公开(公告)号：US20080213974A1

公开(公告)日：2008-09-04

申请号：US11957674

申请日：2007-12-17

申请人： Hidehiko OKUDA ,  Tatsumi KUSABA ,  Akihiko ENDO

发明人： Hidehiko OKUDA ,  Tatsumi KUSABA ,  Akihiko ENDO

IPC分类号： H01L21/30

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。

公开(公告)号：US20120126361A1

公开(公告)日：2012-05-24

申请号：US13363974

申请日：2012-02-01

申请人： Yoshiro AOKI ,  Noashi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

发明人： Yoshiro AOKI ,  Noashi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

IPC分类号： H01L29/06

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

摘要翻译： 将少量的氧离子注入晶片表面层，然后进行热处理，以便在表面层中形成不完全的注入氧化膜。 因此，晶片成本降低; 防止在外延膜的表面形成凹坑; 并且防止在晶片的外周部形成滑动。

公开(公告)号：US20090321874A1

公开(公告)日：2009-12-31

申请号：US12483439

申请日：2009-06-12

申请人： Yoshiro AOKI ,  Naoshi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

发明人： Yoshiro AOKI ,  Naoshi ADACHI ,  Akihiko ENDO ,  Yoshihisa NONOGAKI

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.

摘要翻译： 将少量的氧离子注入晶片表面层，然后进行热处理，以便在表面层中形成不完全的注入氧化膜。 因此，晶片成本降低; 防止在外延膜的表面形成凹坑; 并且防止在晶片的外周部形成滑动。

公开(公告)号：US20090023272A1

公开(公告)日：2009-01-22

申请号：US12235443

申请日：2008-09-22

申请人： Hideki NISHIHATA ,  Nobuyuki MORIMOTO ,  Akihiko ENDO

发明人： Hideki NISHIHATA ,  Nobuyuki MORIMOTO ,  Akihiko ENDO

IPC分类号： H01L21/304

CPC分类号： H01L21/26506 ,  H01L21/26533 ,  H01L21/76254

摘要： There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.

摘要翻译： 提供了一种通过将用于有源层和支撑层的两个硅晶片彼此粘合然后使用于活性层的晶片的表面注入氮离子的有源层的晶片变薄来形成接合晶片的方法，以形成 在接合之前用于有源层的晶片内部的氮化物层。

公开(公告)号：US20080227271A1

公开(公告)日：2008-09-18

申请号：US11955765

申请日：2007-12-13

申请人： Nobuyuki MORIMOTO ,  Akihiko ENDO

发明人： Nobuyuki MORIMOTO ,  Akihiko ENDO

IPC分类号： H01L21/30

CPC分类号： H01L21/02052 ,  H01L21/2007 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括臭氧洗涤两个硅晶片以在两个硅晶片的每个表面上形成厚度等于或小于2.2nm的氧化物膜，并且通过形成的氧化膜将两个硅晶片接合以获得接合晶片。

公开(公告)号：US20080061452A1

公开(公告)日：2008-03-13

申请号：US11851065

申请日：2007-09-06

申请人： Hideki NISHIHATA ,  Nobuyuki MORIMOTO ,  Akihiko ENDO

发明人： Hideki NISHIHATA ,  Nobuyuki MORIMOTO ,  Akihiko ENDO

IPC分类号： H01L21/30 ,  H01L23/58

CPC分类号： H01L21/76254

摘要： The present invention provides a method of manufacturing a bonded wafer. When bonding the top wafer through an insulating film exceeding about 1,000 Angstroms in thickness to the base wafer, a top wafer and a base wafer in which the total number of particles having a size of equal to or greater than about 0.20 micrometers present on the two surfaces being bonded is equal to or less than about 0.014 particles/cm2 are bonded; and when bonding the top wafer through an insulating film having a thickness of equal to or less than about 1,000 Angstroms to the base wafer, or with no insulating film present between the top wafer and the base wafer, a top wafer and a base wafer are bonded wherein the total number of particles having a size of equal to or greater than about 0.20 micrometers present on the two surfaces being bonded is equal to or less than about 0.007 particles/cm2.

