公开(公告)号：US6052354A

公开(公告)日：2000-04-18

申请号：US981425

申请日：1997-12-23

申请人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Rolv M.o slashed.ll Nilsen ,  Thormod N.ae butted.ringsrud

发明人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Rolv M.o slashed.ll Nilsen ,  Thormod N.ae butted.ringsrud

IPC分类号： G02B5/18 ,  G11B7/0033 ,  G11B7/0065 ,  G11B7/24 ,  G11C13/04 ,  G11B7/00

CPC分类号： G11B7/0033 ,  G11B7/0065 ,  G11B7/24 ,  G11C13/04

摘要： In an optical data storage medium with a storage area formed from a transparent, homogenous base material and with a number of optically active structures at one side of the storage area, the optically active structures are diffractive optical elements which can focus a beam of light incident on the storage area on to one or more points in the storage area and/or a redirected beam of light or emitted light radiation from this or these points on to a point outside the optical storage medium. During writing/reading of data in the storage medium, the diffractive optical elements are used for focusing the write/read beam in order to generate a data carrying structure or read data stored in such a data carrying structure, respectively. By exploiting the special optical properties of diffractive optical elements, it is possible to achieve parallel writing/reading of data, possibly in several parallel storage layers in the optical storage medium or randomly distributed therein, the optical storage medium thus providing a genuine volumetric storage and a corresponding genuine volumetric accessing of the stored data.

摘要翻译： PCT No.PCT / NO96 / 00155 Sec。 371 1997年12月23日第 102（e）1997年12月23日PCT PCT 1996年6月24日PCT公布。 出版物WO97 / 01171 日期1997年1月9日在具有由透明均质基材形成的存储区域和在存储区域的一侧具有多个光学活性结构的光学数据存储介质中，光学活性结构是可聚焦的衍射光学元件 入射到存储区域中的光束到存储区域中的一个或多个点和/或重定向的光束或发射的光辐射从该或这些点到光存储介质外的点。 在存储介质中写入/读取数据期间，衍射光学元件用于聚焦写入/读取光束，以便分别产生存储在这种数据承载结构中的数据承载结构或读取数据。 通过利用衍射光学元件的特殊光学特性，可以实现数据的并行写入/读取，可能在光存储介质中的几个并行存储层中或随机分布在其中，光学存储介质因此提供真正的容积存储， 存储数据的对应的真实容量访问。

公开(公告)号：US07352612B2

公开(公告)日：2008-04-01

申请号：US10579968

申请日：2004-11-24

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gude Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gude Gudesen

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.

摘要翻译： 在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用， 到电压脉冲协议。 在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲 的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。 因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。 设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。 在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

公开(公告)号：US06762950B2

公开(公告)日：2004-07-13

申请号：US10306229

申请日：2002-11-29

申请人： Hans Gude Gudesen ,  Per-Erik Nordal

发明人： Hans Gude Gudesen ,  Per-Erik Nordal

IPC分类号： G11C1122

CPC分类号： G11C11/22 ,  H01L27/10

摘要： A ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers with stripe-like electrodes forming word lines and bit lines of a matrix-addressable memory array, memory cells are defined in volumes of memeory material in between two crossing word lines and bit lines and a plurality of memory arrays are provided in a stacked arrangement. A stack of memory arrays is formed by tow or more ribbon-like structures, which are folded and/or braided into each other. Each ribbon-like structure includes a flexible substrate of non-conducting material and the electrode layers respectively provided on each surface of the substrate and including the parallel strip-like electrodes extending along the ribbon-like structure. A layer of memory material covers one of the electrode layers whereby each memory array of the stack is formed by overlapping portions of a pair of adjacent ribbon-like structures and crossing in substantially orthogonal relationship.

摘要翻译： 具有记忆材料的铁电体或驻极体体积存储装置，其具有在形成矩阵可寻址存储器阵列的字线和位线的带条形电极的第一和第二电极层之间夹层提供的存储器单元， 以堆叠的方式设置两个交叉字线和位线以及多个存储器阵列。 一叠存储器阵列由丝束状或更多的带状结构形成，这些结构被折叠和/或编织成彼此。 每个带状结构包括非导电材料的柔性基板和分别设置在基板的每个表面上并包括沿着带状结构延伸的平行条状电极的电极层。 存储器材料层覆盖电极层之一，由此堆叠的每个存储器阵列由一对相邻的带状结构的重叠部分形成，并以基本正交的关系交叉。

公开(公告)号：US06498744B2

公开(公告)日：2002-12-24

申请号：US09978034

申请日：2001-10-17

申请人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr Ivarsson Leistad

发明人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr Ivarsson Leistad

IPC分类号： G11C1122

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/0688

摘要： In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent toelectrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence be used for implementing volumetric data processing devices.

