底上，在第一氧化锆膜上形成氧化铝膜。 包含第一氧化锆膜和氧化铝膜的热处理层可以形成电容器的电介质层。

公开(公告)号：US20110309152A1

公开(公告)日：2011-12-22

申请号：US12950467

申请日：2010-11-19

申请人： Young-Sun KIM

发明人： Young-Sun KIM

IPC分类号： G06K19/077 ,  G06F17/00 ,  H01L21/50

CPC分类号： G06K19/077 ,  H01L2224/48227 ,  H01L2924/181 ,  H01L2924/00012

摘要： A plastic card package and a method of manufacturing the plastic card package are provided. The plastic card package includes: a socket insertion area that is formed to expose an I/O terminal corresponding to a contact terminal of a socket electrically connected to a printed circuit board of an electronic apparatus; and a socket non-insertion area that horizontally extends from the socket insertion area and has a thickness greater than that of the socket insertion area. Accordingly, it is possible to cause the plastic card to have different thicknesses by areas so as to stably built a semiconductor chip therein and to stably mount stacked semiconductor chips thereon.

摘要翻译： 提供一种塑料卡包装及其制造方法。 该塑料卡封装包括：插座插入区域，其形成为暴露与电连接到电子设备的印刷电路板的插座的接触端子对应的I / O端子; 以及从插座插入区域水平延伸并且具有大于插座插入区域的厚度的插座非插入区域。 因此，可以使塑料卡具有不同的厚度区域，以便在其中稳定地构建半导体芯片，并且在其上稳定地安装堆叠的半导体芯片。