摘要翻译： 本发明提供一种制造接合晶片的方法。 当将顶部晶片通过超过约1,000埃厚度的绝缘膜与基底晶片接合时，顶部晶片和基底晶片，其中具有等于或大于约0.20微米的尺寸的总数存在于两个 键合的表面等于或小于约0.014个/ cm 2; 并且当通过具有等于或小于约1,000埃的厚度的绝缘膜将顶部晶片接合到基底晶片时，或者在顶部晶片和基底晶片之间不存在绝缘膜时，顶部晶片和基底晶片是 其中存在于粘合的两个表面上的具有等于或大于约0.20微米的尺寸的颗粒的总数等于或小于约0.007个/ cm 2。

公开(公告)号：US20110136267A1

公开(公告)日：2011-06-09

申请号：US12869894

申请日：2010-08-27

申请人： Etsurou MORITA ,  Akihiko ENDO ,  Yoshihisa NONOGAKI ,  Hideki NISHIHATA

发明人： Etsurou MORITA ,  Akihiko ENDO ,  Yoshihisa NONOGAKI ,  Hideki NISHIHATA

IPC分类号： H01L21/66

CPC分类号： H01L27/1469 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.

摘要翻译： 测量从其镜面加工表面延伸到固态图像感测装置的半导体晶片层的厚度。 基于剩余厚度数据，通过控制等离子体蚀刻量，从镜面加工表面进行等离子体蚀刻直到达到预定厚度。 通过这样做，可以以低成本降低固体摄像装置的厚度变化，而不会增加处理次数。

公开(公告)号：US20110084367A1

公开(公告)日：2011-04-14

申请号：US12897907

申请日：2010-10-05

申请人： Hideki NISHIHATA ,  Yoshihisa NONOGAKI ,  Akihiko ENDO

发明人： Hideki NISHIHATA ,  Yoshihisa NONOGAKI ,  Akihiko ENDO

IPC分类号： H01L23/00 ,  H01L21/762

CPC分类号： H01L21/76243

摘要： A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the whole area in the ion implanted layer; performing heat treatment of the silicon wafer after implanting boron ions, thereby forming a thinning-stopper layer including a mixture of silicon particles, silicon oxides, and boron, and forming an active layer in the silicon wafer on the surface side of the thinning-stopper layer; and forming an epitaxial layer on the surface of the silicon wafer after the heat treatment.

摘要翻译： 一种制造外延晶片的方法，包括：从硅晶片的表面注入氧离子，从而在所述硅晶片的表面层中形成离子注入层; 在形成离子注入层之后，将硼离子从硅晶片的表面注入离子注入层中的整个区域; 在硼离子注入后对硅晶片进行热处理，从而形成包含硅颗粒，氧化硅和硼的混合物的减薄 - 阻挡层，并在薄晶片表面侧的硅晶片中形成有源层 层; 以及在热处理之后在硅晶片的表面上形成外延层。

公开(公告)号：US20080248630A1

公开(公告)日：2008-10-09

申请号：US12057896

申请日：2008-03-28

申请人： Akihiko ENDO ,  Nobuyuki MORIMOTO

发明人： Akihiko ENDO ,  Nobuyuki MORIMOTO

IPC分类号： H01L21/30

CPC分类号： H01L21/76243 ,  H01L21/76251

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括通过在有源层晶片中注入氧离子来形成基板电阻率为1至100mOmegacm的有源层晶片中的氧离子注入层，直接或通过绝缘层与基底晶片和有源层晶片接合以形成 接合晶片，对接合的晶片进行热处理，以加强结合，并将氧离子注入层转换成活性层晶片表面侧的停止层，研磨，抛光和/或蚀刻，粘结晶片 被加强以使接合晶片的表面上的停止层露出，去除停止层，并且在还原气氛下对已经去除了停止层的接合晶片进行热处理，以使包含在接合晶片中的导电组分扩散 有源层晶片。