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1.发明申请Process for producing photoresist composition, filter, coater and photoresist composition 有权光刻胶组合物，滤光片，涂布机和光致抗蚀剂组合物的制造方法公开(公告)号：US20060014098A1
公开(公告)日：2006-01-19
申请号：US10536047
申请日：2003-12-18
申请人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
发明人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
IPC分类号： G03C1/76
摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
摘要翻译： 提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。 此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。 含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过第一过滤器2，第一过滤器2配备有具有ζ电位为 在pH 7.0的蒸馏水中大于-20mV，但不超过15mV。
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2.发明授权Process for producing photoresist composition, filter, coater and photoresist composition 有权光致抗蚀剂组合物，过滤器，涂布机和光致抗蚀剂组合物的制造方法公开(公告)号：US07771911B2
公开(公告)日：2010-08-10
申请号：US10536047
申请日：2003-12-18
申请人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
发明人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
摘要翻译： 提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。 此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。 含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过配备有具有更多ζ电位的第一膜的第一过滤器2a 在pH 7.0的蒸馏水中为-20mV，但不超过15mV。
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公开(公告)号：US20060141384A1
公开(公告)日：2006-06-29
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译： 提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。 在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂 当与水结合时分离成两层，（b2）水。
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公开(公告)号：US07276575B2
公开(公告)日：2007-10-02
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The refining process for the crude resin of resist resin (A) used in a photoresist composition includes at least the resist resin (A) and an acid generator (B) dissolved in a first organic solvent (C1), such that if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution including the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译： 用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。 用于光致抗蚀剂组合物中的抗蚀剂树脂（A）的粗树脂的精制方法至少包含溶解在第一有机溶剂（C 1）中的抗蚀剂树脂（A）和酸产生剂（B），使得如果浓度 在光致抗蚀剂组合物中的组分（A）的标记为X，并且包含溶解在第二有机溶剂（C 2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度 被标记为Y，然后（i）制备粗制树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。
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公开(公告)号：US20060135745A1
公开(公告)日：2006-06-22
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译： 提供了用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。 该方法为至少包含溶解在第一有机溶剂（C1）中的抗蚀剂树脂（A）和酰化发生剂（B））的光致抗蚀剂组合物中用于抗蚀剂树脂（A）的粗树脂提供精制方法，其中如果 将光致抗蚀剂组合物中组分（A）的浓度标记为X，将包含溶于第二有机溶剂（C2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度 ）标记为Y，然后（i）制备粗树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。
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公开(公告)号：US07312015B2
公开(公告)日：2007-12-25
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译： 提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。 在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂 当与水结合时分离成两层，（b2）水。
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7.发明授权Resist composition, method of forming resist pattern, compound and acid generator 有权抗蚀剂组合物，形成抗蚀剂图案的方法，化合物和酸发生剂公开(公告)号：US07488568B2
公开(公告)日：2009-02-10
申请号：US12060695
申请日：2008-04-01
申请人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
发明人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
IPC分类号： G03F7/004 , G03F7/30 , C07D333/46
CPC分类号： C07D333/76 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/123
摘要： A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X− represents an anion) or an acid generator (B1′) including a compound represented by general formula (b1-9) shown below (wherein R402 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X− represents an anion).
摘要翻译： 包含基础组分（A）和酸产生剂组分（B）的抗蚀剂组合物，所述酸产生剂组分（B）包括含有下述通式（b1-8）表示的化合物的酸产生剂（B1）（ 其中R401表示酸解离的溶解抑制基团; R 41至R 43各自独立地表示卤素原子，卤代烷基，烷基，乙酰基，烷氧基，羧基或羟烷基; Q表示二价 连接基团或单键; X表示阴离子）或包含下述通式（b1-9）表示的化合物的酸产生剂（B1'）（其中R402和R403各自独立地表示氢原子，烷基 基团或卤代烷基; R404表示烷基或卤代烷基，其中R403和R404可以彼此键合以形成环结构;并且X-表示阴离子）。
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8.发明授权Positive type resist composition and resist pattern formation method using same 有权正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法公开(公告)号：US07316888B2
公开(公告)日：2008-01-08
申请号：US11347102
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.
摘要翻译： 提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团 （B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元 酯和衍生自丙烯酸酯的结构单元。 根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。
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公开(公告)号：US20060147832A1
公开(公告)日：2006-07-06
申请号：US10547632
申请日：2004-02-26
申请人： Hideo Hada , Miwa Miyairi , Takeshi Iwai
发明人： Hideo Hada , Miwa Miyairi , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0397
摘要： There is provided technology that enables the suppression of the surface roughness that occurs within a resist pattern, either following etching or following developing, or preferably following both processes. According to this technology, a resist pattern is formed using a positive resist composition including a resin component (A), which contains a structural unit (a1) containing a lactone, as represented by a general formula shown below, and exhibits increased alkali solubility under the action of acid, (wherein, R represents a hydrogen atom or a methyl group), an acid generator component (B) that generates acid on exposure, and an organic solvent (C).
摘要翻译： 提供了能够抑制在抗蚀剂图案中发生的表面粗糙度的技术，无论是在蚀刻之后还是在显影之后，或优选地在两个过程之后。 根据该技术，使用包含树脂组分（A）的正型抗蚀剂组合物形成抗蚀剂图案，该抗蚀剂图案含有如下所示的通式所示的含有内酯的结构单元（a1），并且表现出增加的碱溶解度 酸的作用（其中，R表示氢原子或甲基），曝光时产生酸的酸产生剂成分（B）和有机溶剂（C）。
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10.发明申请公开(公告)号：US20060141382A1
公开(公告)日：2006-06-29
申请号：US10531883
申请日：2003-12-18
申请人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition. The resist composition comprises a resin component (A) that undergoes a change in alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (B) comprises a compound represented by a general formula (I) shown below [wherein, R1 to R3 each represent, independently, a methyl group or an ethyl group; and X− represents an anion].
摘要翻译： 提供了产生良好形状的抗蚀剂图案的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物包含在酸作用下碱溶性变化的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（B） 包含由以下所示的通式（I）表示的化合物[其中，R 1至R 3各自独立地表示甲基或乙基; 和X - 代表阴离子]。
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