公开(公告)号：US20070029911A1

公开(公告)日：2007-02-08

申请号：US11185004

申请日：2005-07-19

申请人： Heather Hudspeth ,  Ji Lee ,  Reed Corderman ,  Anping Zhang ,  Renee Rohling ,  Lauraine Denault ,  Joleyn Balch

发明人： Heather Hudspeth ,  Ji Lee ,  Reed Corderman ,  Anping Zhang ,  Renee Rohling ,  Lauraine Denault ,  Joleyn Balch

IPC分类号： H01J1/02 ,  B05D5/12 ,  H01J9/04

CPC分类号： H01J1/304 ,  H01J3/021 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

公开(公告)号：US20070085459A1

公开(公告)日：2007-04-19

申请号：US11185007

申请日：2005-07-19

申请人： Heather Hudspeth ,  Reed Corderman ,  Renee Rohling ,  Lauraine Denault

发明人： Heather Hudspeth ,  Reed Corderman ,  Renee Rohling ,  Lauraine Denault

IPC分类号： H01J1/02 ,  H01J9/02 ,  H01J1/00

CPC分类号： H01J1/304 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

公开(公告)号：US20070273263A1

公开(公告)日：2007-11-29

申请号：US11835691

申请日：2007-08-08

申请人： Heather Hudspeth ,  Reed Corderman ,  Renee Rohling ,  Lauraine Denault

发明人： Heather Hudspeth ,  Reed Corderman ,  Renee Rohling ,  Lauraine Denault

IPC分类号： H01J1/02

CPC分类号： H01J1/304 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

摘要翻译： 本发明涉及门控纳米棒场发射器件，其中这种器件具有相对较小的发射极尖对栅极距离，从而提供相对高的发射极尖端密度和低导通电压。 这种方法采用传统的器件处理技术（光刻，蚀刻等）与纳米棒的电化学沉积的组合。 这些方法相对简单，成本效益高，效率高; 并且它们提供适用于X射线成像应用，照明应用，平板场发射显示（FED）应用等的场致发射器件。

公开(公告)号：US20060270229A1

公开(公告)日：2006-11-30

申请号：US11141613

申请日：2005-05-27

申请人： Reed Corderman ,  Heather Hudspeth ,  Renee Rohling ,  Lauraine Denault ,  Scott Miller

发明人： Reed Corderman ,  Heather Hudspeth ,  Renee Rohling ,  Lauraine Denault ,  Scott Miller

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C25D11/16 ,  B82Y10/00 ,  B82Y30/00 ,  C04B35/111 ,  C04B38/0006 ,  C04B2111/00008 ,  C23C26/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/345 ,  C23C28/3455 ,  C25D11/00 ,  C25D11/18 ,  C04B38/0054

摘要： In some embodiments, the present invention is directed to nanoporous anodized aluminum oxide templates of high uniformity and methods for making same, wherein such templates lack a AAO barrier layer. In some or other embodiments, the present invention is directed to methods of electrodepositing nanorods in the nanopores of these templates. In still other embodiments, the present invention is directed to electrodepositing catalyst material in the nanopores of these templates and growing nanorods or other 1-dimensional nanostructures via chemical vapor deposition (CVD) or other techniques.

摘要翻译： 在一些实施方案中，本发明涉及高均匀性的纳米多孔阳极氧化铝氧化物模板及其制备方法，其中这种模板缺少AAO阻挡层。 在一些或其他实施方案中，本发明涉及在这些模板的纳米孔中电沉积纳米棒的方法。 在其它实施方案中，本发明涉及通过化学气相沉积（CVD）或其它技术在这些模板的纳米孔中电沉积催化剂材料和生长纳米棒或其它一维纳米结构。

公开(公告)号：US20070247048A1

公开(公告)日：2007-10-25

申请号：US11234023

申请日：2005-09-23

申请人： Anping Zhang ,  Joleyn Balch ,  Loucas Tsakalakos ,  Heather Hudspeth ,  Reed Corderman

发明人： Anping Zhang ,  Joleyn Balch ,  Loucas Tsakalakos ,  Heather Hudspeth ,  Reed Corderman

IPC分类号： H01J1/00 ,  H01J9/00

CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J35/065 ,  H01J2201/30469

摘要： In a method of making a field emitter, at least one post (120) is formed on a semiconductor substrate (110). The post (120) extends upwardly from the substrate (110). The post (120) is monocrystalline with the substrate (110). A dielectric layer (130) is deposited on the substrate (110). The dielectric layer (130) defines a via (132) therethrough about the post (120). A conductive gate layer (140) is applied to the dielectric layer (130) so that the conductive gate layer (140) defines an opening that is juxtaposed with the via (132). At least one nanostructure (150) is grown upwardly from the top surface of the post (120).

摘要翻译： 在制造场致发射体的方法中，至少一个柱（120）形成在半导体衬底（110）上。 柱（120）从衬底（110）向上延伸。 柱（120）与衬底（110）是单晶的。 介电层（130）沉积在衬底（110）上。 电介质层（130）限定通过其穿过柱（120）的通孔（132）。 导电栅极层（140）被施加到电介质层（130），使得导电栅极层（140）限定与通孔（132）并置的开口。 至少一个纳米结构（150）从柱（120）的顶表面向上生长。