公开(公告)号：US09093648B2

公开(公告)日：2015-07-28

申请号：US13380608

申请日：2010-06-03

申请人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

发明人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

IPC分类号： H01L29/18 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32

CPC分类号： H01L51/0013 ,  C23C14/048 ,  H01L27/3211 ,  H01L27/3246 ,  H01L2251/558

摘要： An anode 2 is formed on an element substrate 1. By using a film-forming solution containing a stacking material that forms an organic layer 43, a film is formed on a donor substrate 10 to pattern a transfer layer 11, thereby fabricating a transfer substrate 12. The transfer substrate 12 and the element substrate 1 are placed so as to face each other with spacers 13 interposed therebetween, such that the surface of the transfer substrate 12, which has the transfer layer 11 formed thereon, faces the element substrate 1 having the anode 2 formed thereon. The transfer substrate 12 and the element substrate 1 facing each other are held under vacuum conditions. The transfer substrate 12 is heated by a heat source 15 under the vacuum conditions to transfer the transfer layer 11 to the element substrate 1.

摘要翻译： 阳极2形成在元件基板1上。通过使用含有形成有机层43的层叠材料的成膜溶液，在供体基板10上形成膜以对转印层11进行图案化，从而制造转印基板 转印基板12和元件基板1以相互间隔开的间隔物13相对配置，使得其上形成有转印层11的转印基板12的表面面向元件基板1，元件基板1具有 形成在其上的阳极2。 转印基板12和彼此面对的元件基板1保持在真空条件下。 转印基板12在真空条件下由热源15加热，以将转印层11转印到元件基板1上。

公开(公告)号：US20120098420A1

公开(公告)日：2012-04-26

申请号：US13380599

申请日：2010-06-03

申请人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

发明人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

IPC分类号： H05B33/14 ,  H01J9/02

CPC分类号： H01L51/0013 ,  H01L27/3211 ,  H01L27/3246

摘要： An anode 2 is formed on an element substrate 1. By using a film-forming solution containing a stacking material that forms an organic layer 43, a film is formed on a donor substrate 10 to form a transfer layer 11, thereby fabricating a transfer substrate 12. The transfer substrate 12 and the element substrate 1 are placed so as to face each other with spacers 13 interposed therebetween, such that the surface of the transfer substrate 12, which has the transfer layer 11 formed thereon, faces the element substrate 1 having the anode 2 formed thereon. The transfer substrate 12 and the element substrate 1 facing each other are held under vacuum conditions. The transfer substrate 12 is heated by the heat source 15 under the vacuum conditions to transfer the transfer layer 11 to the element substrate 1.

摘要翻译： 阳极2形成在元件基板1上。通过使用含有形成有机层43的层叠材料的成膜溶液，在供体基板10上形成膜以形成转印层11，从而制造转印基板 转印基板12和元件基板1以相互间隔开的间隔物13相对配置，使得其上形成有转印层11的转印基板12的表面面向元件基板1，元件基板1具有 形成在其上的阳极2。 转印基板12和彼此面对的元件基板1保持在真空条件下。 转印基板12在真空条件下被热源15加热，以将转印层11转印到元件基板1上。

公开(公告)号：US20120086330A1

公开(公告)日：2012-04-12

申请号：US13378032

申请日：2010-06-01

申请人： Tokiyoshi Umeda ,  Tohru Sonoda ,  Hideki Uchida

发明人： Tokiyoshi Umeda ,  Tohru Sonoda ,  Hideki Uchida

IPC分类号： H01L51/52 ,  B05D5/00 ,  B05D3/06 ,  H01L51/56

CPC分类号： H01L51/0013 ,  H01L27/3211 ,  H01L51/5265 ,  H01L51/56 ,  H01L2251/5353

摘要： A formation method of an organic layer (13) includes a transfer process of forming the organic layer (13) by superposing a donor substrate (30) having a light heat converting layer (32) and a transfer layer (34) formed sequentially to cover at least regions corresponding to organic layer formation regions on a support plate (31) and a transfer mask (40) having openings corresponding to the organic layer formation regions, on each other so that the transfer layer-side surface of the donor substrate (30) comes into contact with the transfer mask (40), and, with the resultant structure placed above a transfer target substrate (20) so that the transfer mask (40) is on the lower side, transferring the transfer layer (34) onto the transfer target substrate (20) via the openings of the transfer mask (40).

