摘要:
An optical information recording medium of the present invention includes at least one information layer. The information layer includes a first protective film, a first interface film, a recording film having the optical characteristics that are changed reversibly by laser beam irradiation, a second interface film, a second protective film, and a reflective film, present in the indicated order from the laser beam incident side. The first interface film includes an oxide of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Si. The second interface film includes carbon or a carbide of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Si.
摘要:
An optical information recording medium of the invention has at least two information layers. A first information layer (100) disposed at the front side (viewed from a laser incident side) includes at least a reflection layer (3), a recording layer (6) disposed at the laser incident side with respect to the reflection layer (3), for generating a reversible change between an amorphous phase and a crystalline phase that can be detected optically by applying a laser beam, and a dielectric layer (50) disposed between the reflection layer (3) and the recording layer (6). The dielectric layer (50) contains at least Zr, Si and Cr, a ratio of Zr, Si and Cr of the dielectric layer (50) at the reflection layer side is expressed as Zr:Si:Cr=p:q:r (p+q+r=100), a ratio of Zr, Si and Cr of the dielectric layer (50) in the vicinity of the interface at the recording layer side is expressed as Zr:Si:Cr=s:t:u (s+t+u=100), and r
摘要翻译:本发明的光信息记录介质具有至少两个信息层。 设置在前侧(从激光入射侧观察)的第一信息层(100)至少包括反射层(3),设置在相对于反射层(3)的激光入射侧的记录层(6) ),用于通过施加激光束在可以被光学检测的非晶相和结晶相之间产生可逆变化,以及设置在反射层(3)和记录层(6)之间的介电层(50)。 电介质层(50)至少包含Zr,Si和Cr,反射层侧的介电层(50)的Zr,Si和Cr的比率表示为Zr:Si:Cr = p:q:r( p + q + r = 100),记录层侧的界面附近的电介质层(50)的Zr,Si和Cr的比率表示为Zr:Si:Cr = s:t:u( s + t + u = 100),r
摘要:
An information recording medium ensures high reliability and favorable overwrite cycle-ability even when an interface layer is not provided between a recording layer and a dielectric layer. The recording layer and the dielectric layers are formed on the surface of the substrate. In the recording layer, a phase change is generated between a crystal phase and an amorphous phase by irradiation of light or application of electric energy. The dielectric layers are oxide-fluoride-based material layers containing one or more oxides which each are an oxide of at least one element selected from a first group including only Ti, Zr, Cr, Hf, Nb, Ta, Cr and Si and one or more fluorides which each are a fluoride of at least one element selected from a second group including only La, Ce, Pr, Nd, Gd, Dy, Ho, Er and Yb.
摘要:
An information recording medium, 15 capable of recording information by irradiation of light or applying electrical energy, wherein at least one of first and second dielectric layers 102, 106, first interface layer and counter-incident side interface layer 103, 105 is formed from a Si—In—Zr/Hf—O-based material containing at least Si, In, M1 (M1 represents at least one element selected from among Zr and Hf) and oxygen (O), with Si content being 1 atomic % or more. This medium has high recording sensitivity when information is recorded thereon, high overwrite cycle-ability and high signal intensity.
摘要:
An information recording medium of the present invention includes recording layers 19 and 26 whose phase can change by an optical or an electrical system so as to be detectable, and interface layers 18, 20, 25 and 27, which are in contact with the recording layers 19 and 26, to serve as oxide layers. The recording layer 19 contains a Ge—Bi—Te—M material represented by a formula: GeαBiβTeγM100-α-β-γ (atom %), where M denotes at least one element selected from Al, Ga, In and Mn, and α, β and γ satisfy 25≦α≦60, 0
摘要:
An information recording medium, 15 capable of recording information by irradiation of light or applying electrical energy, wherein at least one of first and second dielectric layers 102, 106, first interface layer and counter-incident side interface layer 103, 105 is formed from a Si—In—Zr/Hf—O-based material containing at least Si, In, M1 (M1 represents at least one element selected from among Zr and Hf) and oxygen (O), with Si content being 1 atomic % or more. This medium has high recording sensitivity when information is recorded thereon, high overwrite cycle-ability and high signal intensity.
摘要:
An information recording medium of the present invention includes recording layers 19 and 26 whose phase can change by an optical or an electrical system so as to be detectable, and interface layers 18, 20, 25 and 27, which are in contact with the recording layers 19 and 26, to serve as oxide layers. The recording layer 19 contains a Ge—Bi—Te-M material represented by a formula: GeαBiβTeγM100-α-β-γ (atom %), where M denotes at least one element selected from Al, Ga, In and Mn, and α, β and γ satisfy 25≦α≦60, 0
摘要:
In each of at least two information layers (1, 2) which constitute a information recording medium having a plurality of information layers on its one side, the compositions of the recording layer (7) and the dielectric layers (6, 8) adjacent to the recording layer (7) in one information layer (1) are common to the compositions of the corresponding layers (12, 11, 13) in the other information layer, so that the recording layers (7, 12) and the dielectric layers (6, 11) and (8, 13) in the two information layers (1, 2) can be formed in common sputtering film-forming chambers without the replacement of targets, which makes it possible to produce a multi-layer single-sided recording medium with a decreased time loss in the production process.
摘要:
In each of at least two information layers (1, 2) which constitute a information recording medium having a plurality of information layers on its one side, the compositions of the recording layer (7) and the dielectric layers (6, 8) adjacent to the recording layer (7) in one information layer (1) are common to the compositions of the corresponding layers (12, 11, 13) in the other information layer, so that the recording layers (7, 12) and the dielectric layers (6, 11) and (8, 13) in the two information layers (1, 2) can be formed in common sputtering firm-forming chambers without the replacement of targets, which makes it possible to produce a multi-layer single-sided recording medium with a decreased time loss in the production.
摘要:
The present invention provides an optical information recording medium of excellent signal quality in high density recording onto a semitransparent information layer, its manufacturing method and a manufacturing apparatus. The optical information recording medium of the present invention includes at least a semitransparent information layer disposed between a circular transparent substrate and a protective substrate, in which the information layer has spiral grooves for guiding a light beam, and also includes a recording film capable of recording/reproducing information thereon/therefrom by changing at least in two states detectable optically by irradiation of the light beam from the transparent substrate side, and the difference in film thickness of slope portions of the inner circumferential side and outer circumferential side of the groove is within ±10% in the entire region for recording/reproducing information.