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    RESIN COMPOSITION FOR LASER ENGRAVING, RELIEF PRINTING PLATE PRECURSOR FOR LASER ENGRAVING AND PROCESS FOR PRODUCING SAME, AND PROCESS FOR MAKING RELIEF PRINTING PLATE
    2.
    发明申请
    RESIN COMPOSITION FOR LASER ENGRAVING, RELIEF PRINTING PLATE PRECURSOR FOR LASER ENGRAVING AND PROCESS FOR PRODUCING SAME, AND PROCESS FOR MAKING RELIEF PRINTING PLATE 失效
    用于激光雕刻的树脂组合物，用于激光雕刻的缓冲印刷板前驱体和用于生产它们的方法以及用于制备可靠印刷板的方法

    公开(公告)号：US20110319563A1

    公开(公告)日：2011-12-29

    申请号：US13169636

    申请日：2011-06-27

    申请人： Katsuhiro YAMASHITA

    发明人： Katsuhiro YAMASHITA

    IPC分类号： C08F116/06 ,  C08G77/04 ,  B41C1/00 ,  C09K3/00

    CPC分类号： B41C1/05 ,  B41N1/12

    摘要： A resin composition is provided that includes two or more types of compounds selected from the group consisting of (Component A) a compound comprising a silicon atom having a total of one or two alkoxy and hydroxy groups, (Component B) a compound comprising a silicon atom having a total of three alkoxy and hydroxy groups, and (Component C) a compound comprising a silicon atom having a total of four alkoxy and hydroxy groups. There are also provided a relief printing plate precursor that includes a relief-forming layer formed from the resin composition, a process for producing a relief printing plate precursor that includes a layer formation step of forming a relief-forming layer from the resin composition and a crosslinking step of thermally crosslinking the relief-forming layer so as to form a crosslinked relief-forming layer.

    摘要翻译： 提供一种树脂组合物，其包含两种或更多种选自（组分A）包含总共一个或两个烷氧基和羟基的硅原子的化合物的组分（组分B）包含硅的化合物 具有总共三个烷氧基和羟基的原子，和（组分C）包含总共四个烷氧基和羟基的硅原子的化合物。 还提供了一种凸版印刷版原版，其包括由该树脂组合物形成的凸版形成层，一种凸版印刷版原版的制造方法，其包括从该树脂组合物形成凸版形成层的层形成步骤和 交联步骤，使交联形成层交联形成交联的浮雕形成层。

    POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
    3.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 有权
    正极性组合物和使用其的图案形成方法

    公开(公告)号：US20090111053A1

    公开(公告)日：2009-04-30

    申请号：US12257646

    申请日：2008-10-24

    申请人： Katsuhiro YAMASHITA

    发明人： Katsuhiro YAMASHITA

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A positive resist composition for electron beam, X-ray or EUV exposure, including (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating a sulfonic acid upon irradiation with an actinic ray or radiation, wherein the resin (A) is a resin having a phenolic hydroxyl group and having a weight average molecular weight of 1,500 to 3,500, the positive resist composition has a property of decomposing by the action of an acid and causing the dissolution rate in an aqueous 2.38 wt % tetramethylammonium hydroxide solution at 23° C. under normal pressure to increase in a range of 200 to 5,000 times, and the positive resist composition has a solid content concentration of from 2.5 to 4.5 mass %.

    摘要翻译： 一种用于电子束，X射线或EUV曝光的正型抗蚀剂组合物，包括（A）能够通过酸的作用分解以提高在碱性显影剂中的溶解度的树脂; 和（B）能够在用光化射线或辐射照射时能够产生磺酸的化合物，其中树脂（A）是具有酚羟基并且重均分子量为1,500至3,500的树脂，正性抗蚀剂 组合物具有通过酸的作用分解的性质，并且在常压下在23℃下使2.38重量％四甲基氢氧化铵水溶液中的溶解速率增加到200-5000倍的范围，并且正性抗蚀剂组合物 固体成分浓度为2.5〜4.5质量％。

    PROCESS FOR PRODUCING FLEXOGRAPHIC PRINTING PLATE PRECURSOR FOR LASER ENGRAVING, FLEXOGRAPHIC PRINTING PLATE PRECURSOR FOR LASER ENGRAVING AND PROCESS FOR MAKING FLEXOGRAPHIC PRINTING PLATE
    4.
    发明申请
    PROCESS FOR PRODUCING FLEXOGRAPHIC PRINTING PLATE PRECURSOR FOR LASER ENGRAVING, FLEXOGRAPHIC PRINTING PLATE PRECURSOR FOR LASER ENGRAVING AND PROCESS FOR MAKING FLEXOGRAPHIC PRINTING PLATE 审中-公开
    用于激光雕刻的柔性印刷板前驱体的制造方法，用于激光雕刻的柔性印刷板前驱物和用于制造柔性印刷板的方法

