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    Single crystal pulling apparatus
    1.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5871581A

    公开(公告)日：1999-02-16

    申请号：US781841

    申请日：1997-01-10

    申请人： Takashi Atami ,  Hiroaki Taguchi ,  Hisashi Furuya ,  Michio Kida

    发明人： Takashi Atami ,  Hiroaki Taguchi ,  Hisashi Furuya ,  Michio Kida

    IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B29/06 ,  C30B29/42 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/12 ,  C30B15/02 ,  Y10T117/10 ,  Y10T117/1052 ,  Y10T117/1056

    摘要： A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.

    摘要翻译： 一种单晶拉制装置，包括：气密性容器，用于将密封容器内的半导体熔体储存在包括在下边缘连接的外坩埚和内坩埚的气密容器内的双坩埚，以及源材料供给装置， 在外坩埚和内坩埚之间的位置处的半导体熔体，其特征在于，在所述外坩埚和所述内坩埚之间的所述半导体熔融区域的内部设置限流构件，以限制所述半导体熔体的流动。

    Single crystal pulling apparatus
    3.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5895527A

    公开(公告)日：1999-04-20

    申请号：US791777

    申请日：1997-01-29

    申请人： Hiroaki Taguchi ,  Takashi Atami ,  Hisashi Furuya ,  Masanori Fukui ,  Michio Kida

    发明人： Hiroaki Taguchi ,  Takashi Atami ,  Hisashi Furuya ,  Masanori Fukui ,  Michio Kida

    IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/12 ,  Y10T117/10

    摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.

    摘要翻译： 本发明涉及一种单晶拉制装置，包括： 位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶 半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B， 内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

    Single crystal pulling method and apparatus for its implementation
    4.
    发明授权
    Single crystal pulling method and apparatus for its implementation 失效
    单晶拉拔方法及其实施方法

    公开(公告)号：US5891245A

    公开(公告)日：1999-04-06

    申请号：US781842

    申请日：1997-01-10

    申请人： Takashi Atami ,  Hiroaki Taguchi ,  Hisashi Furuya ,  Michio Kida

    发明人： Takashi Atami ,  Hiroaki Taguchi ,  Hisashi Furuya ,  Michio Kida

    IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B35/00

    CPC分类号： C30B15/12 ,  C30B15/02 ,  Y10T117/1052 ,  Y10T117/1056

    摘要： A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264

    摘要翻译： 采用单晶拉制法; 气密容器，用于将半导体熔体储存在气密容器内的双坩埚，其包括相互连接的外坩埚和内坩埚，以及从气密容器的上部悬挂的源材料供给管， 颗粒状或粉末状的原料可以从其下端开口加入外坩埚内的半导体熔体，其中源材料与朝向封闭容器流动的惰性气体一起注入源材料供应管中，其特征在于所述 在惰性气体的流量N（1 / min×cm 2）在0.0048P + 0.0264

    Single crystal pulling apparatus
    5.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5858087A

    公开(公告)日：1999-01-12

    申请号：US774184

    申请日：1996-12-26

    申请人： Hiroaki Taguchi ,  Takashi Atami ,  Hisashi Furuya ,  Michio Kida

    发明人： Hiroaki Taguchi ,  Takashi Atami ,  Hisashi Furuya ,  Michio Kida

    IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B35/00

    CPC分类号： C30B15/12 ,  C30B15/02 ,  Y10T117/1052

    摘要： The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11. The entry point of the source material 8 is as far as possible from the inner crucible 12, and close to the outer wall of the outer crucible 11, and hence the added source material 8 is melted rapidly by heat from a heater surrounding the outer crucible 11, and any gas bubbles generated as a result of the introduction of the source material 8, are unlikely infuse into the inner crucible 12.

    摘要翻译： 单晶拉制装置的主要结构涉及一个室（气密室），其内部是用于存储半导体熔体21的双坩埚3，其包括彼此连通的外坩埚11和内坩埚12，源 材料供给管5从室的上部悬挂，并且定位成使得颗粒状原料8可以从其下端开口5a引入到外坩埚11和内坩埚12之间的半导体熔体21中。倾斜部分 在内坩埚12侧的原料供给管5的下端部设置有用于将从下端开口5a排出的原料8引导到外坩埚11的侧壁附近的半导体熔融体21 源材料8的入口点尽可能远离内坩埚12，并且靠近外坩埚11的外壁，因此添加的源配合 rial 8通过来自围绕外坩埚11的加热器的热量迅速熔化，并且由于引入源材料8而产生的任何气泡不太可能注入内坩埚12中。

    Single crystal pulling apparatus
    9.
    发明申请
    Single crystal pulling apparatus 有权
    单晶拉丝机

    公开(公告)号：US20090249998A1

    公开(公告)日：2009-10-08

    申请号：US12385384

    申请日：2009-04-07

    申请人： Shuichi Inami ,  Ken Hamada ,  Hiroaki Taguchi ,  Takuya Yotsui ,  Takashi Atami

    发明人： Shuichi Inami ,  Ken Hamada ,  Hiroaki Taguchi ,  Takuya Yotsui ,  Takashi Atami

    IPC分类号： C30B15/10

    CPC分类号： C30B15/14 ,  C30B15/10 ,  C30B15/20 ,  C30B15/206 ,  C30B35/00 ,  Y10T117/1068

    摘要： A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance.

    摘要翻译： 单晶拉制装置包括：腔室; 设置在所述腔室内用于容纳熔体的坩埚; 设置在室内的水冷装置，以包围从坩埚中的熔体拉出的单晶的方式; 用于从冷却装置供给冷却水并从其排出的水管道; 以及连接到室的支撑臂以支撑水冷装置，其中支撑臂设置在单晶和水管之间。 根据该结构，由于种子颈部的破坏或者由于热应力而导致的单晶破裂的情况下，支撑臂能够防止水分配受到损坏， 例如。

    Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer
    10.
    发明授权
    Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer 有权
    硅单晶，硅单晶锭和硅晶片的制造方法

    公开(公告)号：US08771415B2

    公开(公告)日：2014-07-08

    申请号：US12604627

    申请日：2009-10-23

    申请人： Shigeru Umeno ,  Keiichiro Hiraki ,  Hiroaki Taguchi

    发明人： Shigeru Umeno ,  Keiichiro Hiraki ,  Hiroaki Taguchi

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C01B33/02

    CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/20 ,  C30B33/12

    摘要： By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.

    摘要翻译： 通过在不使用OSF区域的位置或宽度作为指标的情况下确定提升速度的控制方向，反馈并调整随后的上拉速度分布。 通过CZ法生长不含有COP和位错簇的硅单晶锭，从硅单晶锭切片硅晶片，以生长状态对硅晶片进行反应离子蚀刻， 并且包括氧化硅的生长缺陷作为突起暴露在蚀刻表面上。 随后生长中的生长状况基于暴露的突起产生区域被反馈并调整。 因此，可以在不执行热处理以暴露缺陷的情况下执行关于最近批次的反馈。