公开(公告)号：US08345512B2

公开(公告)日：2013-01-01

申请号：US12062240

申请日：2008-04-03

申请人： Hideo Adachi ,  Katsuhiro Wakabayashi ,  Kosei Tamiya ,  Masaaki Amikura ,  Kazuya Matsumoto ,  Ryo Ohta ,  Mamoru Hasegawa ,  Hiroshi Ito

发明人： Hideo Adachi ,  Katsuhiro Wakabayashi ,  Kosei Tamiya ,  Masaaki Amikura ,  Kazuya Matsumoto ,  Ryo Ohta ,  Mamoru Hasegawa ,  Hiroshi Ito

IPC分类号： A61B8/00 ,  B06B1/02 ,  H01L41/09

CPC分类号： A61B8/00 ,  A61B8/12 ,  B06B1/0207 ,  B06B1/0292 ,  B06B2201/51 ,  G01N29/2406

摘要： A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate; a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT; a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal; and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.

摘要翻译： 一种电容微加工超声波换能器（cMUT）装置，包括：形成在半导体衬底上的cMUT; DC高电压产生单元，设置在半导体基板上，用于产生叠加在cMUT的驱动信号上的DC高电压信号; 驱动信号生成单元，其设置在所述半导体基板上，用于产生所述驱动信号; 以及叠加单元，其设置在所述半导体基板上，并且用于分支从所述直流高压发生单元输出的所述直流高电压信号，并且用于将所述分支直流高电压信号中的一个叠加在所述分支DC 通过驱动信号发生单元的高电压信号。

公开(公告)号：US07589455B2

公开(公告)日：2009-09-15

申请号：US11942364

申请日：2007-11-19

申请人： Hideo Adachi ,  Katsuhiro Wakabayashi ,  Kazuya Matsumoto ,  Ryo Ota ,  Masaaki Amikura ,  Hiroshi Ito ,  Mamoru Hasegawa

发明人： Hideo Adachi ,  Katsuhiro Wakabayashi ,  Kazuya Matsumoto ,  Ryo Ota ,  Masaaki Amikura ,  Hiroshi Ito ,  Mamoru Hasegawa

IPC分类号： H01L41/09

CPC分类号： A61B8/12 ,  A61B8/445 ,  A61B8/4483 ,  A61B2562/028 ,  B06B1/0292

摘要： A capacitive micromachined ultrasonic transducer (cMUT) is constituted by a plurality of transducer elements comprising plural transducer cells that are mutually connected in parallel and comprises: a silicon substrate; a bottom electrode placed on the top surface of the silicon substrate; an upper electrode placed opposite to the bottom electrode and apart therefrom by a prescribed air or vacuum; a membrane for supporting the bottom electrode; and a membrane supporting part for supporting the membrane, wherein the cMUT comprises a third electrode which has an electrical continuity to the bottom electrode and which corresponds to either one of the transducer cells of a prescribed number of the transducer subelement or of the transducer elements, and a fourth electrode which is a ground electrode electrically connected to the bottom electrode.

摘要翻译： 电容微加工超声换能器（cMUT）由多个换能器元件构成，多个换能器元件包括并联的多个换能器单元，包括：硅基底; 放置在硅衬底的顶表面上的底电极; 上电极通过规定的空气或真空与底电极相对设置并与其分离; 用于支撑底部电极的膜; 以及用于支撑所述膜的膜支撑部分，其中所述cMUT包括与所述底部电极具有电连续性并且对应于规定数量的所述换能器子元件或所述换能器元件中的任一个换能器单元的第三电极， 以及第四电极，其是与所述底部电极电连接的接地电极。

公开(公告)号：US20080067895A1

公开(公告)日：2008-03-20

申请号：US11942364

申请日：2007-11-19

申请人： Hideo Adachi ,  Katsuhiro Wakabayashi ,  Kazuya Matsumoto ,  Ryo Ota ,  Masaaki Amikura ,  Hiroshi Ito ,  Mamoru Hasegawa

发明人： Hideo Adachi ,  Katsuhiro Wakabayashi ,  Kazuya Matsumoto ,  Ryo Ota ,  Masaaki Amikura ,  Hiroshi Ito ,  Mamoru Hasegawa

IPC分类号： H01L41/00

CPC分类号： A61B8/12 ,  A61B8/445 ,  A61B8/4483 ,  A61B2562/028 ,  B06B1/0292

摘要： A capacitive micromachined ultrasonic transducer (cMUT) is constituted by a plurality of transducer elements comprising plural transducer cells that are mutually connected in parallel and comprises: a silicon substrate; a bottom electrode placed on the top surface of the silicon substrate; an upper electrode placed opposite to the bottom electrode and apart therefrom by a prescribed air or vacuum; a membrane for supporting the bottom electrode; and a membrane supporting part for supporting the membrane, wherein the cMUT comprises a third electrode which has an electrical continuity to the bottom electrode and which corresponds to either one of the transducer cells of a prescribed number of the transducer subelement or of the transducer elements, and a fourth electrode which is a ground electrode electrically connected to the bottom electrode.

摘要翻译： 电容微加工超声波换能器（cMUT）由多个换能器元件构成，多个换能器元件包括并联的多个换能器单元，包括：硅基底; 放置在硅衬底的顶表面上的底电极; 上电极通过规定的空气或真空与底电极相对设置并与其分离; 用于支撑底部电极的膜; 以及用于支撑所述膜的膜支撑部分，其中所述cMUT包括与所述底部电极具有电连续性并且对应于规定数量的所述换能器子元件或所述换能器元件中的任一个换能器单元的第三电极， 以及第四电极，其是与所述底部电极电连接的接地电极。