摘要翻译： 在用于处理和/或存储具有无源或电寻址的数据的铁电数据处理装置中，数据承载介质以铁电材料薄膜（1）的形式使用，其通过施加的电场被极化以确定极化 状态或在这些之间切换并且以矩阵的形式提供为电极结构中或邻近的连续层。 逻辑元件（4）形成在电极矩阵的x电极（2）和y电极（3）之间的相交处。 逻辑元件（4）通过向电极（2,3）施加大于铁电材料的矫顽力场的电压来寻址。 取决于极化状态和铁电材料的磁滞回线的形式，获得逻辑元件（4）中极化状态的不同检测，并且还可以在逻辑元件的极化状态之间切换，其中 因此可以用于实现双稳态开关或存储单元。 如果分离的层被电绝缘层分开，则根据本发明的数据处理设备可以层叠堆叠，并且因此用于实现体积数据处理设备。

公开(公告)号：US20080151609A1

公开(公告)日：2008-06-26

申请号：US12010067

申请日：2008-01-18

申请人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gude Gudesen

发明人： Per Hamberg ,  Christer Karlsson ,  Per-Erik Nordal ,  Nicklas Ojakangas ,  Johan Carlsson ,  Hans Gude Gudesen

IPC分类号： G11C11/00 ,  G11C8/00

CPC分类号： G11C11/22 ,  G06F12/0238 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C8/12 ,  G11C2013/0083

摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.

摘要翻译： 在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。 设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。 每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。 在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。 基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

公开(公告)号：US06765617B1

公开(公告)日：2004-07-20

申请号：US09341311

申请日：1999-07-08

申请人： Reidar E. Tangen ,  Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr I. Leistad

发明人： Reidar E. Tangen ,  Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr I. Leistad

IPC分类号： H04N5225

CPC分类号： H04N9/045 ,  H01L27/14627 ,  H04N5/3415 ,  H04N2209/046

摘要： An optoelectronic camera comprises an objective system formed by a number of optical active structures (L), particularly refractive structures in the form of microlenses or lenslets provided in an array. A detector device (D) is assigned to the lens array and comprises detectors (Dn) formed by sensor elements (E) which define pixels in the optical image. Each detector (Dn) defines a sample of the optical image and optimally all samples are used to generate a digital image. The optoelectronic camera may be realized as a color image camera, particularly for recording images in an RGB system. In a method for digital electronic formatting of an image recorded with the optoelectronic camera, zoom and pan functions are implemented in the camera.

摘要翻译： 光电照相机包括由许多光学有源结构（L）形成的物镜系统，特别是以阵列形式提供的微透镜或小透镜形式的折射结构。 检测器装置（D）被分配给透镜阵列，并且包括由限定光学图像中的像素的传感器元件（E）形成的检测器（Dn）。 每个检测器（Dn）定义光学图像的样本，并且最佳地使用所有样本来产生数字图像。 光电相机可以被实现为彩色图像相机，特别是用于在RGB系统中记录图像。 在用光电相机记录的图像的数字电子格式化方法中，在相机中实现变焦和平移功能。

公开(公告)号：US06380597B1

公开(公告)日：2002-04-30

申请号：US09297521

申请日：1999-09-13

申请人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr I. Leistad

发明人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr I. Leistad

IPC分类号： G11C1706

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C11/5692 ,  G11C13/0016 ,  H01L27/112

摘要： A read-only memory is made electrically addressable over a passive conductor matrix, wherein the volume between intersection of two conductors (2; 4) in the matrix defines a memory cell (5). Data are stored as impedance values in the memory cells. The memory cells (5) comprise either an isolating material (6) which provides high impedance or one or more inorganic or organic semiconductors (9), preferably with an anisotropic conducting property. The semiconductor material (9) forms a diode junction at the interface to a metallic conductor (2; 4) in the matrix. By suitable arrangement of respectively the isolating material (6) and semiconductor material (9) in the memory cells these may be given a determined impedance value which may be read electrically and corresponds to logical values in a binary or multi-valued code. One or more read-only memories (ROM) may be provided on a semiconductor substrate (1) which also comprises driver and control circuits (13), to accomplish a read-only memory device. The device may be realized either planar or also volumetrically by stacking several read-only memories (ROM) in horizontal layers (15) and connecting them with the substrate (1) via addressing buses.

