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    RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
    1.
    发明申请
    RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER 有权
    耐腐蚀聚合物，耐腐蚀组合物，形成图案的方法和起始化合物用于生产耐候聚合物

    公开(公告)号：US20090198065A1

    公开(公告)日：2009-08-06

    申请号：US12411703

    申请日：2009-03-26

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： C07D211/00 ,  C07C69/608 ,  C07C69/74 ,  C07D307/02 ,  C07D309/02 ,  C07D311/78 ,  C07C323/00 ,  C07C69/96

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    2.
    发明授权
    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
    抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物

    公开(公告)号：US08241829B2

    公开(公告)日：2012-08-14

    申请号：US10592057

    申请日：2005-03-08

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3和n1各自表示0或1; R1表示H或甲基。

    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    3.
    发明申请
    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
    抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物

    公开(公告)号：US20070190449A1

    公开(公告)日：2007-08-16

    申请号：US10592057

    申请日：2005-03-08

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K 1和K 2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L 1和L 2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种。 M 1，M 2和M 3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸可分解键; k1，k2，l1，l2，m1，m2，m3和n1各自表示0或1; R 1表示H或甲基。

    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    4.
    发明授权
    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
    抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物

    公开(公告)号：US08614283B2

    公开(公告)日：2013-12-24

    申请号：US13032299

    申请日：2011-02-22

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： C08F22/14 ,  C08F22/20 ,  C08F220/68 ,  C08F220/18 ,  C08F220/28

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    5.
    发明授权
    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
    抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物

    公开(公告)号：US08049042B2

    公开(公告)日：2011-11-01

    申请号：US12411703

    申请日：2009-03-26

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： C07C321/02 ,  C07C321/26 ,  C07C31/18 ,  C07C19/075 ,  C07D221/00

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

    RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
    6.
    发明申请
    RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER 有权
    耐腐蚀聚合物，耐腐蚀组合物，形成图案的方法和起始化合物用于生产耐候聚合物

    公开(公告)号：US20110144295A1

    公开(公告)日：2011-06-16

    申请号：US13032299

    申请日：2011-02-22

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： C08F220/28 ,  C08F220/18 ,  C08F220/42

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。