摘要翻译： 有机层（13）的形成方法包括通过叠加具有光热转换层（32）的施主基板（30）和顺序形成的转印层（34）来形成有机层（13）的转印工艺，以覆盖 至少对应于支撑板（31）上的有机层形成区域的区域和具有与有机层形成区域相对应的开口的转印掩模（40），使得施主衬底（30）的转印层侧表面 ）与转印掩模（40）接触，并且将所得结构放置在转印目标基板（20）的上方，使得转印掩模（40）位于下侧，将转印层（34）转印到 通过转印掩模（40）的开口转印目标衬底（20）。

公开(公告)号：US08651912B2

公开(公告)日：2014-02-18

申请号：US13380599

申请日：2010-06-03

申请人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

发明人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

IPC分类号： H01J9/02

CPC分类号： H01L51/0013 ,  H01L27/3211 ,  H01L27/3246

摘要： An anode 2 is formed on an element substrate 1. By using a film-forming solution containing a stacking material that forms an organic layer 43, a film is formed on a donor substrate 10 to form a transfer layer 11, thereby fabricating a transfer substrate 12. The transfer substrate 12 and the element substrate 1 are placed so as to face each other with spacers 13 interposed therebetween, such that the surface of the transfer substrate 12, which has the transfer layer 11 formed thereon, faces the element substrate 1 having the anode 2 formed thereon. The transfer substrate 12 and the element substrate 1 facing each other are held under vacuum conditions. The transfer substrate 12 is heated by the heat source 15 under the vacuum conditions to transfer the transfer layer 11 to the element substrate 1.

摘要翻译： 阳极2形成在元件基板1上。通过使用含有形成有机层43的层叠材料的成膜溶液，在供体基板10上形成膜以形成转印层11，从而制造转印基板 转印基板12和元件基板1以相互间隔开的间隔物13相对配置，使得其上形成有转印层11的转印基板12的表面面向元件基板1，元件基板1具有 形成在其上的阳极2。 转印基板12和彼此面对的元件基板1保持在真空条件下。 转印基板12在真空条件下被热源15加热，以将转印层11转印到元件基板1上。

公开(公告)号：US20120091482A1

公开(公告)日：2012-04-19

申请号：US13380608

申请日：2010-06-03

申请人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

发明人： Hideki Uchida ,  Tokiyoshi Umeda ,  Tohru Sonoda

IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L51/0013 ,  C23C14/048 ,  H01L27/3211 ,  H01L27/3246 ,  H01L2251/558

摘要： An anode 2 is formed on an element substrate 1. By using a film-forming solution containing a stacking material that forms an organic layer 43, a film is formed on a donor substrate 10 to pattern a transfer layer 11, thereby fabricating a transfer substrate 12. The transfer substrate 12 and the element substrate 1 are placed so as to face each other with spacers 13 interposed therebetween, such that the surface of the transfer substrate 12, which has the transfer layer 11 formed thereon, faces the element substrate 1 having the anode 2 formed thereon. The transfer substrate 12 and the element substrate 1 facing each other are held under vacuum conditions. The transfer substrate 12 is heated by a heat source 15 under the vacuum conditions to transfer the transfer layer 11 to the element substrate 1.

摘要翻译： 阳极2形成在元件基板1上。通过使用含有形成有机层43的层叠材料的成膜溶液，在供体基板10上形成膜以对转印层11进行图案化，从而制造转印基板 转印基板12和元件基板1以相互间隔开的间隔物13相对配置，使得其上形成有转印层11的转印基板12的表面面向元件基板1，元件基板1具有 形成在其上的阳极2。 转印基板12和彼此面对的元件基板1保持在真空条件下。 转印基板12在真空条件下由热源15加热，以将转印层11转印到元件基板1上。

