公开(公告)号：US5063449A

公开(公告)日：1991-11-05

申请号：US437260

申请日：1989-11-16

申请人： Hidenori Shibata ,  Ikuko Inoue ,  Nozomu Harada

发明人： Hidenori Shibata ,  Ikuko Inoue ,  Nozomu Harada

IPC分类号： H01L27/148

CPC分类号： H01L27/14831

摘要： A solid-state image sensor comprises signal charge storage diodes formed in a semiconductor substrate, a plurality of signal charge read-out sections formed adjacent to the signal charge storage diodes on the semiconductor substrate, a plurality of signal charge transfer sections formed close to the signal charge read-out sections on the semiconductor substrate, pixel electrodes electrically coupled to the signal charge storage diodes, and a plurality of bias-charge injecting gates and bias-charge injecting diodes, which are provided adjacent to the signal charge transfer sections to inject bias charges into the signal charge storage diodes via the signal charge read-out sections.

摘要翻译： 固态图像传感器包括形成在半导体衬底中的信号电荷存储二极管，与半导体衬底上的信号电荷存储二极管相邻形成的多个信号电荷读出部分，多个信号电荷转移部分， 半导体衬底上的信号电荷读出部分，电耦合到信号电荷存储二极管的像素电极以及多个偏置电荷注入栅极和偏置电荷注入二极管，这些偏置电荷注入栅极和偏置电荷注入二极管邻近于信号电荷转移部分而被注入 通过信号电荷读出部分对信号电荷存储二极管进行偏置电荷。

公开(公告)号：US20060163684A1

公开(公告)日：2006-07-27

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06690423B1

公开(公告)日：2004-02-10

申请号：US09272337

申请日：1999-03-19

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US07456889B2

公开(公告)日：2008-11-25

申请号：US11251825

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hiroshige Goto

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device has an imaging region in which unit cells, each of which includes a photoelectric conversion section and a signal scanning circuit section, are disposed on a semiconductor substrate in a two-dimensional manner. The signal scanning circuit section is composed of a plurality of transistors. At least part of a gate contact of each transistor in the signal scanning circuit section is formed on an active region of each transistor.

摘要翻译： 固态成像装置具有成像区域，其中包括光电转换部分和信号扫描电路部分的单元电池以二维方式设置在半导体衬底上。 信号扫描电路部分由多个晶体管构成。 信号扫描电路部分中的每个晶体管的栅极接触的至少一部分形成在每个晶体管的有源区上。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US06987537B2

公开(公告)日：2006-01-17

申请号：US09824774

申请日：2001-04-04

申请人： Ikuko Inoue

发明人： Ikuko Inoue

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14692

摘要： The image pickup system includes: MOS sensors arranged in an image pickup region of a semiconductor substrate in the form of a matrix and having photoelectric transfer layers; a peripheral circuit part formed in a region of the semiconductor substrate except for the image pickup region and having a driving circuit for driving the MOS sensors and a signal processing circuit for processing output signals from the MOS sensors; and microlenses, formed on the photoelectric transfer layers via a first insulating film, for condensing picture signals on the photoelectric transfer layers, wherein the driving circuit and the signal processing circuit in the peripheral circuit part are covered by a second insulating film, and the distance between the surface of the first insulating film and the semiconductor substrate is shorter than the distance between the surface of a second insulating film and the semiconductor substrate.

摘要翻译： 图像拾取系统包括：MOS传感器，布置在矩阵形式的半导体衬底的摄像区域中并具有光电转移层; 外围电路部分形成在除了摄像区域之外的半导体衬底的区域中并且具有用于驱动MOS传感器的驱动电路和用于处理来自MOS传感器的输出信号的信号处理电路; 和微透镜，其经由第一绝缘膜形成在光电转移层上，用于聚集光电转移层上的图像信号，其中外围电路部分中的驱动电路和信号处理电路被第二绝缘膜覆盖，并且距离 在第一绝缘膜的表面和半导体衬底之间的距离比第二绝缘膜的表面和半导体衬底之间的距离短。

公开(公告)号：US06271554B1

公开(公告)日：2001-08-07

申请号：US09110074

申请日：1998-07-02

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。