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公开(公告)号：US07547884B2
公开(公告)日：2009-06-16
申请号：US11449650
申请日：2006-06-09
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译： 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。
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公开(公告)号：US20070085005A1
公开(公告)日：2007-04-19
申请号：US11449650
申请日：2006-06-09
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译： 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。
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公开(公告)号：US20070228276A1
公开(公告)日：2007-10-04
申请号：US11692263
申请日：2007-03-28
申请人： HIROSHI MAKINO , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
发明人： HIROSHI MAKINO , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
IPC分类号： G21K7/00
CPC分类号： H01J37/265 , H01J2237/047 , H01J2237/0473 , H01J2237/0475 , H01J2237/2817
摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.
摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。
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公开(公告)号：US07652248B2
公开(公告)日：2010-01-26
申请号：US11692263
申请日：2007-03-28
申请人： Hiroshi Makino , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
发明人： Hiroshi Makino , Kenji Tanimoto , Zhaohui Cheng , Hikaru Koyama
CPC分类号： H01J37/265 , H01J2237/047 , H01J2237/0473 , H01J2237/0475 , H01J2237/2817
摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.
摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。
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公开(公告)号：US07655906B2
公开(公告)日：2010-02-02
申请号：US11503997
申请日：2006-08-15
申请人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
发明人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
CPC分类号： G01N23/2251 , G01R31/307 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/0048 , H01J2237/2816 , H01J2237/2817
摘要： An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.
摘要翻译： 一种半导体器件和图案的检查和测量方法和装置，例如使用能够比常规系统更高精度测量样品的电位的电子束的光掩模。 当在要检查的半导体器件中观察到S曲线时，通过优化用于照射的一次电子束的能量来抑制检查样品表面的电位的波动。 当测量半导体器件的表面电位时，可以获得更精确的测量而没有来自绝缘膜表面的不利影响。 此外，可以在不安装诸如能量过滤器的晶片表面电位测量的专用装置的情况下测量表面电位，因此可以降低装置的成本。
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公开(公告)号：US20070040118A1
公开(公告)日：2007-02-22
申请号：US11503997
申请日：2006-08-15
申请人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
发明人： Zhaohui Cheng , Hiroshi Makino , Hikaru Koyama , Mitsugu Sato
CPC分类号： G01N23/2251 , G01R31/307 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/0048 , H01J2237/2816 , H01J2237/2817
摘要： A inspecting and measurement method and inspecting and measurement apparatus for semiconductor devices and patterns such as photomasks using an electron beam which can measure the charged potential of a sample with higher precision than in the prior art, and a inspecting and measurement apparatus which can measure charged potential by means of a simple construction. When an S curve is observed in a semiconductor device to be inspectioned and measured, fluctuations of the charged potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise potential measurement than that of the prior art can be performed which is almost unaffected by the charged potential of an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.
摘要翻译： 使用电子束的半导体器件和图案的检查和测量方法和检查和测量装置，其可以测量比现有技术更高精度的样品的带电电位的电子束，以及可以测量充电的检查和测量装置 通过简单的构造来实现潜力。 当在要检查和测量的半导体器件中观察到S曲线时，通过优化用于照射的一次电子束的能量来抑制检查样品表面的带电电位的波动。 当测量半导体器件的表面电位时，可以进行比现有技术更精确的电位测量，其几乎不受绝缘膜表面的带电电位的影响。 此外，可以在不安装诸如能量过滤器的晶片表面电位测量的专用装置的情况下测量表面电位，因此可以降低装置的成本。
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公开(公告)号：US09991092B2
公开(公告)日：2018-06-05
申请号：US13387183
申请日：2010-07-30
CPC分类号： H01J37/28 , H01J2237/2803
摘要： A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.
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公开(公告)号：US20120153145A1
公开(公告)日：2012-06-21
申请号：US13387183
申请日：2010-07-30
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/2803
摘要： A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.
摘要翻译： 本发明的扫描电子显微镜通过利用电子束扫描样品上的二维区域形成扫描区域的图像时，根据样品改变扫描线密度来进行扫描，或者设置有GUI 具有样本信息输入装置，其输入与样本有关的信息和根据输入显示推荐的扫描条件的显示装置，并通过选择推荐的扫描条件，根据样本以扫描线密度进行扫描。 结果，在使用扫描电子显微镜观察的情况下，能够改善二维图案的轮廓的对比度并抑制由初级带电粒子辐射引起的充电的影响并抑制阴影的合适的扫描装置，并且通过提高检测率 的二次电子和扫描方法。
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9.发明申请Charge control apparatus and measurement apparatus equipped with the charge control apparatus 有权装有充电控制装置的充电控制装置和测量装置公开(公告)号：US20090166557A1
公开(公告)日：2009-07-02
申请号：US11338843
申请日：2006-01-25
申请人： Hiroshi Makino , Zhaohui Cheng , Kenji Tanimoto , Hideo Todokoro
发明人： Hiroshi Makino , Zhaohui Cheng , Kenji Tanimoto , Hideo Todokoro
CPC分类号： H01J37/073 , H01J37/026 , H01J37/28 , H01J2237/0048 , H01J2237/0635 , H01J2237/24564 , H01J2237/2594
摘要： The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.
摘要翻译： 本发明解决了由碳纳米管电子源的发射变化引起的样品表面的电荷不均匀性和发射特性的个体差异。 在充电控制处理期间，实时测量样品表面的电荷。 作为解决由电子照射密度不均匀引起的电荷不均匀的手段，照射样品和样品的电子相对于平均电子照射密度移动。 此外，测量流入样本的吸收电流和从样本和背散射电子发射的二次电子的数量作为用于实时监测样品表面的电荷的装置。
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10.发明授权Charge control apparatus and measurement apparatus equipped with the charge control apparatus 有权装有充电控制装置的充电控制装置和测量装置公开(公告)号：US07683319B2
公开(公告)日：2010-03-23
申请号：US11338843
申请日：2006-01-25
申请人： Hiroshi Makino , Zhaohui Cheng , Kenji Tanimoto , Hideo Todokoro
发明人： Hiroshi Makino , Zhaohui Cheng , Kenji Tanimoto , Hideo Todokoro
IPC分类号： H01J37/256
CPC分类号： H01J37/073 , H01J37/026 , H01J37/28 , H01J2237/0048 , H01J2237/0635 , H01J2237/24564 , H01J2237/2594
摘要： The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.
摘要翻译： 本发明解决了由碳纳米管电子源的发射变化引起的样品表面的电荷不均匀性和发射特性的个体差异。 在充电控制处理期间，实时测量样品表面的电荷。 作为解决由电子照射密度不均匀引起的电荷不均匀的手段，照射样品和样品的电子相对于平均电子照射密度移动。 此外，测量流入样本的吸收电流和从样本和背散射电子发射的二次电子的数量作为用于实时监测样品表面的电荷的装置。
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