公开(公告)号：US20060141384A1

公开(公告)日：2006-06-29

申请号：US10543263

申请日：2004-01-28

申请人： Hideo Hada ,  Takeshi Iwai ,  Masaru Takeshita ,  Ryotaro Hayashi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Kazuyuki Shiotani

发明人： Hideo Hada ,  Takeshi Iwai ,  Masaru Takeshita ,  Ryotaro Hayashi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Kazuyuki Shiotani

IPC分类号： G03C1/76

CPC分类号： C08J3/14 ,  C08J2333/04 ,  G03F7/0397

摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.

摘要翻译： 提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。 在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂 当与水结合时分离成两层，（b2）水。

公开(公告)号：US07312015B2

公开(公告)日：2007-12-25

申请号：US10543263

申请日：2004-01-28

申请人： Hideo Hada ,  Takeshi Iwai ,  Masaru Takeshita ,  Ryotaro Hayashi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Kazuyuki Shiotani

发明人： Hideo Hada ,  Takeshi Iwai ,  Masaru Takeshita ,  Ryotaro Hayashi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Kazuyuki Shiotani

IPC分类号： G03C1/76 ,  G03C1/492 ,  G03C1/494 ,  C08F6/00 ,  C08J3/00

CPC分类号： C08J3/14 ,  C08J2333/04 ,  G03F7/0397

摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.

摘要翻译： 提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。 在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂 当与水结合时分离成两层，（b2）水。

公开(公告)号：US07276575B2

公开(公告)日：2007-10-02

申请号：US10544324

申请日：2004-01-29

申请人： Hideo Hada ,  Takeshi Iwai ,  Miwa Miyairi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida

发明人： Hideo Hada ,  Takeshi Iwai ,  Miwa Miyairi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida

IPC分类号： C08F6/00

CPC分类号： G03F7/0397 ,  C08F6/06 ,  C08F6/12

摘要： A process for refining a crude resin for a resist which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The refining process for the crude resin of resist resin (A) used in a photoresist composition includes at least the resist resin (A) and an acid generator (B) dissolved in a first organic solvent (C1), such that if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution including the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.

摘要翻译： 用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。 用于光致抗蚀剂组合物中的抗蚀剂树脂（A）的粗树脂的精制方法至少包含溶解在第一有机溶剂（C 1）中的抗蚀剂树脂（A）和酸产生剂（B），使得如果浓度 在光致抗蚀剂组合物中的组分（A）的标记为X，并且包含溶解在第二有机溶剂（C 2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度 被标记为Y，然后（i）制备粗制树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

公开(公告)号：US20060135745A1

公开(公告)日：2006-06-22

申请号：US10544324

申请日：2004-01-29

申请人： Hideo Hada ,  Takeshi Iwai ,  Miwa Miyairi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida

发明人： Hideo Hada ,  Takeshi Iwai ,  Miwa Miyairi ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida

IPC分类号： C08F6/00

CPC分类号： G03F7/0397 ,  C08F6/06 ,  C08F6/12

摘要： A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.

摘要翻译： 提供了用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。 该方法为至少包含溶解在第一有机溶剂（C1）中的抗蚀剂树脂（A）和酰化发生剂（B））的光致抗蚀剂组合物中用于抗蚀剂树脂（A）的粗树脂提供精制方法，其中如果 将光致抗蚀剂组合物中组分（A）的浓度标记为X，将包含溶于第二有机溶剂（C2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度 ）标记为Y，然后（i）制备粗树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

公开(公告)号：US20060014098A1

公开(公告)日：2006-01-19

申请号：US10536047

申请日：2003-12-18

申请人： Hideo Hada ,  Takeshi Iwai ,  Masaaki Shimazaki ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Hirokazu Ozaki

发明人： Hideo Hada ,  Takeshi Iwai ,  Masaaki Shimazaki ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Hirokazu Ozaki

IPC分类号： G03C1/76

CPC分类号： B01D61/58 ,  B01D69/02 ,  B01D71/26 ,  B01D71/56 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/162

摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.

