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公开(公告)号：US07501625B2
公开(公告)日：2009-03-10
申请号：US11442566
申请日：2006-05-30
申请人： Hikaru Koyama , Hiroshi Makino , Mitsugu Sato
发明人： Hikaru Koyama , Hiroshi Makino , Mitsugu Sato
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , H01J2237/0042 , H01J2237/0047 , H01J2237/2817
摘要： A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.
摘要翻译： 发射光电子的电荷控制电极平行于晶片（样品）正上方，并且电极具有通孔，使得可以通过充电控制电极将紫外光照射到晶片。 具体地，使用形成为网状或包含一个或多个孔的金属板作为充电控制电极。 通过将电荷控制电极与样品平行放置在正上方，当向电极施加负电压时，产生大致垂直于晶片的电场。 因此，光电子被有效地吸收在晶片中。 此外，通过使用具有与晶片大致相同尺寸的电荷控制电极，可以集中均匀地去除晶片的整个表面上的电荷。 因此，可以减少该过程所需的时间。
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公开(公告)号：US20060289755A1
公开(公告)日：2006-12-28
申请号：US11442566
申请日：2006-05-30
申请人： Hikaru Koyama , Hiroshi Makino , Mitsugu Sato
发明人： Hikaru Koyama , Hiroshi Makino , Mitsugu Sato
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , H01J2237/0042 , H01J2237/0047 , H01J2237/2817
摘要： A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.
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公开(公告)号：US07655906B2
公开(公告)日：2010-02-02
申请号：US11503997
申请日：2006-08-15
申请人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
发明人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
CPC分类号： G01N23/2251 , G01R31/307 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/0048 , H01J2237/2816 , H01J2237/2817
摘要： An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.
摘要翻译： 一种半导体器件和图案的检查和测量方法和装置，例如使用能够比常规系统更高精度测量样品的电位的电子束的光掩模。 当在要检查的半导体器件中观察到S曲线时，通过优化用于照射的一次电子束的能量来抑制检查样品表面的电位的波动。 当测量半导体器件的表面电位时，可以获得更精确的测量而没有来自绝缘膜表面的不利影响。 此外，可以在不安装诸如能量过滤器的晶片表面电位测量的专用装置的情况下测量表面电位，因此可以降低装置的成本。
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公开(公告)号：US20070040118A1
公开(公告)日：2007-02-22
申请号：US11503997
申请日：2006-08-15
申请人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
发明人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
CPC分类号： G01N23/2251 , G01R31/307 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/0048 , H01J2237/2816 , H01J2237/2817
摘要： A inspecting and measurement method and inspecting and measurement apparatus for semiconductor devices and patterns such as photomasks using an electron beam which can measure the charged potential of a sample with higher precision than in the prior art, and a inspecting and measurement apparatus which can measure charged potential by means of a simple construction. When an S curve is observed in a semiconductor device to be inspectioned and measured, fluctuations of the charged potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise potential measurement than that of the prior art can be performed which is almost unaffected by the charged potential of an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.
摘要翻译： 使用电子束的半导体器件和图案的检查和测量方法和检查和测量装置，其可以测量比现有技术更高精度的样品的带电电位的电子束，以及可以测量充电的检查和测量装置 通过简单的构造来实现潜力。 当在要检查和测量的半导体器件中观察到S曲线时，通过优化用于照射的一次电子束的能量来抑制检查样品表面的带电电位的波动。 当测量半导体器件的表面电位时，可以进行比现有技术更精确的电位测量，其几乎不受绝缘膜表面的带电电位的影响。 此外，可以在不安装诸如能量过滤器的晶片表面电位测量的专用装置的情况下测量表面电位，因此可以降低装置的成本。
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公开(公告)号：US20070228276A1
公开(公告)日：2007-10-04
申请号：US11692263
申请日：2007-03-28
申请人： HIROSHI MAKINO , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
发明人： HIROSHI MAKINO , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
IPC分类号： G21K7/00
CPC分类号： H01J37/265 , H01J2237/047 , H01J2237/0473 , H01J2237/0475 , H01J2237/2817
摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.
摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。
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公开(公告)号：US20070085005A1
公开(公告)日：2007-04-19
申请号：US11449650
申请日：2006-06-09
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译： 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。
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公开(公告)号：US07652248B2
公开(公告)日：2010-01-26
申请号：US11692263
申请日：2007-03-28
申请人： Hiroshi Makino , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
发明人： Hiroshi Makino , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
CPC分类号： H01J37/265 , H01J2237/047 , H01J2237/0473 , H01J2237/0475 , H01J2237/2817
摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.
摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。
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公开(公告)号：US07547884B2
公开(公告)日：2009-06-16
申请号：US11449650
申请日：2006-06-09
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译： 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。
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公开(公告)号：US20060163480A1
公开(公告)日：2006-07-27
申请号：US11375070
申请日：2006-03-15
申请人： Hikaru Koyama , Hidetoshi Nishiyama , Mari Nozoe
发明人： Hikaru Koyama , Hidetoshi Nishiyama , Mari Nozoe
IPC分类号： G21K7/00
CPC分类号： G01R31/311
摘要： A scanning electron microscope or inspection system includes a sample stage on which a sample such as a wafer is loaded, an electro optical unit to scan an electron beam to the sample, and a charge control electrode to which voltage for controlling a charged state of the sample is applied. Further, there is provided an ultraviolet irradiation device for irradiating ultraviolet light onto the sample, a retarding electric source to apply a retarding voltage to the sample stage or the sample, and a detection unit for detecting secondary electrons or backscattering electrons generated in response to the scan of the electron beam. A monitoring unit for displaying an image of the sample or an inspection unit for inspection of the sample is provided which effects display or inspection based on signals from the detection unit.
摘要翻译： 扫描电子显微镜或检查系统包括其上装载诸如晶片的样品的样品台，向样品扫描电子束的电光单元以及用于控制电极的充电状态的电压 样品被应用。 此外，提供了一种用于向样品照射紫外光的紫外线照射装置，向样品台或样品施加延迟电压的延迟电源，以及用于检测响应于该样品的样品产生的二次电子或反向散射电子的检测单元 扫描电子束。 提供了用于显示样本的图像的监视单元或用于检查样本的检查单元，其基于来自检测单元的信号进行显示或检查。
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公开(公告)号：US07019294B2
公开(公告)日：2006-03-28
申请号：US11002124
申请日：2004-12-03
申请人： Hikaru Koyama , Hidetoshi Nishiyama , Mari Nozoe
发明人： Hikaru Koyama , Hidetoshi Nishiyama , Mari Nozoe
CPC分类号： G01R31/311
摘要： Inspection method and apparatus using a charged particle beam for the inspection of defects on an unfinished semiconductor wafer in the manufacturing process of a semiconductor device, a uniform charge across the wafer is attained by performing ultraviolet irradiation and voltage application to a charge control electrode in a coordinated manner.
摘要翻译： 使用带电粒子束的检查方法和装置，用于在半导体器件的制造过程中检查未完成的半导体晶片上的缺陷，跨晶片的均匀电荷通过对电荷控制电极进行紫外线照射和电压施加来实现 协调一致
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