公开(公告)号：US5707882A

公开(公告)日：1998-01-13

申请号：US376795

申请日：1995-01-23

申请人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

发明人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L21/265

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L27/12 ,  G02F1/13454

摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

摘要翻译： 公开了制造具有特定场效应迁移率的多晶硅膜的方法。 在透明绝缘基板上形成第一多晶硅膜。 硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。 将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。 通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。

公开(公告)号：US06288412B1

公开(公告)日：2001-09-11

申请号：US08974746

申请日：1997-11-19

申请人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

发明人： Hiroki Hamada ,  Kiichi Hirano ,  Nobuhiro Gouda ,  Hisashi Abe ,  Eiji Taguchi ,  Nobuhiko Oda ,  Yoshihiro Morimoto

IPC分类号： H01L2900

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/12 ,  H01L29/66757

摘要： A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

摘要翻译： 公开了制造具有特定场效应迁移率的多晶硅膜的方法。 在透明绝缘基板上形成第一多晶硅膜。 硅膜的表面被氧化，在第一多晶硅膜和氧化物层上形成非晶硅膜。 将非晶硅膜进行固相生长工艺以转变为第二多晶硅膜。 通过控制第一和第二多晶硅膜的相对厚度，可以将第二多晶硅膜的场效应迁移率调整到期望值。

公开(公告)号：US06329269B1

公开(公告)日：2001-12-11

申请号：US08622842

申请日：1996-03-27

申请人： Hiroki Hamada ,  Kiichi Hirano ,  Akifumi Sasaki

发明人： Hiroki Hamada ,  Kiichi Hirano ,  Akifumi Sasaki

IPC分类号： H01L2100

CPC分类号： H01L21/02667 ,  C30B1/023 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02532 ,  H01L21/2022

摘要： A method of fabricating a semiconductor device includes the steps of forming an amorphous semiconductor film on a substrate, oxidizing the surface of the amorphous semiconductor film in an atmosphere containing water vapor and oxygen, and removing the oxide film which is formed on the surface of the semiconductor film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成非晶半导体膜，在含有水蒸气和氧气的气氛中氧化非晶半导体膜的表面，并除去形成在该表面上的氧化物膜 半导体膜。

公开(公告)号：US06281057B1

公开(公告)日：2001-08-28

申请号：US09004779

申请日：1998-01-09

申请人： Yoichiro Aya ,  Tomoyuki Nouda ,  Yasuo Nakahara ,  Naoya Sotani ,  Hisashi Abe ,  Hiroki Hamada

发明人： Yoichiro Aya ,  Tomoyuki Nouda ,  Yasuo Nakahara ,  Naoya Sotani ,  Hisashi Abe ,  Hiroki Hamada

IPC分类号： H01L2184

摘要： A method is obtained of manufacturing a semiconductor device including a semiconductor layer with high field-effect mobility. According to the semiconductor device manufacturing method, a semiconductor layer is formed on a substrate and then the semiconductor layer is irradiated with high energy beam. Then, a heat treatment is provided under a temperature condition capable of reducing the surface roughness of the semiconductor layer. The radiation of high energy beam toward the semiconductor layer improves the crystalinity of the semiconductor layer and the subsequent heat treatment reduces the surface roughness of the semiconductor layer to enhance the field-effect mobility of the semiconductor layer.

公开(公告)号：US08193705B2

公开(公告)日：2012-06-05

申请号：US11554901

申请日：2006-10-31

申请人： Peter Manuela ,  Vincent Joseph Alfred Pugliese ,  Yoshida Isao ,  Hiroki Hamada ,  Abe Hisashi

发明人： Peter Manuela ,  Vincent Joseph Alfred Pugliese ,  Yoshida Isao ,  Hiroki Hamada ,  Abe Hisashi

IPC分类号： H05B33/04

CPC分类号： H05B33/04

摘要： The present invention is an electroluminescent display that incorporates a laminated seal that inhibits exposure of display components to atmospheric contaminants and to a sealing process for fabrication of the same. The sealed electroluminescent display comprises a substrate upon which is constructed a thick dielectric electroluminescent display covered by a laminated seal comprising a lower multi-functional polymer film and an upper inorganic film that provides a barrier layer to inhibit exposure of the electroluminescent display structure to an atmospheric contaminant.

摘要翻译： 本发明是一种电致发光显示器，其包含抑制显示组件暴露于大气污染物的层压密封件及其制造的密封工艺。 密封电致发光显示器包括基底，其上构成了由层叠密封件覆盖的厚电介质电致发光显示器，该层叠密封件包括下部多功能聚合物膜和上部无机膜，其提供阻挡层以抑制电致发光显示结构暴露于大气 污染物。

公开(公告)号：US07812522B2

公开(公告)日：2010-10-12

申请号：US11184457

申请日：2005-07-19

申请人： Yongbao Xin ,  Isao Yoshida ,  Joe Acchione ,  Hiroki Hamada

发明人： Yongbao Xin ,  Isao Yoshida ,  Joe Acchione ,  Hiroki Hamada

IPC分类号： H01J1/62

CPC分类号： C09K11/7734 ,  C09K11/7718 ,  C09K11/7731 ,  C09K11/7786 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22

摘要： A novel laminate is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and an aluminum oxide or aluminum oxynitride layer provided directly adjacent and in contact with the bottom of the phosphor thin film layer. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.

