公开(公告)号：US20230298845A1

公开(公告)日：2023-09-21

申请号：US18016764

申请日：2020-07-20

申请人： Hitachi High-Tech Corporation

发明人： Kazuhiro HONDA ,  Hiroyuki ITO ,  Takashi DOI ,  Soichiro MATSUNAGA

IPC分类号： H01J37/05 ,  H01J37/12 ,  H01J37/09 ,  H01J37/244

CPC分类号： H01J37/05 ,  H01J37/12 ,  H01J37/09 ,  H01J37/244 ,  H01J2237/057 ,  H01J2237/04924 ,  H01J2237/0475 ,  H01J2237/24485

摘要： A decelerating electrode of this energy filter comprises: an electrode pair that has an opening; and a cavity portion that provided in a rotationally symmetrical manner with the center of the opening as the optical axis. Voltages with electric potentials that are substantially the same as that of a charged particle beam are independently applied to the both sides of the decelerating electrode. When an electrical field protrudes into the cavity portion provided in the decelerating electrode, a saddle point having the same electric potential as that of incident charged particles is formed inside the decelerating electrode. The saddle point acts as a high pass filter for incident charged particles at an energy resolution of 1 mV or less. By analyzing charged particles which have been energy-separated, it is possible to measure the energy spectrum and ΔE at the high resolution of 1 mV or less. In addition, by causing the energy-separated charged particle beam to converge and scan on the sample surface with an electron lens, it is possible to obtain an SEM/STEM image with a high resolution (see FIG. 3).

公开(公告)号：US09799492B2

公开(公告)日：2017-10-24

申请号：US15227298

申请日：2016-08-03

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Julian Blake

IPC分类号： H01J37/32 ,  H01J37/317 ,  C23C14/22 ,  C23C14/56 ,  C23C16/44 ,  C23C16/50

CPC分类号： H01J37/3244 ,  C23C14/22 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/3171 ,  H01J37/32477 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/3321 ,  H01J2237/334

摘要： Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

公开(公告)号：US09536703B2

公开(公告)日：2017-01-03

申请号：US14899795

申请日：2014-07-11

申请人： Hitachi High-Technologies Corporation

发明人： Toshihide Agemura ,  Hideo Morishita

IPC分类号： H01J37/26 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01J37/265 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0475 ,  H01J2237/103 ,  H01J2237/1534 ,  H01J2237/24475 ,  H01J2237/2448

摘要： This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam (5) when the electron beam is passing through an objective lens; and a first detector (8) and a second detector (7) that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (9A). When the distance between the tip (13) at the sample side of the objective lens and the sensitive surface of the first detector is L1 and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L2, then L1/L2≦5/9. As a result, when performing low-acceleration observation using a deceleration method by means of a scanning electron microscope, it is possible to detect signal electrons without the effect of shading in a magnification range of a low magnification on the order of hundreds of times to a high magnification of at least 100,000×. Also, it is possible to highly efficiently detect backscattered electrons, of which the amount generated is less than that of secondary electrons.

摘要翻译： 该扫描电子显微镜具备：当电子束通过物镜时减速电子束（5）的减速装置; 以及设置在电子束和物镜之间并且具有相对于电子束的光轴具有轴对称形状的敏感表面的第一检测器（8）和第二检测器（7）。 第一检测器相对于第二检测器在样本侧设置，并且专门检测已经通过延迟场能量滤波器（9A）的具有高能量的信号电子。 当物镜的样品侧的尖端（13）和第一检测器的敏感表面之间的距离为L1，物镜的样品侧的尖端与第二检测器的敏感表面之间的距离为 L2，则L1 /L2≤5/ 9。 结果，当利用扫描电子显微镜使用减速方法进行低加速度观察时，可以在几百倍数倍的低倍数的倍率范围内检测信号电子而不影响阴影效果 高倍数至少为100,000×。 此外，可以高效地检测产生的量小于二次电子的反向散射电子。

