公开(公告)号：US20070009100A1

公开(公告)日：2007-01-11

申请号：US11428711

申请日：2006-07-05

Applicant: Hiroaki KIKUCHI ,  Hideyuki IMAIDA

Inventor： Hiroaki KIKUCHI ,  Hideyuki IMAIDA

IPC: H04N7/167

CPC classification number: H04N7/17318 ,  G06F17/30855 ,  G11B27/034 ,  G11B27/105 ,  G11B27/322 ,  H04N21/235 ,  H04N21/435 ,  H04N21/47815 ,  H04N21/8583 ,  H04N21/8586

Abstract: Disclosed herein is a production apparatus for index information with link information. The apparatus includes a database in which a corresponding relationship between region identification information applied to a key region which provides a partial region in a main image specified arbitrarily by an operator and link information for accessing to related information of the partial region is listed. The apparatus further includes an information embedding section configured to refer to said database to embed, into index information in which a corresponding relationship between the region identification information applied to the key region and time information is listed, the corresponding link information.

Abstract translation: 这里公开了一种具有链接信息的索引信息的制造装置。 该装置包括数据库，其中列出了应用于提供运营商任意指定的主图像中的部分区域的关键区域的区域识别信息与用于访问部分区域的相关信息的链接信息之间的对应关系。 该装置还包括信息嵌入部分，被配置为参考所述数据库将嵌入到其中列出了应用于密钥区域的区域标识信息和时间信息之间的对应关系的索引信息中的相应链接信息。

公开(公告)号：US20110244638A1

公开(公告)日：2011-10-06

申请号：US13071083

申请日：2011-03-24

Applicant: Hiroaki KIKUCHI ,  Katsunori KONDO ,  Shigeru SHINOHARA ,  Osamu TAKAHASHI ,  Tomoaki YAMABAYASHI

Inventor： Hiroaki KIKUCHI ,  Katsunori KONDO ,  Shigeru SHINOHARA ,  Osamu TAKAHASHI ,  Tomoaki YAMABAYASHI

IPC: H01L21/3205 ,  H01L21/332 ,  H01L21/336

CPC classification number: H01L29/7397 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66348

Abstract: A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.

Abstract translation: 半导体器件制造方法是形成半导体器件的方法，该半导体器件包括：单元部分，其包括在半导体层中形成沟槽型栅极的多个晶体管单元，并且扩散层形成在 门和围绕电池部分的保护环部分。 半导体器件制造方法包括在形成有栅极和扩散层的半导体层的表面上形成层间电介质膜; 通过回蚀来减小在电池部件中形成的层间绝缘膜的厚度; 在所述层间电介质膜中的所述扩散层上方的位置处形成具有孔或沟槽形状的接触部分; 并在层间辩证膜上形成金属膜。

公开(公告)号：US20140017146A1

公开(公告)日：2014-01-16

申请号：US14031948

申请日：2013-09-19

Applicant: Mitsuru SAKAMOTO ,  Hirohiko URUSHIYAMA ,  Hiroaki KIKUCHI ,  Tomoaki YAMABAYASHI

Inventor： Mitsuru SAKAMOTO ,  Hirohiko URUSHIYAMA ,  Hiroaki KIKUCHI ,  Tomoaki YAMABAYASHI

IPC: G01N27/00

CPC classification number: G01N27/00 ,  G01N27/4145

Abstract: Disclosed are: a biosensor kit in which a biosensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted.

Abstract translation: 公开了一种生物传感器套件，其中利用场效应晶体管的生物传感器在储存或运输过程中不会劣化; 以及配备有生物传感器芯片的感兴趣物质的检测系统。 生物传感器套件包括可以定量测量感兴趣的物质的生物传感器芯片和可以气密地密封生物传感器芯片并且由包括金属膜的包装材料构成的封装。 生物传感器芯片可以基于场效应晶体管中产生的电流的值定量地测量物质，当物质与能够识别物质的分子反应并固定在与场效应晶体管连接的反应场时。 生物传感器芯片包括场效应晶体管和其上安装有场效应晶体管的安装基板。

公开(公告)号：US20110212562A1

公开(公告)日：2011-09-01

申请号：US13028684

申请日：2011-02-16

Applicant: Hiroaki KIKUCHI ,  Tomoaki YAMABAYASHI ,  Osamu TAKAHASHI

Inventor： Hiroaki KIKUCHI ,  Tomoaki YAMABAYASHI ,  Osamu TAKAHASHI

IPC: H01L21/335

CPC classification number: G01N27/4145

Abstract: A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on the other surface of the silicon substrate; forming a source electrode, a drain electrode, and a channel on the first silicon oxide film, the channel connecting the source electrode and the drain electrode; and removing the polysilicon film.

Abstract translation: 制造生物传感器的方法包括：在硅衬底的一个表面上形成第一氧化硅膜和多晶硅膜的叠层体; 在硅衬底的另一个表面上形成第二氧化硅膜; 在所述第一氧化硅膜上形成源电极，漏电极和沟道，所述沟道连接所述源电极和所述漏电极; 并去除多晶硅膜。