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1.发明授权公开(公告)号：US06593235B2
公开(公告)日：2003-07-15
申请号：US10125954
申请日：2002-04-18
IPC分类号： H01L2144
CPC分类号： H01L29/66757 , H01L21/76804 , H01L23/5283 , H01L23/5329 , H01L29/41733 , H01L29/42384 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second insulating film is varied during the deposition so that the etching rate of the second insulating film increases from a lower portion toward an upper portion. Thereby, a contact hole which is formed by etching through the first and second insulating films has a tapered configuration to improve a reliability of a connection made therein.
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2.发明授权公开(公告)号：US06396078B1
公开(公告)日：2002-05-28
申请号：US08666104
申请日：1996-06-19
IPC分类号： H01L2976
CPC分类号： H01L29/66757 , H01L21/76804 , H01L23/5283 , H01L23/5329 , H01L29/41733 , H01L29/42384 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second insulating film is varied during the deposition so that the etching rate of the second insulating film increases from a lower portion toward an upper portion. Thereby, a contact hole which is formed by etching through the first and second insulating films has a tapered configuration to improve a reliability of a connection made therein.
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公开(公告)号：US20110034215A1
公开(公告)日：2011-02-10
申请号：US12910150
申请日：2010-10-22
IPC分类号： H04M1/02
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。
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公开(公告)号：US20060267114A1
公开(公告)日：2006-11-30
申请号：US11418717
申请日：2006-05-05
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
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公开(公告)号：US07064388B2
公开(公告)日：2006-06-20
申请号：US11025344
申请日：2004-12-28
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
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公开(公告)号：US08610182B2
公开(公告)日：2013-12-17
申请号：US13440200
申请日：2012-04-05
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
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公开(公告)号：US08154059B2
公开(公告)日：2012-04-10
申请号：US12910150
申请日：2010-10-22
IPC分类号： H01L29/80 , H01L21/00 , H01L21/338 , H01L21/31
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。
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公开(公告)号：US06858898B1
公开(公告)日：2005-02-22
申请号：US09532915
申请日：2000-03-22
IPC分类号： H01L21/00 , H01L21/20 , H01L21/77 , H01L27/01 , H01L27/12 , H01L29/786 , H01L31/0392
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。
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公开(公告)号：US07821071B2
公开(公告)日：2010-10-26
申请号：US12399573
申请日：2009-03-06
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。
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公开(公告)号：US20090224260A1
公开(公告)日：2009-09-10
申请号：US12399573
申请日：2009-03-06
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。
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