公开(公告)号：US09354188B2

公开(公告)日：2016-05-31

申请号：US14019887

申请日：2013-09-06

申请人： Carl Zeiss Microscopy GmbH

发明人： Michael Albiez

IPC分类号： G01N23/225 ,  H01J37/10 ,  H01J37/26 ,  H01J37/28

CPC分类号： G01N23/225 ,  H01J37/10 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0475 ,  H01J2237/24475 ,  H01J2237/2449 ,  H01J2237/2538

摘要： A particle beam device, in particular an electron beam device, is provided having a beam generator for generating a primary particle beam, an objective lens for focusing the primary particle beam onto an object, and a detector for detecting particles emitted by the object. The objective lens has at least one magnetic unit, with the magnetic unit generating at least one first crossover and at least one second crossover. The first crossover is arranged in the objective lens or in a region between the objective lens and the object. The second crossover is arranged at the object. The device permits the examination of the object using particles which have a low energy, with good imaging properties. A method for operating the particle beam device is also provided.

摘要翻译： 提供了一种粒子束装置，特别是电子束装置，其具有用于产生一次粒子束的束发生器，用于将一次粒子束聚焦到物体上的物镜和用于检测物体发射的粒子的检测器。 物镜具有至少一个磁性单元，磁性单元产生至少一个第一交叉和至少一个第二交叉。 第一分频器布置在物镜中或物镜与物体之间的区域中。 第二个交叉排列在物体上。 该装置允许使用具有低能量，具有良好成像性能的粒子来检查物体。 还提供了一种操作粒子束装置的方法。

公开(公告)号：US20160148782A1

公开(公告)日：2016-05-26

申请号：US14899795

申请日：2014-07-11

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Toshihide AGEMURA ,  Hideo MORISHITA

IPC分类号： H01J37/26 ,  H01J37/244 ,  H01J37/28

CPC分类号： H01J37/265 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0475 ,  H01J2237/103 ,  H01J2237/1534 ,  H01J2237/24475 ,  H01J2237/2448

摘要： This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam (5) when the electron beam is passing through an objective lens; and a first detector (8) and a second detector (7) that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (9A). When the distance between the tip (13) at the sample side of the objective lens and the sensitive surface of the first detector is L1 and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L2, then L1/L2≦5/9. As a result, when performing low-acceleration observation using a deceleration method by means of a scanning electron microscope, it is possible to detect signal electrons without the effect of shading in a magnification range of a low magnification on the order of hundreds of times to a high magnification of at least 100,000×. Also, it is possible to highly efficiently detect backscattered electrons, of which the amount generated is less than that of secondary electrons.

摘要翻译： 该扫描电子显微镜具备：当电子束通过物镜时减速电子束（5）的减速装置; 以及设置在电子束和物镜之间并且具有相对于电子束的光轴具有轴对称形状的敏感表面的第一检测器（8）和第二检测器（7）。 第一检测器相对于第二检测器在样本侧设置，并且专门检测已经通过延迟场能量滤波器（9A）的具有高能量的信号电子。 当物镜的样品侧的尖端（13）和第一检测器的敏感表面之间的距离为L1，物镜的样品侧的尖端与第二检测器的敏感表面之间的距离为 L2，然后L1 / L2＆nlE; 5/9。 结果，当利用扫描电子显微镜使用减速方法进行低加速度观察时，可以在几百倍数倍的低倍数的倍率范围内检测信号电子而不影响阴影效果 高倍数至少为100,000×。 此外，可以高效地检测产生的量小于二次电子的反向散射电子。

公开(公告)号：US20070176114A1

公开(公告)日：2007-08-02

申请号：US11647801

申请日：2006-12-29

申请人： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

发明人： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC分类号： H01J27/00

CPC分类号： H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

摘要： An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

摘要翻译： 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域中，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。

公开(公告)号：US20040104682A1

公开(公告)日：2004-06-03

申请号：US10433493

申请日：2004-01-08

发明人： Thomas N. Horsky ,  Brian F. Cohen ,  Wade A. Krull ,  George P. Sacco Jr.

