Process for fabricating a thin film transistor
    10.
    发明授权
    Process for fabricating a thin film transistor 失效
    制造薄膜晶体管的工艺

    公开(公告)号:US5120667A

    公开(公告)日:1992-06-09

    申请号:US778750

    申请日:1991-10-18

    摘要: A TFTs fabricating process practicable at a low temperature, which includes the steps of forming a multi-layer body on a substrate, the multi-layer body including a semiconductor layer, a gate insulating layer and a lower thin layer, patterning the multi-layer body into islands, thereby removing the other portions of the multi-layer body, forming an insulating layer on the sides of the island-patterned multi-layered portion by etching at a selective ratio between the constituents of the insulating layer and the lower thin layer, forming an upper thin layer, and etching the upper and lower thin layers into upper and lower gate electrodes by use of one resist pattern.