公开(公告)号：US5186750A

公开(公告)日：1993-02-16

申请号：US477870

申请日：1990-04-10

Applicant: Hideo Sugiura ,  Takeshi Yamada ,  Ryuzo Iga

Inventor： Hideo Sugiura ,  Takeshi Yamada ,  Ryuzo Iga

IPC: C30B23/02 ,  C30B25/10 ,  H01L21/20

CPC classification number: C30B23/02 ,  C30B25/105 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  B01J2219/1942 ,  Y10S117/904

Abstract: The growth rate of a compound semiconductor thin film is freely enhanced or suppressed by establishing a proper temperature of a substrate 10, and by irradiating by an MOMBE technique, portions corresponding to a desired pattern on the substrate 10 with laser rays having an energy lower than that of photon which can directly decompose an organometal during film growth. A compound semiconductor thin film having a fine pattern with complicated unevenness can be formed on the substrate 10. The relative positions of the source 11 of laser rays, the optical systems 12 and 31 for irradiating the substrate with the laser rays, and the substrate 10 in the vacuum chamber 1 are maintained constant by mounting the body 1 of the MOMBE system, the source 11 of the laser rays, and the optical system 12 and 31 for guiding the laser rays to the body 1 of the MOMBE system on a vibration proof base 30, whereby the formation of a fine pattern becomes possible.

Abstract translation: PCT No.PCT / JP89 / 00827 Sec。 371日期：1990年4月10日 102（e）日期1990年4月10日PCT提交1989年8月15日PCT公布。 第WO90 / 01794号公报 日期1990年02月22日。通过建立基板10的适当温度，并且通过用MOMBE技术照射在基板10上对应于期望图案的部分，化合物半导体薄膜的生长速率自由地增强或抑制， 具有比光子低的能量的激光，其可以在膜生长期间直接分解有机金属。 可以在基板10上形成具有复杂的凹凸的微细图案的复合半导体薄膜。激光源11的相对位置，用激光照射基板的光学系统12和31以及基板10 通过安装MOMBE系统的主体1，激光源11和用于将激光射入MOMBE系统的主体1的光学系统12和31，在真空室1中保持恒定 从而形成精细图案成为可能。

公开(公告)号：US5273932A

公开(公告)日：1993-12-28

申请号：US935067

申请日：1992-08-25

Applicant: Hideo Sugiura ,  Takeshi Yamada ,  Ryuzo Iga

Inventor： Hideo Sugiura ,  Takeshi Yamada ,  Ryuzo Iga

IPC: C30B23/02 ,  C30B25/10 ,  H01L21/20 ,  H01L21/203 ,  H01L21/26

CPC classification number: C30B25/105 ,  C30B23/02 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  B01J2219/1942 ,  Y10S117/904 ,  Y10S148/048

Abstract: The growth rate of a compound semiconductor thin film is freely enhanced or suppressed by establishing a proper temperature of a substrate 10, and by irradiating by an MOMBE technique, portions corresponding to a desired pattern on the substrate 10 with laser rays having an energy lower than that of photon which can directly decompose an organometal during film growth. A compound semiconductor thin film having a fine pattern with complicated unevenness can be formed on the substrate 10. The relative positions of the source 11 of laser rays, the optical systems 12 and 31 for irradiating the substrate with the laser rays, and the substrate 10 in the vacuum chamber 1 are maintained constant by mounting the body 1 of the MOMBE system, the source 11 of the laser rays, and the optical systems 12 and 31 for guiding the laser rays to the body 1 of the MOMBE system on a vibration proof base 30, whereby the formation of a fine pattern becomes possible.

Abstract translation: 化合物半导体薄膜的生长速度通过建立基板10的适当温度而自由地增强或抑制，并且通过用MOMBE技术照射具有能量低于的能量的激光的基板10上对应于期望图案的部分 在膜生长过程中可以直接分解有机金属的光子。 可以在基板10上形成具有复杂的凹凸的微细图案的复合半导体薄膜。激光源11的相对位置，用激光照射基板的光学系统12和31以及基板10 通过安装MOMBE系统的主体1，激光源11和用于将激光射入MOMBE系统的主体1的光学系统12和31，在真空室1中保持恒定 从而形成精细图案成为可能。

公开(公告)号：US4829022A

公开(公告)日：1989-05-09

申请号：US88641

申请日：1987-08-05

Applicant: Naoki Kobayashi ,  Hideo Sugiura ,  Yoshiji Horikoshi

Inventor： Naoki Kobayashi ,  Hideo Sugiura ,  Yoshiji Horikoshi

IPC: C30B23/02 ,  H01L21/203 ,  H01L21/205

CPC classification number: H01L21/02505 ,  C30B23/02 ,  C30B29/68 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/11 ,  Y10S148/16 ,  Y10S148/169

Abstract: A method of forming a III-V semiconductor on the surface of a substrate which is placed in a vacuum chamber and is heated, by supplying one element of Group III and one element of Group V of the periodic table in the form of atoms or molecules to the surface of the substrate. The supply of the element of Group V is decreased to a small quantity insufficient to form a III-V compound semiconductor at least at one period of the growth of the III-V compound, and the element of Group V in the small quantity and the element of Group III are supplied to the surface of the substrate. This method makes it possible to grow III-V compound epitaxial layers which have a high degree of purity and fewer crystal defects and in which surfaces and the interfaces of the heterojunctions are flat on an atomic scale, at a wide temperature range. The present invention can be used for the fabrication of various optical devices and super-high-speed electronic devices.

Abstract translation: PCT No.PCT / JP86 / 00623 Sec。 371日期1987年8月5日 102（e）日期1987年8月5日PCT申请日1986年12月9日PCT公布。 公开号WO87 / 03740 日期：1987年6月18日。一种在衬底的表面上形成III-V半导体的方法，该衬底的表面放置在真空室中，并通过提供元素周期表中的III族元素和V族元素 以原子或分子的形式存在于基底表面。 至少在III-V族化合物生长的至少一个时期，V族元素的供给量减少到不足以形成III-V族化合物半导体的量，而V族的元素少量， 将III族元素供给到基板的表面。 该方法使得可以在宽的温度范围内生长具有高纯度和更少的晶体缺陷的III-V族化合物外延层，并且其中异质结的表面和界面在原子尺度上是平坦的。 本发明可用于各种光学器件和超高速电子器件的制造。