公开(公告)号：US06635912B2

公开(公告)日：2003-10-21

申请号：US09947343

申请日：2001-09-07

申请人： Hiroaki Ohkubo

发明人： Hiroaki Ohkubo

IPC分类号： H01L27146

CPC分类号： H01L27/14609 ,  H01L27/14623 ,  H01L27/14692

摘要： A CMOS image sensor and a manufacturing method thereof are disclosed, by which the sensitivity characteristics of the photodiode and the operation characteristics of the MOS transistor are improved and easy and low-cost manufacturing is realized. The CMOS image sensor comprises a photodiode having a light reception surface covered by a multi-layered antireflection film which is formed by alternately depositing two or more kinds of insulating films whose refractive indexes are different; and at least one MOS transistor having diffusion layers which respectively function as source and drain areas, wherein a silicide layer is formed on each diffusion layer. The photodiode and the MOS transistor are provided on a common substrate and are electrically connected with each other.

公开(公告)号：US06624456B2

公开(公告)日：2003-09-23

申请号：US09792634

申请日：2001-02-23

申请人： Eric R. Fossum ,  Sandor L. Barna

发明人： Eric R. Fossum ,  Sandor L. Barna

IPC分类号： H01L27146

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/14623

摘要： A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion.

摘要翻译： 帧快门式设备提供存储节点所位于的分离井。 存储节点也被遮光罩屏蔽，以防止光电转换。

公开(公告)号：US06452151B1

公开(公告)日：2002-09-17

申请号：US09625722

申请日：2000-07-26

申请人： Toshimitsu Tamagawa

发明人： Toshimitsu Tamagawa

IPC分类号： H01L27146

CPC分类号： H04N5/2176

摘要： An image-sensing semiconductor device has, in addition to a plurality of photodiodes, a dummy photodiode. The dummy photodiode is fed with a bias repeatedly with a predetermined period, and the plurality of photodiodes are fed with a bias sequentially with a predetermined cycle. The differences between the individual output signals of the plurality of photodiodes and the output signal of the dummy photodiode are calculated sequentially by a differential amplifier.

摘要翻译： 除了多个光电二极管之外，图像感测半导体器件还具有虚拟光电二极管。 虚拟光电二极管以预定的周期重复地馈送偏置，并且多个光电二极管以预定的周期依次馈送偏压。 多个光电二极管的各个输出信号与虚拟光电二极管的输出信号之间的差别由差分放大器依次计算。

公开(公告)号：US06437340B1

公开(公告)日：2002-08-20

申请号：US09665812

申请日：2000-09-20

申请人： Klaus Finkler ,  Kurt Grapengeter ,  Thomas Schirl ,  Reiner F. Schulz ,  Reiner Staab

发明人： Klaus Finkler ,  Kurt Grapengeter ,  Thomas Schirl ,  Reiner F. Schulz ,  Reiner Staab

IPC分类号： H01L27146

CPC分类号： H04N5/361 ,  G01T1/2928 ,  H01L27/14643 ,  H01L27/14658 ,  H01L31/115 ,  H04N5/32

摘要： A planar image detector for electromagnetic radiation has radiation-sensitive pixel elements arranged in a matrix that has a surface with active pixels for imaging and a surface with correction pixels, not exposed to the radiation for generating correction signals, and with contact surfaces next to the surfaces with the pixels. The surface with the correction pixels is arranged in a different plane from the surface with the active pixels and at one of the sides of the image detector with the contact surfaces of the active pixels.

摘要翻译： 用于电磁辐射的平面图像检测器具有布置成矩阵的辐射敏感像素元件，其具有用于成像的有源像素的表面和具有校正像素的表面，而不暴露于用于产生校正信号的辐射，以及接触表面 具有像素的表面。 具有校正像素的表面被布置在与有源像素的表面和图像检测器的一侧的有源像素的接触表面的不同平面中。

公开(公告)号：US06271554B1

公开(公告)日：2001-08-07

申请号：US09110074

申请日：1998-07-02

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US06441411B2

公开(公告)日：2002-08-27

申请号：US09728123

申请日：2000-12-04

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US06388242B1

公开(公告)日：2002-05-14

申请号：US09418961

申请日：1999-10-14

申请人： Nikolai E. Bock

发明人： Nikolai E. Bock

IPC分类号： H01L27146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H04N5/35518 ,  H04N5/3741

摘要： Reduced size CMOS active pixel circuit uses special transistors with their gates and sources connected together. This transistor is placed at the top of the pixel.

摘要翻译： 尺寸减小的CMOS有源像素电路使用特殊晶体管，其栅极和源极连接在一起。 该晶体管被放置在像素的顶部。

公开(公告)号：US06353240B2

公开(公告)日：2002-03-05

申请号：US09324555

申请日：1999-06-02

申请人： Cheng-Hung Chien ,  Chih-Hua Lee

发明人： Cheng-Hung Chien ,  Chih-Hua Lee

IPC分类号： H01L27146

CPC分类号： H01L31/113 ,  H01L27/14609

摘要： A CMOS sensor. The CMOS sensor comprises a substrate, a gate electrode formed on the substrate, a source/drain region formed in the substrate on one side of the gate electrode, and a sensor region formed in the substrate on another side of the gate electrode. The impurity in the source/drain region is arsenic. The source/drain further comprises a lightly doped drain region. The sensor region comprises a first doped region and a second doped region which together have a dentoid profile. The impurity in the first doped region and the second doped region is phosphorus.

摘要翻译： CMOS传感器。 CMOS传感器包括基板，形成在基板上的栅极电极，形成在栅电极一侧的基板中的源极/漏极区域和形成在栅电极另一侧的基板中的传感器区域。 源极/漏极区域中的杂质是砷。 源极/漏极还包括轻掺杂漏极区域。 传感器区域包括一起具有齿状轮廓的第一掺杂区域和第二掺杂区域。 第一掺杂区和第二掺杂区中的杂质是磷。

公开(公告)号：US06248991B1

公开(公告)日：2001-06-19

申请号：US09223165

申请日：1998-12-30

申请人： Zhiliang Julian Chen ,  Eugene G. Dierschke

发明人： Zhiliang Julian Chen ,  Eugene G. Dierschke

IPC分类号： H01L27146

CPC分类号： H04N5/3658 ,  H04N5/3575 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378 ,  H04N2209/00

摘要： A CMOS area array sensor with reduced fixed pattern noise. Device threshold voltage variations are minimied using a Sequential Correlated Double Sampling technique in a column circuitry.

摘要翻译： CMOS区域阵列传感器具有降低的固定图案噪声。 使用列电路中的顺序相关双采样技术来降低器件阈值电压变化。

公开(公告)号：US06169286A

公开(公告)日：2001-01-02

申请号：US09000484

申请日：1998-07-21

申请人： Surendra Pal Singh

发明人： Surendra Pal Singh

IPC分类号： H01L27146

CPC分类号： H01L27/146

摘要： A method and apparatus of operating a dual gate TFT electromagnetic radiation imaging device wherein the electrical conditions on each pixel are compared after exposure to radiation and during measurement. The pixel charge electrode is preset to a predetermined voltage level prior to radiation exposure so that the pixel may be operated beyond its linear operating range.

摘要翻译： 一种操作双栅极TFT电磁辐射成像装置的方法和装置，其中在暴露于辐射和测量之间比较每个像素上的电气条件。 像素充电电极在辐射曝光之前预设为预定的电压电平，使得像素可以在其线性工作范围之外被操作。