摘要翻译： 只读存储器在无源导体矩阵上可电寻址，其中矩阵中两个导体（2; 4）的相交之间的体积限定了存储单元（5）。 数据作为阻抗值存储在存储单元中。 存储单元（5）包括提供高阻抗的隔离材料（6）或一个或多个无机或有机半导体（9），优选具有各向异性导电性能。 半导体材料（9）在与基体中的金属导体（2; 4）的界面处形成二极管结。 通过分别将存储单元中的隔离材料（6）和半导体材料（9）适当地布置，这些可以被给予确定的阻抗值，其可以被电读取并对应于二值或多值代码中的逻辑值。 可以在也包括驱动器和控制电路（13）的半导体衬底（1）上提供一个或多个只读存储器（ROM），以实现只读存储器件。 该装置可以通过在水平层（15）中堆叠几个只读存储器（ROM）并且经由寻址总线将其与衬底（1）连接来实现平面或体积式地实现。

公开(公告)号：US07211885B2

公开(公告)日：2007-05-01

申请号：US10390178

申请日：2003-03-14

申请人： Per-Erik Nordal ,  Hans Gude Gudesen ,  Geirr Ivarsson Leidstad ,  Göran Gustafsson ,  Johan Carlsson

发明人： Per-Erik Nordal ,  Hans Gude Gudesen ,  Geirr Ivarsson Leidstad ,  Göran Gustafsson ,  Johan Carlsson

IPC分类号： H01L23/02

CPC分类号： H01L24/25 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0657 ,  H01L2224/24051 ,  H01L2224/24145 ,  H01L2224/24146 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/25175 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00

摘要： In a memory and/or data processing device having at least two stacked layers which are supported by a substrate or forming a sandwiched self-supporting structure, wherein the layers include memory and/or processing circuitry with mutual connections between the layers and/or to circuitry in the substrate, the layers the are mutually arranged such that contiguous layers form a staggered structure on at least one edge of the device and at least one electrical edge conductor is provided passing over the edge on one layer and down one step at a time, enabling the connection to an electrical conductor in any of the following layers in the stack. A method for manufacturing a device of this kind includes the steps for adding the layers successively, one layer at a time, such that the layers form a staggered structure, and for providing one or more layers with at least one electrical contact pad for linking to one or more interlayer edge connectors.

摘要翻译： 在具有由衬底支撑或形成夹层自支撑结构的至少两个层叠层的存储器和/或数据处理设备中，其中所述层包括存储器和/或处理电路，所述存储器和/或处理电路具有层之间的相互连接和/或 电路在衬底中，这些层被相互布置，使得连续的层在器件的至少一个边缘上形成交错的结构，并且至少一个电气边缘导体被提供在一个层上沿着边缘通过并且一次一个下降 ，使得能够连接到堆叠中的以下任何层中的电导体。 用于制造这种装置的方法包括以下步骤：一次一层地层叠这些层，使得这些层形成交错结构，并且用于提供一层或多层具有至少一个电接触垫，用于连接到 一个或多个夹层边缘连接器。

公开(公告)号：US06950330B2

公开(公告)日：2005-09-27

申请号：US10934573

申请日：2004-09-07

申请人： Michael O. Thompson ,  Per-Erik Nordal ,  Hans Gude Gudesen ,  Johan Carlsson ,  Göran Gustafsson

发明人： Michael O. Thompson ,  Per-Erik Nordal ,  Hans Gude Gudesen ,  Johan Carlsson ,  Göran Gustafsson

IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36 ,  G11C7/06 ,  G11C7/10 ,  G11C8/18 ,  G11C11/22

CPC分类号： G11C11/22 ,  G09G3/20 ,  G09G3/3629 ,  G09G2300/06 ,  G09G2310/0251 ,  G09G2320/0209 ,  G11C7/06 ,  G11C7/1006 ,  G11C8/18

摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.

公开(公告)号：US06937500B2

公开(公告)日：2005-08-30

申请号：US10659428

申请日：2003-09-11

申请人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr I. Leistad ,  Per Bröms ,  Per Sandström ,  Mats Johansson

发明人： Hans Gude Gudesen ,  Per-Erik Nordal ,  Geirr I. Leistad ,  Per Bröms ,  Per Sandström ,  Mats Johansson

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

摘要翻译： 说明矩阵寻址铁电或驻极体存储器件及其操作方法。 该方法包括当读取数据时在存储器中的第一和第二组电极上施加第一多个电压差，以及当刷新或重写数据时施加第二多个电压差。 第一和第二多个电压差对应于包括电压脉冲的时间序列的电位电平集合。 指示存储器单元响应的变化的至少一个参数用于确定电压脉冲的至少一个校正因子，从而相应地调整脉冲参数。 存储器件包括用于确定至少一个参数的装置，与用于确定校正因子的装置连接的校准存储器以及用于调整应用于存储器件中的读和写操作的脉冲参数的控制电路。