公开(公告)号：US08535108B2

公开(公告)日：2013-09-17

申请号：US13378032

申请日：2010-06-01

申请人： Tokiyoshi Umeda ,  Tohru Sonoda ,  Hideki Uchida

发明人： Tokiyoshi Umeda ,  Tohru Sonoda ,  Hideki Uchida

IPC分类号： H01L51/56

CPC分类号： H01L51/0013 ,  H01L27/3211 ,  H01L51/5265 ,  H01L51/56 ,  H01L2251/5353

摘要： A formation method of an organic layer (13) includes a transfer process of forming the organic layer (13) by superposing a donor substrate (30) having a light heat converting layer (32) and a transfer layer (34) formed sequentially to cover at least regions corresponding to organic layer formation regions on a support plate (31) and a transfer mask (40) having openings corresponding to the organic layer formation regions, on each other so that the transfer layer-side surface of the donor substrate (30) comes into contact with the transfer mask (40), and, with the resultant structure placed above a transfer target substrate (20) so that the transfer mask (40) is on the lower side, transferring the transfer layer (34) onto the transfer target substrate (20) via the openings of the transfer mask (40).

摘要翻译： 有机层（13）的形成方法包括通过叠加具有光热转换层（32）的施主基板（30）和顺序形成的转印层（34）来形成有机层（13）的转印工艺，以覆盖 至少对应于支撑板（31）上的有机层形成区域的区域和具有与有机层形成区域相对应的开口的转印掩模（40），使得施主衬底（30）的转印层侧表面 ）与转印掩模（40）接触，并且将所得结构放置在转印目标基板（20）的上方，使得转印掩模（40）位于下侧，将转印层（34）转印到 通过转印掩模（40）的开口转印目标衬底（20）。

公开(公告)号：US08410476B2

公开(公告)日：2013-04-02

申请号：US12679945

申请日：2008-08-01

申请人： Emi Yamamoto ,  Kazuya Ishida ,  Hideki Uchida ,  Takeshi Hirase ,  Tohru Sonoda ,  Yuhki Kobayashi

发明人： Emi Yamamoto ,  Kazuya Ishida ,  Hideki Uchida ,  Takeshi Hirase ,  Tohru Sonoda ,  Yuhki Kobayashi

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3283 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/004 ,  H01L51/0059 ,  H01L51/0078

摘要： The present invention provides an organic electroluminescent display device including an electroluminescent element with a reduced leakage current and also provides a production method thereof. The present invention is an organic electroluminescent display device including an electroluminescent element, the electroluminescent element comprising a lower electrode, an organic layer, a light-emitting layer, and an upper electrode, stacked one above the other on and above a substrate in this order, wherein the organic electroluminescent display device further includes a bank formed on the organic layer.

摘要翻译： 本发明提供了一种包括具有减小的漏电流的电致发光元件的有机电致发光显示装置，并且还提供了其制造方法。 本发明是一种有机电致发光显示装置，其包括电致发光元件，该电致发光元件包括下电极，有机层，发光层和上电极，以此顺序层叠在基板上和上方 其中所述有机电致发光显示装置还包括形成在所述有机层上的堤。

公开(公告)号：US20100213449A1

公开(公告)日：2010-08-26

申请号：US12679945

申请日：2008-08-01

申请人： Emi Yamamoto ,  Kazuya Ishida ,  Hideki Uchida ,  Takeshi Hirase ,  Tohru Sonoda ,  Yuhki Kobayashi

发明人： Emi Yamamoto ,  Kazuya Ishida ,  Hideki Uchida ,  Takeshi Hirase ,  Tohru Sonoda ,  Yuhki Kobayashi

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3283 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/004 ,  H01L51/0059 ,  H01L51/0078

摘要： The present invention provides an organic electroluminescent display device including an electroluminescent element with a reduced leakage current and also provides a production method thereof. The present invention is an organic electroluminescent display device including an electroluminescent element, the electroluminescent element comprising a lower electrode, an organic layer, a light-emitting layer, and an upper electrode, stacked one above the other on and above a substrate in this order, wherein the organic electroluminescent display device further includes a bank formed on the organic layer.

摘要翻译： 本发明提供了一种包括具有减小的漏电流的电致发光元件的有机电致发光显示装置，并且还提供了其制造方法。 本发明是一种有机电致发光显示装置，其包括电致发光元件，该电致发光元件包括下电极，有机层，发光层和上电极，以此顺序层叠在基板上和上方 其中所述有机电致发光显示装置还包括形成在所述有机层上的堤。

公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。