公开(公告)号：US20100304570A1

公开(公告)日：2010-12-02

申请号：US12740808

申请日：2008-10-31

申请人： Hideyoshi Horie ,  Takashi Fukada

发明人： Hideyoshi Horie ,  Takashi Fukada

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： H01L21/3081 ,  H01L21/30621 ,  H01L21/32134 ,  H01L33/0062 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor etching method whereby a semiconductor layer made of, for example, a Group III-V nitride semiconductor resistant to etching can be etched by a relatively easier process. This etching method comprises forming a metal-fluoride layer 3 at least as a part of an etching mask on the surface of a base structure (1,2); treating the metal-fluoride layer with a liquid; and etching the base structure using the metal-fluoride layer as a mask.

摘要翻译： 公开了一种半导体蚀刻方法，由此可以通过相对更容易的工艺来蚀刻由例如耐蚀刻的III-V族氮化物半导体制成的半导体层。 该蚀刻方法包括在基底结构（1,2）的表面上至少形成蚀刻掩模的一部分的金属 - 氟化物层3; 用液体处理金属氟化物层; 并使用金属氟化物层作为掩模蚀刻基底结构。

公开(公告)号：US06879778B2

公开(公告)日：2005-04-12

申请号：US10313707

申请日：2002-12-05

申请人： Woo Sik Yoo ,  Takashi Fukada

发明人： Woo Sik Yoo ,  Takashi Fukada

IPC分类号： H01L21/205 ,  C23C16/46 ,  H01L21/00 ,  H01L21/26 ,  H01L21/324 ,  F26B19/00

CPC分类号： H01L21/67115 ,  C23C16/46 ,  H01L21/67109

摘要： A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

摘要翻译： 一种用于在半导体器件上等温分布温度的系统和方法。 提供一种炉组件，其包括配置成可移除地接收具有完全补充半导体晶片的晶片载体的处理管。 提供一种加热组件，其可包括加热元件，该加热元件定位成加热允许进入过程管的空气或其它气体。 炉组件和处理管能够被垂直地升高和降低到包围加热组件在处理管内的位置。 一旦加热组件与处理管形成密封，则处理管被排出并吹扫空气。 然后允许气体流入处理管并与加热元件交换热量。 加热的气体通过处理管循环以对流地改变晶片的温度。

公开(公告)号：US5753564A

公开(公告)日：1998-05-19

申请号：US486260

申请日：1995-06-07

申请人： Takashi Fukada

发明人： Takashi Fukada

IPC分类号： C23C16/40 ,  H01L21/02

CPC分类号： C23C16/402

摘要： A method for forming a thin film of a silicon oxide on a silicon substrate is disclosed. An Si oxide film is formed by an ECR plasma. CVD with the use of a silicon compound gas containing fluorine, whereby the generation of particles can be suppressed to improve the quality of the device and the yield, the planarity of the Si oxide film functioning as an interlayer dielectric film or a passivation film can be improved, and the higher speed operation in a semiconductor device can be accomplished.

摘要翻译： 公开了一种在硅衬底上形成氧化硅薄膜的方法。 通过ECR等离子体形成Si氧化膜。 通过使用含氟的硅化合物气体CVD，可以抑制颗粒的产生，提高器件的质量和产率，作为层间电介质膜或钝化膜的Si氧化膜的平面性可以是 可以实现半导体器件的高速运转。