    公开(公告)号：US20130049264A1

    公开(公告)日：2013-02-28

    申请号：US13599851

    申请日：2012-08-30

    申请人： Katsuhiro YAMASHITA ,  Yuusuke KOZAWA

    发明人： Katsuhiro YAMASHITA ,  Yuusuke KOZAWA

    IPC分类号： B05D3/02 ,  C08G61/04 ,  B29C59/16 ,  B05D7/24 ,  B32B37/12

    CPC分类号： B41C1/05 ,  B41N1/12

    摘要： Disclosed are a process for producing a flexographic printing plate precursor for laser engraving, the method comprising, in the following order: an applying step (1) of applying a composition comprising (Component A) a radical polymerizable compound and (Component B) a thermal radical polymerization initiator onto a support; and a curing step (2) of thermally curing the composition in an atmosphere in which an oxygen partial pressure is from 0.0001 atm to 0.1 atm, a flexographic printing plate precursor for laser engraving produced by the process; a process for making a flexographic printing plate; and a flexographic printing plate.

    摘要翻译： 公开了一种用于制造用于激光雕刻的柔性版印刷版前体的方法，该方法包括以下顺序：施加包含（组分A）可自由基聚合的化合物和（组分B）的组合物的涂布步骤（1） 自由基聚合引发剂在载体上; 和在氧分压为0.0001atm至0.1atm的气氛中热固化该组合物的固化步骤（2），通过该方法生产的用于激光雕刻的柔性版印刷版前体; 制造柔版印刷版的方法; 和柔版印刷版。

    LAYOUT DEVICE AND LAYOUT METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT
    5.
    发明申请
    LAYOUT DEVICE AND LAYOUT METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT 失效
    半导体集成电路的布局器件和布局方法

    公开(公告)号：US20110219347A1

    公开(公告)日：2011-09-08

    申请号：US13039955

    申请日：2011-03-03

    申请人： Sawako FUKUNAGA ,  Yuuki TAKAHASHI ,  Katsuhiro YAMASHITA

    发明人： Sawako FUKUNAGA ,  Yuuki TAKAHASHI ,  Katsuhiro YAMASHITA

    IPC分类号： G06F17/50

    CPC分类号： G06F17/50

    摘要： A layout method of a semiconductor integrated circuit includes five steps. The first step is of extracting a wiring crowding place where wiring lines are crowded as compared with a predetermined condition, after carrying out a routing in a region where a placement of circuit elements is carried out. The second step is of generating routing prohibition regions where a routing is prohibited in an area including the wiring crowding place. The third step is of carrying out a routing by bypassing the routing prohibition regions. The fourth step is of deleting the routing prohibition regions. The fifth step is of carrying out a re-routing. The generating step includes: calculating a size and an interval of the routing prohibition regions based on a rate for generating a routing prohibition region in the area in each wiring layer, and generating the routing prohibition regions in the area on the basis of the calculating result.

    摘要翻译： 半导体集成电路的布局方法包括五个步骤。 第一步是在执行电路元件放置的区域中进行路由之后，提取与预定条件相比布线线路挤满的地方。 第二步是生成路由禁止区域，其中路由被禁止在包括布线拥挤位置的区域中。 第三步是绕过路由禁​​止区域进行路由。 第四步是删除路由禁止区域。 第五步是进行重路由。 所述生成步骤包括：基于在所述布线层的所述区域中生成路由禁止区域的速率来计算所述路由禁止区域的大小和间隔，并且基于所述计算结果生成所述区域中的所述路由禁止区域 。

    POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME
    6.
    发明申请
    POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME 有权
    电子束，X射线或EUV的正电阻组合物和使用其的图案形成方法

    公开(公告)号：US20090246685A1

    公开(公告)日：2009-10-01

    申请号：US12410881

    申请日：2009-03-25

    申请人： Katsuhiro YAMASHITA

    发明人： Katsuhiro YAMASHITA

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/146

    摘要： Provided is a positive resist composition for an electron beam, an X-ray or EUV, including: (A) a resin capable of decomposing by the action of an acid to increase the dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the following formula (ZI) or (ZII); (C) a basic compound; and (D) an organic solvent, wherein a concentration of all solid contents in said composition is from 1.0 to 4.5 mass %, and a total amount of the compound represented by formula (ZI) or (ZII) is 12 mass % or more based on all solid contents in said composition: wherein symbols in the formulae are defined in the specification.

    摘要翻译： 本发明提供一种用于电子束，X射线或EUV的正型抗蚀剂组合物，其包括：（A）能够通过酸的作用分解以提高碱性水溶液中的溶解速率的树脂; （B）由下式（ZI）或（ZII）表示的能够用光化射线或辐射照射后能够产生酸的化合物。 （C）碱性化合物; 和（D）有机溶剂，其中所述组合物中所有固体含量的浓度为1.0〜4.5质量％，由式（ZI）或（ZII）表示的化合物的总量为12质量％以上 所述组合物中所有固体含量：其中式中的符号在说明书中定义。