公开(公告)号：US20090239354A1

公开(公告)日：2009-09-24

申请号：US12399047

申请日：2009-03-06

申请人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

发明人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US20110287605A1

公开(公告)日：2011-11-24

申请号：US13198171

申请日：2011-08-04

申请人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

发明人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US20090111248A1

公开(公告)日：2009-04-30

申请号：US12247487

申请日：2008-10-08

申请人： Hideto OHNUMA ,  Tetsuya KAKEHATA ,  Akihisa SHIMOMURA ,  Shinya SASAGAWA ,  Motomu KURATA

发明人： Hideto OHNUMA ,  Tetsuya KAKEHATA ,  Akihisa SHIMOMURA ,  Shinya SASAGAWA ,  Motomu KURATA

IPC分类号： H01L21/02

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/84

摘要： A damaged region is formed by generation of plasma by excitation of a source gas, and by addition of ion species contained in the plasma from one of surfaces of a single crystal semiconductor substrate; an insulating layer is formed over the other surface of the single crystal semiconductor substrate; a supporting substrate is firmly attached to the single crystal semiconductor substrate so as to face the single crystal semiconductor substrate with the insulating layer interposed therebetween; separation is performed at the damaged region into the supporting substrate to which a single crystal semiconductor layer is attached and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; dry etching is performed on a surface of the single crystal semiconductor layer attached to the supporting substrate; the single crystal semiconductor layer is recrystallized by irradiation of the single crystal semiconductor layer with a laser beam to melt at least part of the single crystal semiconductor layer.

摘要翻译： 通过源气体的激发产生等离子体并通过从单晶半导体衬底的表面之一添加包含在等离子体中的离子种类而形成损伤区域; 在单晶半导体衬底的另一个表面上形成绝缘层; 支撑衬底牢固地附接到单晶半导体衬底，以便在其间插入绝缘层的单晶半导体衬底; 通过加热单晶半导体衬底，在损伤区域处分离成与单晶半导体层相连的支撑衬底和部分单晶半导体衬底; 在附着于支撑基板的单晶半导体层的表面进行干蚀刻， 通过用激光束照射单晶半导体层来使单晶半导体层重结晶，从而熔化至少一部分单晶半导体层。

公开(公告)号：US20100291754A1

公开(公告)日：2010-11-18

申请号：US12844224

申请日：2010-07-27

申请人： Masaki KOYAMA ,  Fumito ISAKA ,  Akihisa SHIMOMURA ,  Junpei MOMO

发明人： Masaki KOYAMA ,  Fumito ISAKA ,  Akihisa SHIMOMURA ,  Junpei MOMO

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675

摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.

摘要翻译： 用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。 在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。 用激光束照射与单晶半导体衬底分离的单晶半导体层。 通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。 在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

公开(公告)号：US20100029058A1

公开(公告)日：2010-02-04

申请号：US12512141

申请日：2009-07-30

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20090117716A1

公开(公告)日：2009-05-07

申请号：US12259241

申请日：2008-10-27

申请人： Akihisa SHIMOMURA ,  Junpei Momo ,  Fumito Isaka

发明人： Akihisa SHIMOMURA ,  Junpei Momo ,  Fumito Isaka

IPC分类号： H01L21/62

CPC分类号： H01L21/76254

摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.

摘要翻译： 为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件 通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。 因此，可以提供高性能半导体器件而不进行机械抛光。 此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。 具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。 因此，可以大大提高半导体器件的性能。 此外，可以提供优良的电子装置。

公开(公告)号：US20110212596A1

公开(公告)日：2011-09-01

申请号：US13106158

申请日：2011-05-12

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20090115028A1

公开(公告)日：2009-05-07

申请号：US12246569

申请日：2008-10-07

申请人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Yoji NAGANO ,  Junpei MOMO

发明人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Yoji NAGANO ,  Junpei MOMO

IPC分类号： H01L21/762 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1285 ,  H01L29/66772

摘要： A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.

摘要翻译： 制造包括其间具有缓冲层的单晶半导体层的半导体衬底。 掺杂氢的半导体衬底形成含有大量氢的损伤层。 在单晶半导体衬底和支撑衬底接合之后，加热半导体衬底，使得单晶半导体衬底沿着分离平面分离。 用单晶半导体层侧的激光照射单晶半导体层，从单晶半导体层的激光照射区域的表面向深度方向熔融区域。 基于固体的单晶半导体层的平面取向而不熔化而进行重结晶; 因此，回收单晶半导体层的结晶度，使单晶半导体层的表面平坦化。

公开(公告)号：US20090111244A1

公开(公告)日：2009-04-30

申请号：US12246577

申请日：2008-10-07

申请人： Shunpei YAMAZAKI ,  Junpei MOMO ,  Fumito ISAKA ,  Eiji HIGA ,  Masaki KOYAMA ,  Akihisa SHIMOMURA

发明人： Shunpei YAMAZAKI ,  Junpei MOMO ,  Fumito ISAKA ,  Eiji HIGA ,  Masaki KOYAMA ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  B23K26/03 ,  B23K26/083 ,  B23K26/12 ,  B23K26/127 ,  B23K26/14 ,  H01L21/268 ,  H01L21/3247 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/66772

摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

摘要翻译： 照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。 当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。 单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

公开(公告)号：US20120122298A1

公开(公告)日：2012-05-17

申请号：US13292190

申请日：2011-11-09

申请人： Kosei NEI ,  Akihisa SHIMOMURA

发明人： Kosei NEI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  B23K26/0006 ,  B23K26/354 ,  B23K2103/56 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02675 ,  H01L21/84

摘要： Defects in a semiconductor substrate are reduced. A semiconductor substrate with fewer defects is manufactured with high yield. Further, a semiconductor device is manufactured with high yield. A semiconductor layer is formed over a supporting substrate with an oxide insulating layer interposed therebetween, adhesiveness between the supporting substrate and the oxide insulating layer in an edge portion of the semiconductor layer is increased, an insulating layer over a surface of the semiconductor layer is removed, and the semiconductor layer is irradiated with laser light, so that a planarized semiconductor layer is obtained. For increasing the adhesiveness between the supporting substrate and the oxide insulating layer in the edge portion of the semiconductor layer, laser light irradiation is performed from the surface of the semiconductor layer.

摘要翻译： 半导体衬底的缺陷减少。 具有较少缺陷的半导体衬底以高产率被制造。 此外，以高产率制造半导体器件。 半导体层形成在支撑基板上，隔着氧化物绝缘层，在半导体层的边缘部分中的支撑基板和氧化物绝缘层之间的粘附性增加，去除半导体层表面上的绝缘层 ，并用激光照射半导体层，从而获得平坦化的半导体层。 为了增加半导体层的边缘部分中的支撑衬底和氧化物绝缘层之间的粘合性，从半导体层的表面进行激光照射。