摘要翻译： 提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。 此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。 含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过第一过滤器2，第一过滤器2配备有具有ζ电位为 在pH 7.0的蒸馏水中大于-20mV，但不超过15mV。

公开(公告)号：US07771911B2

公开(公告)日：2010-08-10

申请号：US10536047

申请日：2003-12-18

申请人： Hideo Hada ,  Takeshi Iwai ,  Masaaki Shimazaki ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Hirokazu Ozaki

发明人： Hideo Hada ,  Takeshi Iwai ,  Masaaki Shimazaki ,  Masaaki Muroi ,  Kota Atsuchi ,  Hiroaki Tomida ,  Hirokazu Ozaki

IPC分类号： G03C1/00 ,  C02F1/44

CPC分类号： B01D61/58 ,  B01D69/02 ,  B01D71/26 ,  B01D71/56 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/162

摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.

摘要翻译： 提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。 此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。 含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过配备有具有更多ζ电位的第一膜的第一过滤器2a 在pH 7.0的蒸馏水中为-20mV，但不超过15mV。

公开(公告)号：US07695889B2

公开(公告)日：2010-04-13

申请号：US11430738

申请日：2006-05-09

申请人： Takanori Yamagishi ,  Tomo Oikawa ,  Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita

发明人： Takanori Yamagishi ,  Tomo Oikawa ,  Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita

IPC分类号： G03F7/00 ,  G03F7/004 ,  C08F2/00

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046

摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid.The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.

摘要翻译： 一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由 （共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共） ）聚合物和/或提供重复单元（A）的单体和酸。 该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。

公开(公告)号：US07972762B2

公开(公告)日：2011-07-05

申请号：US11913912

申请日：2006-04-26

申请人： Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita ,  Takanori Yamagishi ,  Tomo Oikawa

发明人： Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita ,  Takanori Yamagishi ,  Tomo Oikawa

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  C08F220/28 ,  Y10S430/111

摘要： Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.

摘要翻译： 提供了具有较少缺陷和优异的光刻特性的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括在主链上具有衍生自（α-低级烷基）丙烯酸酯的结构单元并且在酸的作用下表现出增加的碱溶解性的酸性产生组分（B）的树脂组分（A） ），其中树脂组分（A）是具有至少两个结构单元的共聚物，其中该结构单元在聚合至少一种用于制备它们的单体时通过掺入酸而获得。

公开(公告)号：US20090233220A1

公开(公告)日：2009-09-17

申请号：US11913912

申请日：2006-04-26

申请人： Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita ,  Takanori Yamagishi ,  Tomo Oikawa

发明人： Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita ,  Takanori Yamagishi ,  Tomo Oikawa

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0397 ,  C08F220/28 ,  Y10S430/111

摘要： Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.

摘要翻译： 提供了具有较少缺陷和优异的光刻特性的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括在主链上具有衍生自（α-低级烷基）丙烯酸酯的结构单元并且在酸的作用下表现出增加的碱溶解性的酸性产生组分（B）的树脂组分（A） ），其中树脂组分（A）是具有至少两个结构单元的共聚物，其中该结构单元在聚合至少一种用于制备它们的单体时通过掺入酸而获得。

公开(公告)号：US20060257784A1

公开(公告)日：2006-11-16

申请号：US11430738

申请日：2006-05-09

申请人： Takanori Yamagishi ,  Tomo Oikawa ,  Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita

发明人： Takanori Yamagishi ,  Tomo Oikawa ,  Masaaki Muroi ,  Kota Atsuchi ,  Takahiro Nakamura ,  Masakazu Yamada ,  Kensuke Saisyo ,  Masaru Takeshita

IPC分类号： G03C1/00

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046

摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid. The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.

摘要翻译： 一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由 （共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共） ）聚合物和/或提供重复单元（A）的单体和酸。 该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。