公开(公告)号：US06194244B1

公开(公告)日：2001-02-27

申请号：US09109061

申请日：1998-07-02

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

IPC分类号： H01L2100

CPC分类号： H01L27/14601 ,  H01L27/14689

摘要： The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分，其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线，其中各个光电转换部分通过至少两次离子注入形成。

公开(公告)号：US6072206A

公开(公告)日：2000-06-06

申请号：US272339

申请日：1999-03-19

申请人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

发明人： Hirofumi Yamashita ,  Ikuko Inoue ,  Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hidetoshi Nozaki

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

摘要： The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.

摘要翻译： 本发明提供了一种固态图像传感器，其构造方式是，即使晶体管的阱的杂质浓度增加，结漏电流也不增加，因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外，作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。

公开(公告)号：US06441411B2

公开(公告)日：2002-08-27

申请号：US09728123

申请日：2000-12-04

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06690423B1

公开(公告)日：2004-02-10

申请号：US09272337

申请日：1999-03-19

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06271554B1

公开(公告)日：2001-08-07

申请号：US09110074

申请日：1998-07-02

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US20060163684A1

公开(公告)日：2006-07-27

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

公开(公告)号：US06344670B2

公开(公告)日：2002-02-05

申请号：US09755117

申请日：2001-01-08

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Hidetoshi Nozaki ,  Ikuko Inoue

IPC分类号： H01L31062

CPC分类号： H01L27/14601 ,  H01L27/14689

摘要： The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least two ion implantations.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分，其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线，其中各个光电转换部分由至少两个离子注入形成。

公开(公告)号：US06211509B1

公开(公告)日：2001-04-03

申请号：US09280722

申请日：1999-03-30

申请人： Ikuko Inoue ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi ,  Hidetoshi Nozaki ,  Hisanori Ihara

发明人： Ikuko Inoue ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi ,  Hidetoshi Nozaki ,  Hisanori Ihara

IPC分类号： H01L2700

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14632 ,  H01L31/02325

摘要： A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state.

摘要翻译： MOS型固态图像传感器具有以矩阵形式布置在p型Si衬底上的多个像素单元。 每个像素单元具有包括光电二极管的光电转换部分和包括放大MOS晶体管的信号提取部分。 用于隔离像素单元的每个元件隔离区域具有形成在基板上的场氧化膜和形成在氧化膜正下方的基板层中的p型扩散层，以具有比基板层更高的载流子杂质浓度。 每个元件隔离区域的底部位于比平衡状态从光电二极管的p-n结延伸到衬底的耗尽层的底部更深的位置。