IPC分类号： H01J007/24 ,  H01K001/62

CPC分类号： H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L29/6659

摘要： Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

摘要翻译： 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US20030127604A1

公开(公告)日：2003-07-10

申请号：US09486042

申请日：2000-02-17

发明人： HIDEO TODOKORO ,  SHOU TAKAMI ,  MAKOTO EZUMI ,  OSAMU YAMADA ,  YOICHI OSE ,  TOMOHIRO KUDO

IPC分类号： G21K007/00 ,  G01N023/00 ,  G01N021/01 ,  G01N021/51 ,  G01N023/10 ,  G01N023/12

CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/0475 ,  H01J2237/04756

摘要： The present invention relates to a scanning electron microscope employing a deceleration field forming technology (retarding), more particularly a scanning electron microscope which separates and detects secondary electrons at high efficiency. The object of the present invention is accomplished by providing an electron source, a lens for condensing the primary electron beam which is emitted from said electron source, a detector for detecting electrons which are generated by radiation of the primary electron beam onto a specimen, a first deceleration means for decelerating the primary electron beam which is radiated onto said specimen, a second deceleration means for decelerating electrons which are generated on the specimen, and a deflector for deflecting said electrons which are decelerated by said second decelerating means.

摘要翻译： 本发明涉及一种使用减速场形成技术（延迟）的扫描电子显微镜，更具体地说，涉及一种以高效率分离和检测二次电子的扫描电子显微镜。 本发明的目的是通过提供电子源，用于冷凝从所述电子源发射的一次电子束的透镜，用于检测通过将一次电子束辐射到样本上产生的电子的检测器， 第一减速装置，用于使被辐射到所述样本上的一次电子束减速，用于减速在所述样本上产生的电子的第二减速装置，以及用于使由所述第二减速装置减速的所述电子偏转的偏转器。

公开(公告)号：US20160372300A1

公开(公告)日：2016-12-22

申请号：US15244569

申请日：2016-08-23

申请人： Liang Jie Wong ,  Byron Freelon ,  Timm Rohwer ,  Nuh Gedik ,  Steven Glenn Johnson

发明人： Liang Jie Wong ,  Byron Freelon ,  Timm Rohwer ,  Nuh Gedik ,  Steven Glenn Johnson

IPC分类号： H01J37/06

CPC分类号： H01J37/06 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/063

摘要： Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.

摘要翻译： 用于调制粒子脉冲的方法和装置包括一系列Hermite-Gaussian光学模式，其有效地构成了粒子脉冲的休止帧中的三维光阱。 调整粒子脉冲的传播和光脉冲之间的光入射角以改善压缩。 可以通过这些方法和装置调制的粒子脉冲包括带电粒子和在瑞利状态下具有非零极化率的粒子。 针对一阶Hermite-Gaussian光束的麦克斯韦方程的精确解决方案在纵向和横向尺寸上均显示出超过100的单电子脉冲压缩因子。 该方法和装置在用于单电子和多电子脉冲压缩的超快电子成像中是有用的，并且作为在聚焦超短电子脉冲时避开磁性透镜中的时间失真的手段。

公开(公告)号：US20150001391A1

公开(公告)日：2015-01-01

申请号：US13928815

申请日：2013-06-27

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Julian Blake

IPC分类号： H01J37/317 ,  C23C14/22 ,  H01J49/06 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C14/22 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/3171 ,  H01J37/32477 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/3321 ,  H01J2237/334

摘要： Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

摘要翻译： 公开了具有纹理硅衬垫的衬底处理系统，例如离子注入系统，沉积系统和蚀刻系统。 使用化学处理来形成硅衬里，该化学处理产生小的特征，称为微锥体，其高度可以小于20微米。 尽管这些微锥体比石墨衬垫中通常发现的纹理特征小得多，但纹理硅能够保持沉积的涂层并且抗剥落。 还公开了对这些基板处理系统进行预防性维护的方法。