摘要:
A capacitive micromachined ultrasonic transducer (cMUT) is constituted by a plurality of transducer elements comprising plural transducer cells that are mutually connected in parallel and comprises: a silicon substrate; a bottom electrode placed on the top surface of the silicon substrate; an upper electrode placed opposite to the bottom electrode and apart therefrom by a prescribed air or vacuum; a membrane for supporting the bottom electrode; and a membrane supporting part for supporting the membrane, wherein the cMUT comprises a third electrode which has an electrical continuity to the bottom electrode and which corresponds to either one of the transducer cells of a prescribed number of the transducer subelement or of the transducer elements, and a fourth electrode which is a ground electrode electrically connected to the bottom electrode.
摘要:
A capacitive micromachined ultrasonic transducer (cMUT) is constituted by a plurality of transducer elements comprising plural transducer cells that are mutually connected in parallel and comprises: a silicon substrate; a bottom electrode placed on the top surface of the silicon substrate; an upper electrode placed opposite to the bottom electrode and apart therefrom by a prescribed air or vacuum; a membrane for supporting the bottom electrode; and a membrane supporting part for supporting the membrane, wherein the cMUT comprises a third electrode which has an electrical continuity to the bottom electrode and which corresponds to either one of the transducer cells of a prescribed number of the transducer subelement or of the transducer elements, and a fourth electrode which is a ground electrode electrically connected to the bottom electrode.
摘要:
A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate; a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT; a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal; and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.
摘要:
An ultrasonic transducer according to the invention includes a flexible sheet, a rigid body portion including a lower electrode made of at least a thin-film conductive material on a surface of the flexible sheet, a dividing portion which divides the rigid body portion into segments, and a plurality of transducer elements including the divided rigid body portion, has at least one transducer cell composed of one of the segments, an insulating partition portion bonded to the segment, an air gap portion surrounded by the partition portion, an upper electrode opposed to the lower electrode extending to the partition portion to sandwich the air gap portion therebetween, and an upper insulating layer formed on the upper electrode, and includes an upper protection film which continuously covers a surface portion of the transducer elements and the dividing portion.
摘要:
An ultrasonic transducer of a capacitance type includes a pair of electrodes disposed to be opposed to each other and a vibration film including one of the pair of electrodes. The ultrasonic transducer includes n (n is a natural number equal to or larger than 1) air gap layers interposed between the pair of electrodes and m (m is a natural number equal to or larger than 1) insulating layers interposed between the pair of electrodes. In the ultrasonic transducer, a following Formula (1) is satisfied: d1≦{Σdn+Σ(tm/Km)}/3 (1) where, dn indicates a thickness of an nth air gap layer, d1 indicates a thickness of an air gap layer for allowing the vibration film to vibrate, tm indicates a thickness of an mth insulating layer, and Km indicates a dielectric constant of the mth insulating layer.
摘要:
An ultrasonic transducer according to the present invention includes: two or more ultrasonic transducer cells, each of which has a lower electrode, a first insulating layer placed on the lower electrode, a cavity placed on the first insulating layer, a second insulating layer placed on the cavity, and an upper electrode placed above the second insulating layer; channels which communicate the cavities with each other; the second insulating layer placed on the channels; holes formed in the second insulating layer placed on the channels; and sealing portions which seal the holes, where that part of the sealing portions which enters the channels is the same in cross-sectional shape as the holes.
摘要:
An ultrasonic transducer according to the invention includes a flexible sheet, a rigid body portion including a lower electrode made of at least a thin-film conductive material on a surface of the flexible sheet, a dividing portion which divides the rigid body portion into segments, and a plurality of transducer elements including the divided rigid body portion, has at least one transducer cell composed of one of the segments, an insulating partition portion bonded to the segment, an air gap portion surrounded by the partition portion, an upper electrode opposed to the lower electrode extending to the partition portion to sandwich the air gap portion therebetween, and an upper insulating layer formed on the upper electrode, and includes an upper protection film which continuously covers a surface portion of the transducer elements and the dividing portion.
摘要:
A ultrasonic transducer of the invention comprises: a transducer cell including a first electrode and a second electrode disposed separated from the first electrode by an air gap portion; and an electret for applying a potential difference between the first electrode and the second electrode. The electret is disposed in a region where at least a part thereof does not overlap with the transducer cell when viewed from a transmitting direction of ultrasonic waves.
摘要:
An ultrasound transducer includes a substrate, an ultrasound transducer cell placed on one surface of the substrate and having a lower electrode, a first gap portion placed on the lower electrode and an upper electrode placed on the first gap portion, a first conductive layer placed on the other surface of the substrate and electrically connected to one of the lower electrode and the upper electrode, an electret film placed on the first conductive layer, an insulating layer placed on the electret film, and a second conductive layer placed on the insulating layer and electrically connected to the one of the lower electrode and the upper electrode not electrically connected to the first conductive layer.
摘要:
An ultrasonic transducer fabrication method including: depositing a conductive material on an insulating layer, partially etching the conductive material to form lower electrodes; depositing an insulating material to cover the lower electrodes to form a first insulating layer and depositing a sacrificial material thereon, performing etching, to create cavities and a channel-shaped sacrificial layer to communicate the cavities; depositing an insulating material on the first insulating layer to form a second insulating layer; partially etching the second insulating layer to form holes; etching and removing the sacrificial layer through the holes to form the cavities and channels; depositing a conductive material on the second insulating layer to plug the holes and form a conductive film; partially etching the conductive film to form upper electrodes and sealing portions which plug the holes; and forming a protective film on the second insulating layer to cover the upper electrodes and the sealing portions.