公开(公告)号：US06234873B1

公开(公告)日：2001-05-22

申请号：US09179934

申请日：1998-10-28

申请人： Hiroaki Yamamoto ,  Akihiro Ishii ,  Kouichi Imura

发明人： Hiroaki Yamamoto ,  Akihiro Ishii ,  Kouichi Imura

IPC分类号： H01L21304

CPC分类号： H01L21/02008 ,  H01L21/02019

摘要： A method for manufacturing semiconductor wafers is provided. According to this invention, wafers are obtained by slicing a single-crystal semiconductor ingot. The sliced wafers are beveled at their peripheral rims. The beveled wafers are flattened by a lapping process. The front and the rear surfaces of the flattened wafers are spin-etched with an acid etchant liquid. The glossiness of the rear surfaces of the spin-etched wafers is controlled to a value of 130-300 %. The front surfaces of the wafers whose rear surfaces have been spin-etched are polished, thereby obtaining mirror-polished surfaces. The front surfaces may also be spin-etched prior to polishing.

摘要翻译： 提供了制造半导体晶片的方法。 根据本发明，通过切割单晶半导体晶锭获得晶片。 切片晶片在其外围边缘处是斜切的。 斜面晶片通过研磨工艺变平。 用酸蚀剂液体旋转刻蚀扁平晶片的前表面和后表面。 旋转蚀刻晶片的后表面的光泽度被控制在130-300％的值。 对后表面进行了旋转刻蚀的晶片的前表面进行研磨，得到镜面研磨面。 在抛光之前，还可以旋转刻蚀前表面。

公开(公告)号：US08045150B2

公开(公告)日：2011-10-25

申请号：US12555170

申请日：2009-09-08

申请人： Kantarou Torii ,  Kouichi Imura

发明人： Kantarou Torii ,  Kouichi Imura

IPC分类号： G01N21/00

CPC分类号： G01N21/9503

摘要： A semiconductor wafer inspection method includes: an imaging step in which a first image being an image of the chamfered surface seen from the main surface side and a second image being an image of the chamfered surface seen from the back surface side are taken; a calculation step in which a first width is obtained based on the first image, the first width being a width of the chamfered surface seen from the main surface side, a second width is obtained based on the second image, the second width being a width of the chamfered surface seen from the back surface side, and a ratio of the first width to the second width thus obtained is calculated; and a shape determination step in which a form of the chamfered surface is determined to be abnormal in a case where the ratio is out of a predetermined range.

摘要翻译： 半导体晶片检查方法包括：拍摄步骤，其中从主表面侧观察倒角表面的图像的第一图像和从后表面侧观察的倒角表面的图像的第二图像; 计算步骤，其中基于第一图像获得第一宽度，第一宽度是从主表面侧看到的倒角表面的宽度，基于第二图像获得第二宽度，第二宽度是宽度 从后表面侧看到的倒角表面，并且计算出如此获得的第一宽度与第二宽度的比率; 以及形状确定步骤，其中在所述比例在预定范围之外的情况下，所述倒角表面的形式被确定为异常。

公开(公告)号：US5849636A

公开(公告)日：1998-12-15

申请号：US767032

申请日：1996-12-12

申请人： Takamitsu Harada ,  Kouichi Imura ,  Hisaya Fukunaga ,  Masahiko Maeda

发明人： Takamitsu Harada ,  Kouichi Imura ,  Hisaya Fukunaga ,  Masahiko Maeda

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01L21/02008 ,  H01L21/02013 ,  H01L21/02019 ,  Y10S438/974

摘要： A method processes a semiconductor wafer by etching the wafer, which has been smoothed by rough lapping, with alkaline solution. A rod is sliced into a plurality of wafers. The peripheral edges of the wafers are chamfered. The processed strain layers over the wafers due to chamfering are smoothed and planarized. The processed strain layers are then removed by etching with alkaline solution. The etched wafers are mirror polished. Lastly, the mirror-polished wafers are cleaned.

摘要翻译： 一种方法通过用碱性溶液蚀刻已经通过粗糙研磨而平滑的晶片来处理半导体晶片。 棒被切成多个晶片。 晶片的外围边缘被倒角。 由于倒角而在晶片上加工的应变层被平滑化并平坦化。 然后通过用碱性溶液蚀刻除去经处理的应变层。 蚀刻后的晶片被镜面抛光。 最后，对镜面抛光的晶片进行清洁。