摘要翻译： 提供了一种新颖的层压材料，以改善在ac厚膜电介质电致发光显示器中使用的硫铝酸盐基磷光体的操作稳定性。 该新型结构包括稀土活化的碱土金属硫铝酸盐荧光体薄膜层和直接邻近并与荧光体薄膜层的底部接触的氧化铝或氮氧化铝层。 本发明特别适用于采用在高处理温度下形成和激活荧光膜的厚电介质层的电致发光显示器中使用的荧光体。

公开(公告)号：US06917345B2

公开(公告)日：2005-07-12

申请号：US10034847

申请日：2001-12-21

申请人： Hiroki Hamada ,  Yoshikazu Kamei ,  Masayuki Ishiwa ,  Isao Tomomatsu ,  Takahiro Ueno ,  Shinji Satoh

发明人： Hiroki Hamada ,  Yoshikazu Kamei ,  Masayuki Ishiwa ,  Isao Tomomatsu ,  Takahiro Ueno ,  Shinji Satoh

IPC分类号： H01Q13/08 ,  B29C45/16 ,  H01Q1/24 ,  H01Q1/38

CPC分类号： B29C45/1671 ,  H01Q1/243 ,  H01Q1/38

摘要： A small antenna comprises an antenna conductor, and a dielectric chip formed at surroundings of the antenna conductor by a plurality of resin moldings.

摘要翻译： 小型天线包括天线导体和通过多个树脂模制件形成在天线导体的周围的电介质芯片。

公开(公告)号：US06894646B2

公开(公告)日：2005-05-17

申请号：US10150138

申请日：2002-05-15

申请人： Takanori Washiro ,  Isao Tomomatsu ,  Hiroki Hamada ,  Shinji Satoh

发明人： Takanori Washiro ,  Isao Tomomatsu ,  Hiroki Hamada ,  Shinji Satoh

IPC分类号： H01Q11/16 ,  H01Q1/38

CPC分类号： H01Q1/38 ,  Y10T29/49016

摘要： A line-shaped comprises an antenna element in which a strip-shaped conductor is bent in a width direction of a strip, and a chamfered portion is provided on an outer edge of a bent portion of the strip-shaped conductor.

摘要翻译： 线状包括天线元件，其中带状导体沿条带的宽度方向弯曲，并且倒角部分设置在条形导体的弯曲部分的外边缘上。

公开(公告)号：US06724347B2

公开(公告)日：2004-04-20

申请号：US10178328

申请日：2002-06-20

申请人： Isao Tomomatsu ,  Takahiro Ueno ,  Mitsuo Yoshino ,  Shinji Satoh ,  Hiroki Hamada

发明人： Isao Tomomatsu ,  Takahiro Ueno ,  Mitsuo Yoshino ,  Shinji Satoh ,  Hiroki Hamada

IPC分类号： H01Q138

CPC分类号： H01Q1/2283 ,  B29C45/0025 ,  B29C45/14639 ,  B29L2031/3456 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q1/40 ,  H01Q9/40 ,  H01Q9/42 ,  H01Q11/04

摘要： Of margins of a resin molding with an antenna element buried therein which lie around the antenna element, a margin on that side of the resin molding where a gate mark remains is made larger than margins on other sides where there is no gate mark. Particularly, when the antenna element has a line antenna portion and a capacitance-adding portion provided at a distal end of the line antenna portion, the resin molding is injection-molded in such a way that a gate mark can be formed on that side where the capacitance-adding portion is located. Those portions of the resin molding where the terminal portions are led out are dented from levels of portions around those portions. This provides a chip antenna which has a simple structure with a high mechanical strength and does not prevent separation or cracking from occurring in the resin molding in which the antenna element is buried and a method of manufacturing the chip antenna.

摘要翻译： 在埋设在天线元件周围的天线元件的树脂模制品的边缘处，留下栅极标记的树脂模制品侧的边缘大于没有栅极标记的另一侧的边缘。 特别地，当天线元件具有线天线部分和设置在线天线部分的远端处的电容增加部分时，树脂模制件以这样的方式被注射成型，即可以在那一侧形成栅极标记 电容添加部分被定位。 端子部分被引出的树脂模塑件的那些部分由这些部分周围的部分的凹陷凹陷。 这提供了具有机械强度高的简单结构的芯片天线，并且不防止在埋设天线元件的树脂模制件中发生分离或破裂以及制造芯片天线的方法。

公开(公告)号：US06642907B2

公开(公告)日：2003-11-04

申请号：US10044069

申请日：2002-01-09

申请人： Hiroki Hamada ,  Masayuki Ishiwa

发明人： Hiroki Hamada ,  Masayuki Ishiwa

IPC分类号： H01Q138

CPC分类号： H01Q9/0421 ,  H01Q1/243 ,  H01Q1/40 ,  H01Q9/0407

摘要： An antenna device includes a dielectric chip fitted to an aperture formed in an exterior casing of a terminal unit and having an outer surface thereof cooperating with an outer surface to form part of an outer surface of the terminal unit, and an antenna conductor embedded into the dielectric chip and disposed at a vertical position sufficiently far from a grounding conductor of a printed circuit board in the exterior casing.